Motorola 2N3716, 2N3715 Datasheet

3–12

Motorola Bipolar Power Transistor Device Data

   

. . . designed for medium–speed switching and amplifier applications. These devices feature:

• Total Switching Time at 3 A typically 1.15 µs

• Gain Ranges Specified at 1 A and 3 A

• Low V

CE(sat)

: typically 0.5 V at IC = 5 A and IB = 0.5 A

• Excellent Safe Operating Areas

• Complement to 2N3791–92

MAXIMUM RATINGS

Rating

Symbol

2N3715

2N3716

ÎÎÎÎ

Unit

Collector–Emitter Voltage

V

CEO

60

80

ÎÎÎÎ

Volts

Collector–Base Voltage

V

CB

80

100

ÎÎÎÎ

Volts

Emitter–Base Voltage

V

EB

7.0

ÎÎÎÎ

Volts

Collector Current

I

C

10

ÎÎÎÎ

Amps

Base Current

I

B

4.0

ÎÎÎÎ

Amps

Power Dissipation

P

D

150

ÎÎÎÎ

Watts

Thermal Resistance

θ

JC

1.17

ÎÎÎÎ

_

C/W

Operating Junction and Storage Temperature Range

TJ, T

stg

–65 to +200

ÎÎÎÎ

_

C

Safe Area Limits are indicated by Figures 12, 13. Both limits are applicable and must be observed.

140 120 100

80 60

40

0

20

0 25 50 75 100 125 150 175 200

Figure 1. Power–Temperature Derating Curve

TC, CASE TEMPERATURE (°C)

P

D

, POWER DISSIPATION (WATTS)

160



SEMICONDUCTOR TECHNICAL DATA

Order this document

by 2N3715/D

 Motorola, Inc. 1995

 

10 AMPERE

POWER TRANSISTORS

SILICON NPN 60–80 VOLTS

150 WATTS



CASE 1–07

TO–204AA

(TO–3)

REV 7

 

3–13

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (T

C

= 25_C unless otherwise noted)

Characteristic

ÎÎÎÎ

Symbol

Min

Max

ÎÎÎ

Unit

Emitter–Base Cutoff Current

(VEB = 7.0 Vdc) All Types

ÎÎÎÎ

I

EBO

—

5.0

ÎÎÎ

mAdc

Collector–Emitter Cutoff Current

(VCE = 80 Vdc, VBE = –1.5 Vdc) 2N3715 (VCE = 100 Vdc, VBE = –1.5 Vdc) 2N3716 (VCE = 60 Vdc, VBE = –1.5 Vdc, TC = 150_C) 2N3715 (VCE = 80 Vdc, VBE = –1.5 Vdc, TC = 150_C) 2N3716

ÎÎÎÎ

I

CEX

— — — —

1.0

1.0 10 10

ÎÎÎ

mAdc

Collector–Emitter Sustaining Voltage (1)

(IC = 200 mAdc, IB = 0) 2N3715

2N3716

ÎÎÎÎ

V

CEO(sus)

*

60 80

— —

ÎÎÎ

Vdc

DC Current Gain (1)

(IC = 1.0 Adc, VCE = 2.0 Vdc) 2N3715, 2N3716 (IC = 3.0 Adc, VCE = 2.0 Vdc) 2N3715, 2N3716

ÎÎÎÎ

hFE*

50 30

150

—

ÎÎÎ

—

Collector–Emitter Saturation Voltage (1)

(IC = 5.0 Adc, IB = 0.5 Adc) 2N3715, 2N3716

ÎÎÎÎ

V

CE(sat)

*

—

0.8

ÎÎÎ

Vdc

Base–Emitter Saturation Voltage (1)

(IC = 5.0 Adc, IB = 0.5 Adc) 2N3715, 2N3716

ÎÎÎÎ

V

BE(sat)

*

—

1.5

ÎÎÎ

Vdc

Base–Emitter Voltage (1)

(IC = 3.0 Adc, VCE = 2.0 Vdc) All Types

ÎÎÎÎ

VBE*

—

1.5

ÎÎÎ

Vdc

Small Signal Current Gain

(VCE = 10 Vdc, IC = 0.5 Adc, f = 1.0 MHz) All Types

ÎÎÎÎ

h

fe

4.0

—

ÎÎÎ

—

Switching Times (Figure 2)

ÎÎÎÎ

Typ

ÎÎÎ

µs

(IC = 5.0 A, IB1 = IB2 = 0.5 Adc)

Rise Time Storage Time Fall Time

ÎÎÎÎ

t

r

t

s

t

f

0.45

0.3

0.4

ÎÎÎ

(1) Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%.

1.5

0.1

Figure 2. Typical Switching Times

IC, COLLECTOR CURRENT (AMPS)

1.0

0.7

0.5

0.3

0.2

0.1

0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0

SWITCHING TIMES ( s)

µ

t

s

t

f

t

r

IB1 = I

B2

+11.5 V

ton ~ 30 µs

–9 V

TEST CIRCUIT

~4.8 ms

WAVE SHAPE

AT POINT A

IC = 5 A, IB1 = IB2 = 0.5 A f

≈

150 cps DUTY CYCLE ≈ 2%

+30 V

6

Ω

4 W

900

Ω

100

Ω

–4 V

900

Ω

100

Ω

1 W

20

Ω

1 W

A

Hg RELAYS

+62 V –9 V

100

Ω

t

off

~1.7 ms

 

3–14

Motorola Bipolar Power Transistor Device Data

10

0.1

Figure 3. Collector Current versus Base Current

IB, BASE CURRENT (mA)

7.0

5.0

3.0

2.0

1.0

0.07

0.05

0.01

0.2 0.5 1.0 5.0 20 50 100 1000200

0.03

0.02

I

C

, COLLECTOR CURRENT (AMPS)

TJ = 175°C

2.0 10 500

–40°C

VCE = 2 V

SEE NOTES 1, 2

25°C

2N3715, 2N3716

1000

0

Figure 4. Base Current–Voltage Variations

VBE, BASE–EMITTER VOLTAGE (VOLTS)

700

1.0

0.4 0.8 1.6 2.0

I

B

, BASE CURRENT (mA)

TJ = 175°C

1.2

–40°C

VCE = 2 V

SEE NOTE 2

25°C

500 300

200 100

70 50

30 20

10

7.0

5.0

3.0

2.0

10

0.1

Figure 5. Collector Current–Voltage Variations

VBE, BASE–EMITTER VOLTAGE (VOLTS)

7 5

3 2

1

0.7

0.5

0.1

0.4 1.6 2.0

0.3

0.2

I

C

, COLLECTOR CURRENT (AMPS)

TJ = 175°C

0.8 1.2

–40°C

25°C

2N3715, 2N3716

VCE = 2 V

SEE NOTE 2

0.1

0.2

0.3

0.5

0.7

NOTE 1. Dotted line indicates metered base current plus the I

CBO

of the transistor at 175_C.

NOTE 2. Pulse test: pulse width ≈ 200 µsec, duty cycle ≈ 1.5%.

 

3–15

Motorola Bipolar Power Transistor Device Data

Figure 6. Collector–Emitter Saturation Voltage Variations

IB, BASE CURRENT (mA)

1.4

0.1 10

1.2

1.0

0.8

0.6

0.4

0.2

20 30 50 70 100 200 300 500 700 1000 2000

V

CE(sat)

, COLLECTOR–EMITTER SATURATION

VOLTAGE (VOLTS)

TJ = 25

°

C

–40

°

C

175

°

C

SEE NOTE 2

IC = 5 A

Figure 7. Base–Emitter Saturation Voltage Variations

IB, BASE CURRENT (mA)

1.4

0.1 10

1.2

1.0

0.8

0.6

0.4

0.2

20 30 50 70 100 200 300 500 700 1000 2000

V

BE(sat)

, BASE–EMITTER SATURATION

VOLTAGE (VOLTS)

10

Figure 8. Collector Current versus

Base–Emitter Voltage

VBE, BASE–EMITTER VOLTAGE (VOLTS)

, COLLECTOR CURRENT (mA)I

C

0.1 –0.6 –0.4 –0.2 0 0.2 0.4

TJ = 175°C

REVERSE

FORWARD

7.0

5.0

3.0

2.0

1.0

0.7

0.5

0.3

0.2

TJ = 100°C

VCE = V

CEO

– 20 V

SEE NOTE 2

100

Figure 9. Collector Current versus

Base–Emitter Resistance

RBE, EXTERNAL BASE–EMITTER RESISTANCE (OHMS)

, COLLECTOR CURRENT (mA)I

C

0.1 1 10 100 1000 10,000 100,000

50 30

20 10

5.0

3.0

2.0

1.0

0.5

0.3

0.2

IC = 3 A

IC = 1 A

IC = 5 A

IC = 3 A

IC = 1 A

TJ = 25

°

C

–40

°

C

175

°

C

SEE NOTE 2

VCE = V

CEO

– 20 V

SEE NOTE 2

TJ = 175°C

TJ = 100°C

 

3–16

Motorola Bipolar Power Transistor Device Data

Figure 10. Current Gain Variations

IC, COLLECTOR CURRENT (AMPS)

0

0.01

200

150

100

50

0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 102.0 3.0 5.0 7.0

TJ = 175°C

–40°C

VCE = 2 V

25°C

h

FE

+

IC– I

CBO

I

B

)

I

CBO

Figure 11. Current Gain — Bandwidth Product versus Collector Current

IC, COLLECTOR CURRENT (AMPS)

0

0.1

8

6

4

2

0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0

VCE = 6 V

f , CURRENT GAIN — BANDWIDTH PRODUCT (mc)

τ

h

FE

, CURRENT GAIN

10

0

Figure 12. 2N3715

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

7 5

3 2

1

0.7

0.5

0.1 10 20 30 40 50 60 70

0.3

0.2

I

C

, COLLECTOR CURRENT (AMPS)

DC to 5 ms

500 µs

250 µs

10

0

Figure 13. 2N3716

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

7 5

3 2

1

0.7

0.5

0.1 10 20 30 40 50 60 70

0.3

0.2

I

C

, COLLECTOR CURRENT (AMPS)

500 µs

250 µs

≤

50 µs

SAFE OPERATING AREAS

80 90

DC to 5 ms

1 ms

≤

50 µs

1 ms

The Safe Operating Area Curves indicate IC – VCE limits below which the device will not go into secondary breakdown. Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a collector–emitter

short. (Duty cycle of the excursions make no significant change in these safe areas.) To insure operation below the maximum TJ, the power–temperature derating curve must be observed for both steady state and pulse power conditions.

 

3–17

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO–204AA OUTLINE SHALL APPLY.

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A 1.550 REF 39.37 REF B ––– 1.050 ––– 26.67 C 0.250 0.335 6.35 8.51 D 0.038 0.043 0.97 1.09 E 0.055 0.070 1.40 1.77 G 0.430 BSC 10.92 BSC H 0.215 BSC 5.46 BSC K 0.440 0.480 11.18 12.19 L 0.665 BSC 16.89 BSC N ––– 0.830 ––– 21.08 Q 0.151 0.165 3.84 4.19 U 1.187 BSC 30.15 BSC V 0.131 0.188 3.33 4.77

A

N

E

C

K

–T–

SEATING PLANE

2 PLD

M

Q

M

0.13 (0.005) Y

M

T

M

Y

M

0.13 (0.005) T

–Q–

–Y–

2

1

U

L

G

B

V

H

CASE 1–07

TO–204AA (TO–3)

ISSUE Z

How to reach us: USA /EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,

P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315

MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE (602) 244–6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters can and do vary in different applications. All operating parameters, including “T ypicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

2N3715/D

*2N3715/D*

◊

Motorola 2N3716, 2N3715 Datasheet

Specifications and Main Features

Frequently Asked Questions

User Manual