1
Motorola Bipolar Power Transistor Device Data
. . . designed for general–purpose amplifier and low–speed switching applications.
• High DC Current Gain —
hFE = 2500 (Typ) @ IC = 4.0 Adc
• Collector–Emitter Sustaining Voltage – @ 100 mAdc
V
CEO(sus)
= 60 Vdc (Min) — 2N6387
V
CEO(sus)
= 80 Vdc (Min) — 2N6388
• Low Collector–Emitter Saturation Voltage —
V
CE(sat)
= 2.0 Vdc (Max) @ IC = 5.0 Adc — 2N6387, 2N6388
• Monolithic Construction with Built–In Base–Emitter Shunt Resistors
• TO–220AB Compact Package
*MAXIMUM RATINGS
Rating
Symbol
2N6387
2N6388
Unit
Collector–Emitter Voltage
V
CEO
60
80
Vdc
Collector–Base Voltage
V
CB
60
80
Vdc
Emitter–Base Voltage
V
EB
5.0
Vdc
Collector Current — Continuous
Peak
I
C
10
15
10
15
Adc
Base Current
I
B
250
mAdc
Total Power Dissipation
@ TC = 25_C
Derate above 25_C
P
D
65
0.52
Watts
W/_C
Total Power Dissipation
@ TA = 25_C
Derate above 25_C
P
D
2.0
0.016
Watts
W/_C
Operating and Storage Junction,
Temperature Range
TJ, T
stg
–65 to +150
_
C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
1.92
_
C/W
Thermal Resistance, Junction to Ambient
R
θJA
62.5
_
C/W
80
40
20
0
20 40 80 100 120 160
Figure 1. Power Derating
T, TEMPERATURE (°C)
P
D
, POWER DISSIPATION (WATTS)
60
TAT
C
4.0
2.0
1.0
3.0
0 60 140
T
A
T
C
Preferred devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N6387/D
Motorola, Inc. 1995
*Motorola Preferred Device
DARLINGTON
8 AND 10 AMPERE
NPN SILICON
POWER TRANSISTORS
60–80 VOLTS
65 WATTS
CASE 221A–06
TO–220AB
REV 7
查询2N6387供应商
2
Motorola Bipolar Power Transistor Device Data
*ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 200 mAdc, IB = 0) 2N6387
2N6388
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
V
CEO(sus)
60
80
—
—
Vdc
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0) 2N6387
(VCE = 80 Vdc, IB = 0) 2N6388
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
I
CEO
—
—
1.0
1.0
mAdc
Collector Cutoff Current
(VCE = 60 Vdc, V
EB(off)
= 1.5 Vdc) 2N6387
(VCE – 80 Vdc, V
EB(off)
= 1.5 Vdc) 2N6388
(VCE = 60 Vdc, V
EB(off)
= 1.5 Vdc, TC = 125_C) 2N6387
(VCE = 80 Vdc, V
EB(off)
= 1.5 Vdc, TC = 125_C) 2N6388
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
I
CEX
—
—
—
—
300
300
3.0
3.0
µAdc
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
I
EBO
—
5.0
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 5.0 Adc, VCE = 3.0 Vdc) 2N6387, 2N6388
(IC = 1 0 Adc, VCE = 3.0 Vdc) 2N6387, 2N6388
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
h
FE
1000
100
20,000
—
—
Collector–Emitter Saturation Voltage
(IC = 5.0 Adc, IB = 0.01 Adc) 2N6387, 2N6388
(IC = 10 Adc, IB = 0.1 Adc) 2N6387, 2N6388
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
V
CE(sat)
—
—
2.0
3.0
Vdc
Base–Emitter On Voltage
(IC = 5.0 Adc, VCE = 3.0 Vdc) 2N6387, 2N6388
(IC = 10 Adc, VCE = 3.0 Vdc) 2N6387, 2N6388
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
V
BE(on)
—
—
2.8
4.5
Vdc
DYNAMIC CHARACTERISTICS
Small–Signal Current Gain
(IC = 1.0 Adc, VCE = 5.0 Vdc, f
test
= 1.0 MHz)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
|hfe|
20
—
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
C
ob
—
200
pF
Small–Signal Current Gain
(IC = 1.0 Adc, VCE = 5.0 Vdc, f = 1.0 kHz)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
h
fe
1000
—
—
*Indicates JEDEC Registered Data
(1) Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%.
Figure 2. Switching Times Test Circuit
7.0
0.1
Figure 3. Switching Times
IC, COLLECTOR CURRENT (AMPS)
t, TIME ( s)
µ
5.0
0.7
0.3
0.2
0.2 10
VCC = 30 V
IC/IB = 250
IB1 = I
B2
TJ = 25
°
C
t
f
0.07
1.0 5.0
t
s
t
r
0.1
1.0
3.0
0.5 2.0
0
V
CC
+ 30 V
SCOPE
TUT
– 4.0 V
tr, tf
v
10 ns
DUTY CYCLE = 1.0%
R
C
D1 MUST BE FAST RECOVERY TYPES, e.g.,
1N5825 USED ABOVE IB
[
100 mA
MSD6100 USED BELOW IB
[
100 mA
25 µs
D
1
51
RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
V
1
APPROX
+ 12 V
V
2
APPROX
– 8 V
[
8.0 k[ 120
FOR td AND tr, D1 IS DISCONNECTED
AND V2 = 0
R
B
t
d
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