Motorola 2N5555, 2N5657 Datasheet

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SEMICONDUCTOR TECHNICAL DATA

 

N–Channel — Depletion

3

GATE

MAXIMUM RATINGS

Rating Symbol Value Unit

Drain–Source Voltage V
Drain–Gate Voltage V
Gate–Source Voltage V
Forward Gate Current I
Total Device Dissipation @ TC = 25°C

Derate above 25°C
Junction Temperature Range T
Storage Temperature Range T

ELECTRICAL CHARACTERISTICS (T

Characteristic

DS
DG
GS

GF

P

D

J

stg

= 25°C unless otherwise noted)

A

OFF CHARACTERISTICS

Gate–Source Breakdown Voltage (IG = 10 µAdc, VDS = 0) V
Gate Reverse Current (VGS = 15 Vdc, VDS = 0) I
Drain Cutoff Current (VDS = 12 Vdc, VGS = –10 V)

Drain Cutoff Current (VDS = 12 Vdc, VGS = –10 V , TA = 100°C)

ON CHARACTERISTICS

Zero–Gate–Voltage Drain Current

(VDS = 15 Vdc, VGS = 0)
Gate–Source Forward Voltage

(I

= 1.0 mAdc, VDS = 0)

G(f)

Drain–Source On–Voltage

(ID = 7.0 mAdc, VGS = 0)
Static Drain–Source On Resistance

(ID = 0.1 mAdc, VGS = 0)

(1)

SMALL–SIGNAL CHARACTERISTICS

Small–Signal Drain–Source “ON” Resistance

(VGS = 0, ID = 0, f = 1.0 kHz)
Input Capacitance

(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance

(VDS = 0, VGS = 10 Vdc, f = 1.0 MHz)

SWITCHING CHARACTERISTICS

Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time

1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 3.0%.

(VDD = 10 Vdc, I
V

(VDD = 10 Vdc, I
V

GS(on)

GS(on)

= 0, V

= 0, V

= 7.0 mAdc,

D(on)

= –10 Vdc) (See Figure 1)

GS(off)

= 7.0 mAdc,

D(on)

= –10 Vdc) (See Figure 1)

GS(off)

25 Vdc
25 Vdc
25 Vdc
10 mAdc

350

2.8
–65 to +150 °C
–65 to +150 °C

1 DRAIN

2 SOURCE

mW

mW/°C

Order this document

by 2N5555/D



1

2

3

CASE 29–04, STYLE 5

TO–92 (TO–226AA)

Symbol Min Max Unit

(BR)GSS

GSS

I

D(off)

I

DSS

V

GS(f)

V

DS(on)

r

DS(on)

r

ds(on)

C

iss

C

rss

t

d(on)

t

r

t

d(off)

t

f

25 — Vdc
— 1.0 nAdc
—

—

15 — mAdc

— 1.0 Vdc

— 1.5 Vdc

— 150 Ohms

— 150 Ohms

— 5.0 pF

— 1.2 pF

— 5.0 ns
— 5.0 ns
— 15 ns
— 10 ns

10

2.0

nAdc
µAdc

Motorola Small–Signal Transistors, FETs and Diodes Device Data

 Motorola, Inc. 1997

1

2N5555

PULSE

GENERATOR

(50 OHMS)

INPUT PULSE

RISE TIME < 1.0 ns
FALL TIME < 1.0 ns
NOMINAL VALUE OF “ON” PULSE WIDTH = 400 ns
DUTY CYCLE
GENERATOR SOURCE IMPEDANCE = 50 OHMS

50 OHM COAXIAL CABLE

1.0 k 50

≤

1.0%

V

1.0 k

DD

10 k

50 OHM

COAXIAL

CABLE

TEKTRONIX

567

SAMPLING

SCOPE

Rin =
50 OHMS

Figure 1. Switching Times Test Circuit

POWER GAIN

24

INPUT

OUTPUT

10%

50%

PULSE WIDTH

90% 90%

INPUT PULSE
RISE TIME

t

d(on)

10%

90%

t

r

t

d(off)

90%

50%

10%

INPUT PULSE
FALL TIME

10%

t

f

V

GS(on)

V

GS(off)

20

f = 100 MHz

16

12

, POWER GAIN (dB)

G

P

8.0

4.0

2.0

0 4.0 6.0 8.0 10 12 14

Figure 2. Effects of Drain Current

NEUTRALIZING

COIL
INPUT
TO 50

SOURCE

*L1 17 turns, (approx. — depends upon circuit layout) AWG #28

enameled copper wire, close wound on 9/32″ ceramic coil
form. Tuning provided by a powdered iron slug.

*L2 4–1/2 turns, AWG #18 enameled copper wire, 5/16″ long,

3/8″ I.D. (AIR CORE).

*L3 3–1/2 turns, AWG #18 enameled copper wire, 1/4″ long,

3/8″ I.D. (AIR CORE).

C1

Ω

Adjust VGS for
ID = 50 mA
VGS < 0 Volts

′

g

L1

C5

L3R

C6

C2

CASE

V

NOTE: The noise source is a hot–cold body

COMMON

GS

V

+15 V

(AIL type 70 or equivalent) with a
test receiver (AIL type 136 or equivalent).

Figure 3. 100 MHz and 400 MHz Neutralized Test Circuit

400 MHz

ID, DRAIN CURRENT (mA)

C3

C4

L2

C7

DS

ID = 5.0 mA

T

= 25°C

channel

VDS = 15 Vdc
VGS = 0 V

Reference

Designation

C1

TO 500

Ω

LOAD

**L1 6 turns, (approx. — depends upon circuit layout) AWG #24

enameled copper wire, close wound on 7/32″ ceramic coil
form. Tuning provided by an aluminum slug.

**L2 1 turn, AWG #16 enameled copper wire, 3/8″ I.D.

(AIR CORE).

**L3 1/2 turn, AWG #16 enameled copper wire, 1/4″ I.D.

(AIR CORE).

C2 1000 pF 17 pF
C3 3.0 pF 1.0 pF
C4 1–12 pF 0.8–8.0 pF
C5 1–12 pF 0.8–8.0 pF
C6 0.0015 µF 0.001 µF
C7 0.0015 µF 0.001 µF
L1 3.0 µH* 0.2 µH**
L2 0.15 µH* 0.03 µH**
L3 0.14 µH* 0.022 µH**

VALUE

100 MHz 400 MHz

7.0 pF 1.8 pF

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

10

8.0

NOISE FIGURE

(T

ID = 5.0 mA

channel

= 25°C)

6.5

5.5

2N5555

VDS = 15 V
VGS = 0 V

6.0

4.0

NF, NOISE FIGURE (dB)

2.0
100 MHz

0

0 4.0 6.0 8.0 10 12 14

2.0

f = 400 MHz

VDS, DRAIN–SOURCE VOLTAGE (VOLTS)

Figure 4. Effects of Drain–Source Voltage Figure 5. Effects of Drain Current

4.5

3.5

NF, NOISE FIGURE (dB)

16 18 20

2.5

1.5
0 4.0 6.0 8.0 10 12 14

100 MHz

2.0

INTERMODULA TION CHARACTERISTICS

+40
+20

0
–20
–40
–60
–80

–100
–120

out

P , OUTPUT POWER PER TONE (dB)

–140
–160

–120 –100 –80 –60 –40 –20 0 +20

VDS = 15 Vdc
f1 = 399 MHz
f2 = 400 MHz

FUNDAMENT AL
OUTPUT @ I

0.25 I

DSS

DSS

Pin, INPUT POWER PER TONE (dB)

3RD ORDER INTERCEPT

,

3RD ORDER IMD
OUTPUT @ I

0.25 I

DSS

f = 400 MHz

ID, DRAIN CURRENT (mA)

,

DSS

Figure 6. Third Order Intermodulation Distortion

Motorola Small–Signal Transistors, FETs and Diodes Device Data

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