Datasheet 2N5087RLRA, 2N5087 Datasheet (ON Semiconductor)

1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

 

PNP Silicon

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V

CEO

50 Vdc

Collector–Base Voltage V

CBO

50 Vdc

Emitter–Base Voltage V

EBO

3.0 Vdc

Collector Current — Continuous I

C

50 mAdc

Total Device Dissipation @ TA = 25°C

Derate above 25°C

P

D

625

5.0

mW

mW/°C

Total Device Dissipation @ TC = 25°C

Derate above 25°C

P

D

1.5
12

Watts

mW/°C

Operating and Storage Junction

T emperature Range

TJ, T

stg

–55 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Ambient R

q

JA

200 °C/W

Thermal Resistance, Junction to Case R

q

JC

83.3 °C/W

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic

Symbol Min Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(1)

(IC = 1.0 mAdc, IB = 0)

V

(BR)CEO

50 — Vdc

Collector–Base Breakdown Voltage

(IC = 100 µAdc, IE = 0)

V

(BR)CBO

50 — Vdc

Collector Cutoff Current

(VCB = 35 Vdc, IE = 0)

I

CBO

— 50 nAdc

Emitter Cutoff Current

(VEB = 3.0 Vdc, IC = 0)

I

EBO

— 50 nAdc

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

Order this document

by 2N5087/D

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SEMICONDUCTOR TECHNICAL DATA



Motorola Preferred Device

CASE 29–04, STYLE 1

TO–92 (TO–226AA)

1

2

3

 Motorola, Inc. 1997

COLLECTOR

3

2

BASE

1

EMITTER

(Replaces 2N5086/D)

2N5087

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted) (Continued)

Characteristic Symbol Min Max Unit

ON CHARACTERISTICS

DC Current Gain

(IC = 100 µAdc, VCE = 5.0 Vdc)
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)

(1)

h

FE

250
250
250

800

—
—

—

Collector–Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

V

CE(sat)

— 0.3 Vdc

Base–Emitter On Voltage

(IC = 1.0 mAdc, VCE = 5.0 Vdc)

V

BE(on)

— 0.85 Vdc

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

(IC = 500 µAdc, VCE = 5.0 Vdc, f = 20 MHz)

f

T

40 — MHz

Collector–Base Capacitance

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)

C

cb

— 4.0 pF

Small–Signal Current Gain

(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)

h

fe

250 900

—

Noise Figure

(IC = 20 µAdc, VCE = 5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz)
(IC = 100 µAdc, VCE = 5.0 Vdc, RS = 3.0 kΩ, f = 1.0 kHz)

NF

—
—

2.0

2.0

dB

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

2N5087

3

Motorola Small–Signal Transistors, FETs and Diodes Device Data

TYPICAL NOISE CHARACTERISTICS

(VCE = –ā5.0 Vdc, TA = 25°C)

Figure 1. Noise Voltage

f, FREQUENCY (Hz)

5.0

7.0

10

3.0

Figure 2. Noise Current

f, FREQUENCY (Hz)

1.0
10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k

1.0

7.0

5.0

3.0

2.0

1.0

0.7

0.5

0.3

0.1

BANDWIDTH = 1.0 Hz

RS

≈

0

IC = 10 µA

100 µA

e

n

, NOISE VOLTAGE (nV)

I

n

, NOISE CURRENT (pA)

30 µA

BANDWIDTH = 1.0 Hz

RS

≈∞

IC = 1.0 mA

300 µA

100 µA

30 µA

10 µA

10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k

2.0

1.0 mA

0.2

300 µA

NOISE FIGURE CONTOURS

(VCE = –ā5.0 Vdc, TA = 25°C)

500 k

100

200

500

1.0 k

10 k

5.0 k

20 k

50 k

100 k

200 k

2.0 k

1.0 M

500 k

100

200

500

1.0 k

10 k

5.0 k

20 k

50 k

100 k

200 k

2.0 k

1.0 M

Figure 3. Narrow Band, 100 Hz

IC, COLLECTOR CURRENT (µA)

Figure 4. Narrow Band, 1.0 kHz

IC, COLLECTOR CURRENT (µA)

10

0.5 dB

BANDWIDTH = 1.0 Hz

R

S

, SOURCE RESISTANCE (OHMS)

R

S

, SOURCE RESISTANCE (OHMS)

Figure 5. Wideband

IC, COLLECTOR CURRENT (µA)

10

10 Hz to 15.7 kHz

R

S

, SOURCE RESISTANCE (OHMS)

Noise Figure is Defined as:

NF+20 log

10

ƪ

e

n

2

)

4KTRS)

I

n

2

R

S

2

4KTR

S

ƫ

1ń2

= Noise Voltage of the Transistor referred to the input. (Figure 3)
= Noise Current of the Transistor referred to the input. (Figure 4)
= Boltzman’s Constant (1.38 x 10

–23

j/°K)
= Temperature of the Source Resistance (°K)
= Source Resistance (Ohms)

e

n

I

n

K
T
R

S

1.0 dB

2.0 dB

3.0 dB

20 30 50 70 100 200 300 500 700 1.0 k 10 20 30 50 70 100 200 300 500 700 1.0 k

500 k

100

200

500

1.0 k

10 k

5.0 k

20 k

50 k

100 k

200 k

2.0 k

1.0 M

20 30 50 70 100 200 300 500 700 1.0 k

BANDWIDTH = 1.0 Hz

5.0 dB

0.5 dB

1.0 dB

2.0 dB

3.0 dB

5.0 dB

0.5 dB

1.0 dB

2.0 dB

3.0 dB

5.0 dB

2N5087

4

Motorola Small–Signal Transistors, FETs and Diodes Device Data

TYPICAL STATIC CHARACTERISTICS

Figure 6. DC Current Gain

IC, COLLECTOR CURRENT (mA)

400

0.003

h , DC CURRENT GAIN

FE

TJ = 125°C

–55°C

25°C

VCE = 1.0 V
VCE = 10 V

Figure 7. Collector Saturation Region

IC, COLLECTOR CURRENT (mA)

1.4

Figure 8. Collector Characteristics

IC, COLLECTOR CURRENT (mA)

V, VOLTAGE (VOLTS)

1.0 2.0 5.0 10 20

50

1.6

100

TJ = 25°C

V

BE(sat)

@ IC/IB = 10

V

CE(sat)

@ IC/IB = 10

V

BE(on)

@ VCE = 1.0 V

*

qVC for V

CE(sat)

qVB for V

BE

0.1 0.2 0.5

Figure 9. “On” Voltages

IB, BASE CURRENT (mA)

0.4

0.6

0.8

1.0

0.2

0

V

CE

, COLLECTOR–EMITTER VOL TAGE (VOLTS)

0.002

TA = 25°C

IC = 1.0 mA 10 mA 100 mA

Figure 10. Temperature Coefficients

50 mA

VCE, COLLECTOR–EMITTER VOL TAGE (VOLTS)

40

60

80

100

20

0

0

I

C

, COLLECTOR CURRENT (mA)

TA = 25°C

PULSE WIDTH = 300

µ

s

DUTY CYCLE

≤

2.0%

IB = 400 µA

350 µA

300 µA

250 µA

200 µA

*APPLIES for IC/IB ≤ hFE/2

25°C to 125°C

–55°C to 25°C

25°C to 125°C

–55°C to 25°C

40

60

0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0

2.0

3.0

5.0 7.0 10 20 30 50 70 100

0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 5.0 10 15 20 25 30 35 40

1.2

1.0

0.8

0.6

0.4

0.2
0

2.4

0.8

0

1.6

0.8

1.0 2.0 5.0 10 20

50

100

0.1 0.2 0.5

200

100

80

V

, TEMPERATURE COEFFICIENTS (mV/ C)

°θ

150 µA

100 µA

50 µA

2N5087

5

Motorola Small–Signal Transistors, FETs and Diodes Device Data

TYPICAL DYNAMIC CHARACTERISTICS

C, CAPACITANCE (pF)

Figure 11. Turn–On Time

IC, COLLECTOR CURRENT (mA)

500

Figure 12. Turn–Off Time

IC, COLLECTOR CURRENT (mA)

2.0 5.0 10

20 30 50

1000

Figure 13. Current–Gain — Bandwidth Product

IC, COLLECTOR CURRENT (mA)

Figure 14. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

Figure 15. Input Impedance

IC, COLLECTOR CURRENT (mA)

Figure 16. Output Admittance

IC, COLLECTOR CURRENT (mA)

3.01.0

500

0.5

10

t, TIME (ns)

t, TIME (ns)

f , CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)

T

h , OUTPUT ADMITTANCE ( mhos)

oe

m

h

ie

, INPUT IMPEDANCE (k )

Ω

5.0

7.0

10

20

30

50

70

100

300

7.0

70 100

VCC = 3.0 V
IC/IB = 10
TJ = 25

°

C

td @ V

BE(off)

= 0.5 V

t

r

10

20

30

50

70

100

200

300

500

700

–

ā

2.0–1.0

VCC = –ā3.0 V
IC/IB = 10
IB1 = I

B2

TJ = 25

°

C

t

s

t

f

50

70

100

200

300

0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50

TJ = 25°C

VCE = 20 V

5.0 V

1.0

2.0

3.0

5.0

7.0

0.1 0.2 0.5 1.0 2.0 5.0 10 20 500.05

C

ib

C

ob

2.0 5.0 10

20 50

1.0

0.2
100

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

10

20

0.1 0.2 0.5

VCE = –10 Vdc
f = 1.0 kHz
TA = 25

°

C

2.0 5.0 10

20 50

1.0

2.0
100

3.0

5.0

7.0

10

20

30

50

70

100

200

0.1 0.2 0.5

VCE = 10 Vdc
f = 1.0 kHz
TA = 25

°

C

200

–ā3.0

–

ā

5.0 –ā7.0

–

ā

20–10 –ā30

–

ā

50 –ā70

–100

TJ = 25°C

2N5087

6

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Figure 17. Thermal Response

t, TIME (ms)

1.0

0.01

r(t) TRANSIENT THERMAL RESIST ANCE

(NORMALIZED)

0.01

0.02

0.03

0.05

0.07

0.1

0.2

0.3

0.5

0.7

0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k

50 k

100 k

D = 0.5

0.2

0.1

0.05

0.02

0.01
SINGLE PULSE

DUTY CYCLE, D = t1/t

2

D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN–569)
Z

θ

JA(t)

= r(t) •R

θ

JA

T

J(pk)

– TA = P

(pk)

Z

θ

JA(t)

t

1

t

2

P

(pk)

FIGURE 19

Figure 18. Active–Region Safe Operating Area

TJ, JUNCTION TEMPERATURE (°C)

10

4

–40

I

C

, COLLECTOR CURRENT (nA)

Figure 19. Typical Collector Leakage Current

VCE, COLLECTOR–EMITTER VOL TAGE (VOLTS)

400

2.0

I

C

, COLLECTOR CURRENT (mA)

DESIGN NOTE: USE OF THERMAL RESPONSE DATA

A train of periodical power pulses can be represented by the model
as shown in Figure 19. Using the model and the device thermal
response the normalized effective transient thermal resistance of
Figure 17 was calculated for various duty cycles.

To find Z

θJA(t)

, multiply the value obtained from Figure 17 by the

steady state value R

θJA

.

Example:
The 2N5087 is dissipating 2.0 watts peak under the following
conditions:

t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2)
Using Figure 17 at a pulse width of 1.0 ms and D = 0.2, the reading of
r(t) is 0.22.

The peak rise in junction temperature is therefore

∆T = r(t) x P

(pk)

x R

θJA

= 0.22 x 2.0 x 200 = 88°C.

For more information, see AN–569.

The safe operating area curves indicate IC–VCE limits of the
transistor that must be observed for reliable operation. Collector load
lines for specific circuits must fall below the limits indicated by the
applicable curve.

The data of Figure 18 is based upon T

J(pk)

= 150°C; TC or TA is
variable depending upon conditions. Pulse curves are valid for duty
cycles to 10% provided T

J(pk)

≤ 150°C. T

J(pk)

may be calculated from
the data in Figure 17. At high case or ambient temperatures, thermal
limitations will reduce the power than can be handled to values less
than the limitations imposed by second breakdown.

10

–2

10

–1

10

0

10

1

10

2

10

3

–20 0 + 20 +40 +60 +80 + 100 + 120 +140 + 160

VCC = 30 V

I

CEO

I

CBO

AND

I

CEX

@ V

BE(off)

= 3.0 V

TA = 25°C

CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT

1.0 ms

10 µs

TC = 25°C

1.0 s

dc

dc

4.0

6.0

10

20

40

60

100

200

4.0 6.0 8.0 10 20

40

TJ = 150°C

100 µs

2N5087

7

Motorola Small–Signal Transistors, FETs and Diodes Device Data

P ACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.

4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.

R

A

P

J

L

F

B

K

G

H

SECTION X–X

C

V

D

N

N

XX

SEATING
PLANE

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.022 0.41 0.55
F 0.016 0.019 0.41 0.48
G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
K 0.500 ––– 12.70 –––
L 0.250 ––– 6.35 –––
N 0.080 0.105 2.04 2.66
P ––– 0.100 ––– 2.54
R 0.115 ––– 2.93 –––
V 0.135 ––– 3.43 –––

1

STYLE 1:

PIN 1. EMITTER

2. BASE

3. COLLECTOR

CASE 029–04

(TO–226AA)

ISSUE AD

2N5087

8

Motorola Small–Signal Transistors, FETs and Diodes Device Data

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters which may be provided in Motorola
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2N5087/D

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