Motorola 2N3442 Datasheet
1
Motorola Bipolar Power Transistor Device Data
NPN silicon power transistor designed for applications in industrial and commercial
equipment including high fidelity audio amplifiers, series and shunt regulators and
power switches.
• Collector –Emitter Sustaining Voltage —
V
CEO(sus)
= 140 Vdc (Min)
• Excellent Second Breakdown Capability
*MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
V
CEO
140
Vdc
Collector–Base Voltage
V
CB
160
Vdc
Emitter–Base Voltage
V
EB
7.0
Vdc
Collector Current — Continuous
Collector Current — Peak
I
C
10
15**
Adc
Base Current — Continuous
Peak
I
B
7.0
—
Adc
Total Power Dissipation @ TC = 25_C
Derate above 25_C
P
D
117
0.67
Watts
W/_C
Operating and Storage Junction
Temperature Range
TJ, T
stg
–65 to +200
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
1.5
_
C/W
*Indicates JEDEC Registered Data.
**This data guaranteed in addition to JEDEC registered data.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N3442/D
Motorola, Inc. 1995
10 AMPERE
POWER TRANSISTOR
NPN SILICON
140 VOLTS
117 WATTS
CASE 1–07
TO–204AA
(TO–3)
REV 7
2N3442
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Symbol
Min
Max
ÎÎÎ
ÎÎÎ
ÎÎÎ
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 200 mAdc, IB = 0)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
V
CEO(sus)
140
—
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
Collector Cutoff Current
(VCE = 140 Vdc, IB = 0)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
I
CEO
—
200
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
mAdc
Collector Cutoff Current
(VCE = 140 Vdc, V
BE(off)
= 1.5 Vdc)
(VCE = 140 Vdc, V
BE(off)
= 1.5 Vdc, TC = 150_C)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
I
CEX
—
—
5.0
30
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
mAdc
Emitter Cutoff Current
(VBE = 7.0 Vdc, IC = 0)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
I
EBO
—
5.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 3.0 Adc, VCE = 4.0 Vdc)
(IC = 10 Adc, VCE = 4.0 Vdc)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
h
FE
20
7.5
70
—
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
—
Collector–Emitter Saturation Voltage
(IC = 10 Adc, IB = 2.0 Adc)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
V
CE(sat)
—
5.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
Base–Emitter On Voltage
(IC = 10 Adc, VCE = 4.0 Vdc)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
V
BE(on)
—
5.7
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product (2)
(IC = 2.0 Adc, VCE = 4.0 Vdc, f
test
= 40 kHz)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
f
T
80
—
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
kHz
Small–Signal Current Gain
(IC = 2.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
h
fe
12
72
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
—
*Indicates JEDEC Registered Data.
NOTES:
1. Pulse Test: Pulse Width = 300 µs, Duty Cycle v 2.0%.
2. fT = |hfe| • f
test
1.0
0
0 25 50 75 100 125 150 175 200
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)
/P
D(MAX)
, POWER DISSIPATION (NORMALIZED)
0.8
0.6
0.4
0.2
P
D
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