MITSUBISHI RA 07 N 3340 M Service Manual
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ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF MOSFET MODULE
RA07N3340M
RoHS Compliance , 330-400MHz
DESCRIPTION
The RA07N3340M is a 7.5-watt RF MOSFET Amplifier
Module for 9.6-volt portable radios that operate in the 330- to
400-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (V
=0V), only a small leakage current flows into the
GG
drain and the RF input signal attenuates up to 60 dB. The output
power and drain current increase as the gate voltage increases.
With a gate voltage around 2.5V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 3V (typical) and 3.5V (maximum). At
=3.5V, the typical gate current is 1 mA.
V
GG
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power
with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(I
≅0 @ VDD=9.6V, VGG=0V)
DD
• P
>7.5W @ VDD=9.6V, VGG=3.5V, Pin=20mW
out
• η
>43% @ P
T
=7W (VGG control), VDD=9.6V, Pin=20mW
out
• Broadband Frequency Range: 330-400MHz
• Low-Power Control Current I
=1mA (typ) at VGG=3.5V
GG
• Module Size: 30 x 10 x 5.4 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power
with the input power
7.5W 9.6V 2 Stage Amp. For PORTABLE RADIO
BLOCK DIAGRAM
2
1
1 RF Input (Pin)
2 Gate Voltage (V
3 Drain Voltage (V
4 RF Output (P
5 RF Ground (Case)
out
GG
)
DD
3
4
5
), Power Control
), Battery
PACKAGE CODE: H46S
RoHS COMPLIANCE
• RA07N3340M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER SUPPLY FORM
RA07N3340M-101
Antistatic tray,
25 modules/tray
RA07N3340M
MITSUBISHI ELECTRIC
1/8
24 Jan 2006
MITSUBISHI RF POWER MODULE
RA07N3340M
MAXIMUM RATINGS
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
(T
=+25°C, unless otherwise specified)
case
RoHS COMPLIANCE
SYMBOL PARAMETER CONDITIONS RATING UNIT
V
V
V
P
P
T
case(OP)
T
Drain Voltage VGG=0V, Pin=0W 16 V
DD
Drain Voltage VGG<3.5V 13.2 V
DD
Gate Voltage VDD<9.6V, Pin<20mW 4 V
GG
Input Power 30 mW
in
Output Power
out
Operation Case Temperature Range -30 to +90 °C
Storage Temperature Range
stg
f=330-400MHz,
Z
=50Ω
G=ZL
10 W
-40 to +110 °C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS
(T
=+25°C, ZG=ZL=50Ω, unless otherwise specified)
case
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
f Frequency Range 330 400 MHz
P
η
2f
ρ
I
GG
— Stability
— Load VSWR Tolerance
Output Power
out
Total Efficiency 43 %
T
2nd Harmonic -25 dBc
o
Input VSWR 4:1 —
in
V
=9.6V,VGG=3.5V, Pin=20mW
DD
P
=7W (VGG control),
out
=9.6V,
V
DD
=20mW
P
in
Gate Current
=4.8-13.2V, Pin=10-30mW, P
V
DD
<8W (VGG control),
out
Load VSWR=4:1
V
=13.2V, Pin=20mW, P
DD
=7.5W (VGG control),
out
Load VSWR=20:1
7.5 W
1 mA
No parasitic oscillation —
No degradation or destroy —
All parameters, conditions, ratings, and limits are subject to change without notice.
RA07N3340M
MITSUBISHI ELECTRIC
2/8
24 Jan 2006
TYPICAL PERFORMANCE
OUTPUT POWER, TOTAL EFFICIENCY, 2nd, 3rd HARMONICS versus FREQUENCY
and INPUT VSWR versus FREQUENCY
14
P
12
(W)
out
(-)
in
10
ρ
8
6
4
INPUT VSWR
2
OUTPUT POWER P
ρ
0
320 330 340 350 360 370 380 390 400 410
FREQUENCY f(MHz)
out
η
T
@P
=7W
in
out
OUTPUT POWER, POWER GAIN and OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER DRAIN CURRENT versus INPUT POWER
50
40
Gp
30
(dBm)
out
20
P
OUTPUT POWER
10
POWER GAIN Gp(dB)
0
-15 -10 -5 0 5 10 15 20
I
DD
INPUT POWER P
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
50
40
30
(dBm)
out
20
P
OUTPUT POWER
10
POWER GAIN Gp(dB)
0
Gp
-15 -10 -5 0 5 10 15 20
INPUT POWER P
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
(T
=+25°C, ZG=ZL=50Ω, unless otherwise specified)
case
140
@VGG=3.5V
120
100
@P
out
=7W
VDD=9.6V
P
=20mW
in
80
60
40
(%)
T
η
20
TOTAL EFFICIENCY
0
5
P
out
(A)
4
DD
3
2
(dBm)
in
f=330MHz,
V
=9.6V,
DD
=3.5V
V
GG
1
DRAIN CURRENT I
0
5
P
out
(A)
4
DD
3
2
I
DD
(dBm)
in
f=400MHz,
=9.6V,
V
DD
V
=3.5V
GG
1
DRAIN CURRENT I
0
RoHS COMPLIANCE
-20
VDD=9.6V
-30
-40
nd
2
@P
=7W
out
P
-50
rd
3
@P
HARMONICS (dBc)
-60
=7W
out
-70
320 330 340 350 360 370 380 390 400 410
FREQUENCY f(MHz)
50
40
Gp
30
(dBm)
out
20
P
I
OUTPUT POWER
10
POWER GAIN Gp(dB)
DD
0
-15 -10 -5 0 5 10 15 20
INPUT POWER P
(dBm)
in
MITSUBISHI RF POWER MODULE
RA07N3340M
=20mW
in
5
P
out
f=360MHz,
V
=9.6V,
DD
V
=3.5V
GG
(A)
4
DD
I
3
2
1
DRAIN CURRENT
0
OUTPUT POWER and DRAIN CURRENT OUTPUT POWER and DRAIN CURRENT
25
(W)
20
out
15
10
5
OUTPUT POWER P
0
RA07N3340M
versus DRAIN VOLTAGE versus DRAIN VOLTAGE
f=330MHz,
=3.5V,
V
GG
P
=20mW
in
I
DD
P
out
24681012
DRAIN VOLTAGE V
(V)
DD
MITSUBISHI ELECTRIC
(W)
out
OUTPUT POWER P
25
20
15
10
5
0
f=360MHz,
=3.5V,
V
GG
P
=20mW
in
P
out
I
DD
5
4
(A)
DD
3
2
1
DRAIN CURRENT I
0
5
4
(A)
DD
3
2
1
DRAIN CURRENT I
0
2 4 6 8 10 12
DRAIN VOLTAGE V
(V)
DD
24 Jan 2006
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