Motorola 2N6439 Datasheet
1
2N6439MOTOROLA RF DEVICE DATA
The RF Line
. . . designed primarily for wideband large–signal output amplifier stages in the
225 to 400 MHz frequency range.
• Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc
Output Power = 60 Watts over 225 to 400 MHz Band
Minimum Gain = 7.8 dB @ 400 MHz
• Built–In Matching Network for Broadband Operation Using Double
Match Technique
• 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
• Gold Metallization System for High Reliability Applications
MAXIMUM RATINGS*
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
33 Vdc
Collector–Base Voltage V
CBO
60 Vdc
Emitter–Base Voltage V
EBO
4.0 Vdc
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
P
D
146
0.83
Watts
W/°C
Storage Temperature Range T
stg
–65 to +200 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R
θJC
1.2 °C/W
ELECTRICAL CHARACTERISTICS* (T
C
= 25°C unless otherwise noted.)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, IB = 0)
V
(BR)CEO
33 — — Vdc
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, VBE = 0)
V
(BR)CES
60 — — Vdc
Emitter–Base Breakdown Voltage
(IE = 5.0 mAdc, IC = 0)
V
(BR)EBO
4.0 — — Vdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
I
CBO
— — 2.0 mAdc
NOTE: (continued)
1. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF
amplifiers.
*Indicates JEDEC Registered Data.
Order this document
by 2N6439/D
SEMICONDUCTOR TECHNICAL DATA
60 W, 225 to 400 MHz
CONTROLLED “Q”
BROADBAND RF POWER
TRANSISTOR
NPN SILICON
CASE 316–01, STYLE 1
Motorola, Inc. 1994
2N6439
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS* — continued (T
C
= 25°C unless otherwise noted.)
Characteristic UnitMaxTypMinSymbol
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 Adc, VCE = 5.0 Vdc)
h
FE
10 — 100 —
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 28 Vdc, IE = 0, f = 1.0 MHz)
C
ob
— 67 75 pF
BROADBAND FUNCTIONAL TESTS (Figure 6)
Common–Emitter Amplifier Power Gain
(VCC = 28 Vdc, P
out
= 60 W, f = 225–400 MHz)
G
PE
7.8 8.5 — dB
Electrical Ruggedness
(P
out
= 60 W, VCC = 28 Vdc, f = 400 MHz, VSWR 30:1
all phase angles)
ψ
No Degradation in Output Power
—
NARROW BAND FUNCTIONAL TESTS (Figure 1)
Common–Emitter Amplifier Power Gain
(VCC = 28 Vdc, P
out
= 60 W, f = 400 MHz)
G
PE
7.8 10 — dB
Collector Efficiency
(VCC = 28 Vdc, P
out
= 60 W, f = 400 MHz)
η 55 — — %
*Indicates JEDEC Registered Data.
Figure 1. 400 MHz Test Amplifier (Narrow Band)
C1
C4, C11 — 4.0–40 pF
C5
C8 — 33 pF
C9 — 1000 pF
C10 — 5.0 µF
R1 — 15 Ω
L1, L2 — 3/16″ x 1″ Copper Strap
L3 — 1.5 µH
L4 — 10 µH
L5 — 1 Turn #16 AWG, 5/16″ I.D.
C8
C7 C3
C9 C10
C4
L2
C5
DUT
C11 C2
L3
L1
R1 L4
C6
L5
VCC = 28 V
C1
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