Motorola 2N5087 Datasheet
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N5087/D
PNP Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
T emperature Range
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
Thermal Resistance, Junction to Case R
ELECTRICAL CHARACTERISTICS (T
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
Collector–Base Breakdown Voltage
(IC = 100 µAdc, IE = 0)
Collector Cutoff Current
(VCB = 35 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
= 25°C unless otherwise noted)
A
Characteristic
(1)
CEO
CBO
EBO
P
P
TJ, T
q
q
C
D
D
JA
JC
stg
COLLECTOR
3
2
BASE
1
EMITTER
50 Vdc
50 Vdc
3.0 Vdc
50 mAdc
625
5.0
1.5
12
–55 to +150 °C
200 °C/W
83.3 °C/W
mW
mW/°C
Watts
mW/°C
Motorola Preferred Device
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Symbol Min Max Unit
V
(BR)CEO
V
(BR)CBO
I
CBO
I
EBO
50 — Vdc
50 — Vdc
— 50 nAdc
— 50 nAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
(Replaces 2N5086/D)
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1997
1
2N5087
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 100 µAdc, VCE = 5.0 Vdc)
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)
Collector–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
Base–Emitter On Voltage
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(1)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 500 µAdc, VCE = 5.0 Vdc, f = 20 MHz)
Collector–Base Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Small–Signal Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
Noise Figure
(IC = 20 µAdc, VCE = 5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz)
(IC = 100 µAdc, VCE = 5.0 Vdc, RS = 3.0 kΩ, f = 1.0 kHz)
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
h
FE
V
CE(sat)
V
BE(on)
f
C
h
NF
T
cb
fe
250
250
250
— 0.3 Vdc
— 0.85 Vdc
40 — MHz
— 4.0 pF
250 900
—
—
800
—
—
dB
2.0
2.0
—
—
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL NOISE CHARACTERISTICS
(VCE = –ā5.0 Vdc, TA = 25°C)
2N5087
10
7.0
5.0
3.0
1.0 mA
, NOISE VOLTAGE (nV)
2.0
n
e
1.0
10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k
IC = 10 µA
30 µA
100 µA
300 µA
f, FREQUENCY (Hz)
BANDWIDTH = 1.0 Hz
RS
≈
0
Figure 1. Noise V oltage
NOISE FIGURE CONTOURS
(VCE = –ā5.0 Vdc, TA = 25°C)
1.0 M
500 k
200 k
100 k
50 k
20 k
10 k
5.0 k
2.0 k
1.0 k
, SOURCE RESISTANCE (OHMS)
S
500
R
200
100
10
0.5 dB
1.0 dB
20 30 50 70 100 200 300 500 700 1.0 k 10 20 30 50 70 100 200 300 500 700 1.0 k
IC, COLLECTOR CURRENT (µA)
BANDWIDTH = 1.0 Hz
2.0 dB
3.0 dB
5.0 dB
1.0
7.0
5.0
3.0
2.0
1.0
0.7
0.5
, NOISE CURRENT (pA)
n
I
0.3
0.2
0.1
10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k
IC = 1.0 mA
300 µA
100 µA
30 µA
10 µA
f, FREQUENCY (Hz)
BANDWIDTH = 1.0 Hz
RS
Figure 2. Noise Current
1.0 M
500 k
200 k
100 k
50 k
20 k
10 k
5.0 k
2.0 k
1.0 k
, SOURCE RESISTANCE (OHMS)
S
500
R
200
100
0.5 dB
IC, COLLECTOR CURRENT (µA)
BANDWIDTH = 1.0 Hz
1.0 dB
2.0 dB
3.0 dB
≈∞
5.0 dB
Figure 3. Narrow Band, 100 Hz
1.0 M
500 k
200 k
100 k
50 k
20 k
10 k
5.0 k
2.0 k
1.0 k
, SOURCE RESISTANCE (OHMS)
S
500
R
200
100
0.5 dB
20 30 50 70 100 200 300 500 700 1.0 k
10
IC, COLLECTOR CURRENT (µA)
10 Hz to 15.7 kHz
1.0 dB
2.0 dB
3.0 dB
5.0 dB
Figure 5. Wideband
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 4. Narrow Band, 1.0 kHz
Noise Figure is Defined as:
2
2
2
e
)
NF+20 log
e
= Noise Voltage of the Transistor referred to the input. (Figure 3)
n
I
= Noise Current of the Transistor referred to the input. (Figure 4)
n
K
= Boltzman’s Constant (1.38 x 10
T
= Temperature of the Source Resistance (°K)
R
= Source Resistance (Ohms)
S
10
ƪ
4KTRS)
n
4KTR
I
n
S
R
–23
S
j/°K)
ƫ
1ń2
3
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