MITSUBISHI RA07M4452MSA User Manual

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

RoHS Compliance ,

440-520MHz 7.0W 7.2V, 2 Stage Amp. For PORTABLE RADIO

Silicon RF Power Semiconductors

RA07M4452

RARA

07M4452M

07M445207M4452

MSA

SASA

DESCRIPTION

The RA07M4452MSA is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 440- to 520-MHz range.

The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 2.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3V (typical) and 3.5V (maximum). At VGG=3.5V, the typical gate current is 1 mA.

This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.

FEATURES

• Enhancement-Mode MOSFET Transistors

(IDD≅0 @ VDD=7.2V, VGG=0V)

• P

>7.0W @ VDD=7.2V, VGG=3.5V, Pin=50mW

out

• ηT>40% @ P

• Broadband Frequency Range: 440-520MHz

• Low-Power Control Current IGG=1mA (typ) at VGG=3.5V

• Module Size: 30 x 9.6 x 5.3 mm

• Linear operation is possible by setting the quiescent drain

current with the gate voltage and controlling the output power with the input power

=6.5W (VGG control), VDD=7.2V, Pin=50mW

out

BLOCK DIAGRAM

1 RF Input (Pin) 2 Gate Voltage (VGG), Power Control 3 Drain Voltage (VDD), Battery 4 RF Output (P 5 RF Ground (Case)

out

)

RoHS COMPLIANCE

• RA07M4452MSA-101 is a RoHS compliant products.

• RoHS compliance is indicate by the letter “G” after the Lot Marking.

• This product include the lead in the Glass of electronic parts and the

lead in electronic Ceramic parts. How ever,it applicable to the following exceptions of RoHS Directions.

1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes.

2.Lead in electronic Ceramic parts.

ORDERING INFORMATION:

ORDER NUMBER SUPPLY FORM

RA07M4452MSA-101

Antistatic tray,

50 modules/tray

RA07M4452MSA

1/9

30 Jun 2010

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

MAXIMUM RATINGS

SYMBOL PARAMETER CONDITIONS RATING UNIT

VDD Drain Voltage VGG<3.5V 9.2 V VGG Gate Voltage VDD<7.2V, Pin=0mW 4 V

Pin Input Power 70 mW

Output Power 10 W

out

case(OP)

The above parameters are independently guaranteed.

Operation Case Temperature Range

Storage Temperature Range -40 to +110 °C

stg

=+25°C, unless otherwise specified)

case

f=400-470MHz,VGG<3.5V ZG=ZL=50Ω

RoHS COMPLIANCE

Silicon RF Power Semiconductors

RA07M4452

07M4452MMMMSA

RARA

07M445207M4452

-30 to +90 °C

SASA

ELECTRICAL CHARACTERISTICS

=+25°C, ZG=ZL=50Ω, unless otherwise specified)

case

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

f Frequency Range 440 - 520 MHz

Output Power

out

ηT

2fo 2nd Harmonic - - -25 dBc 3fo 3rd Harmonic - - -30 dBc

ρin

IGG Gate Current

— Stability

— Load VSWR Tolerance

All parameters, conditions, ratings, and limits are subject to change without notice.

Total Efficiency 40 - - %

Input VSWR - - 4:1 —

VDD=7.2V,VGG=3.5V, Pin=50mW

=6.5W (VGG control),

out

VDD=7.2V, Pin=50mW

VDD=4.0-9.2V, Pin=25-70mW, P Load VSWR=8:1

VDD=9.2V, Pin=50mW, P Load VSWR=20:1

=7W (VGG control),

out

<8W (VGG control),

out

7.0 - - W

- 1 - mA

No parasitic oscillation

No degradation or destroy —

—

RA07M4452MSA

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and INPUT VSWR versus FREQUENCY

OUTPUT POWER, POWER GAIN and

DRAIN CURRENT versus INPUT POWER

OUTPUT POWER, POWER GAIN and

DRAIN CURRENT versus INPUT POWER

OUTPUT POWER and DRAIN CURRENT

versus DRAIN VOLTAGE

TYPICAL PERFORMANCE

OUTPUT POWER, TOTAL EFFICIENCY, 2nd, 3rd HARMONICS versus FREQUENCY

(W)

out

OUTPUT POWER P

VDD=7.2V

VGG=3.5V

Pin=50mW

5 4 3

INPUT VSWR(-)

2 1 0

420 440 460 480 500 520 540

FREQUENCY f(MHz)

f=440MHz

VDD=7.2V

(dBm)

out

OUTPUT POWER P

VGG=3.5V

34 32

30 28 26

POWER GAIN(dB)

24 22 20

-10 -5 0 5 10 15 20

INPUT POWER PIN(dBm)

f=520MHz

VDD=7.2V

(dBm)

out

OUTPUT POWER P

VGG=3.5V

32 30 28 26

POWER GAIN(dB)

24 22 20

-10 -5 0 5 10 15 20

INPUT POWER PIN(dBm)

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

=+25°C, ZG=ZL=50Ω, unless otherwise specified)

case

out

ηt

ρin

out

100 90 80 70 60 50 40 30 20 10 0

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

TOTAL EFFICIENCY ηT(%)

(A)

DRAIN CURRENT I

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

RoHS COMPLIANCE

-20

-25

-30

-35

-40

-45

-50

HARMONICS(dBc)

-55

-60

-65

-70

40 38 36

(dBm)

out

34 32 30 28 26

POWER GAIN(dB)

24 22

OUTPUT POWER P

(A)

DRAIN CURRENT I

Silicon RF Power Semiconductors

RA07M4452

07M4452MMMMSA

RARA

07M445207M4452

VDD=7.2V VGG=3.5V Pin=50mW

420 440 460 480 500 520 540

f=490MHz VDD=7.2V VGG=3.5V

-10 -5 0 5 10 15 20

FREQUENCY f(MHz)

out

INPUT POWER PIN(dBm)

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

SASA

(A)

DRAIN CURRENT I

f=440MHz

PIN=50mW

(W)

VGG=3.5V

out

8 6 4

OUTPUT POWER P

2 0

0 1 2 3 4 5 6 7 8 9 10

RA07M4452MSA

DRAIN VOLTAGE VDD(V)

4.0

3.5

(A)

3.0

2.5

out

2.0

1.5

1.0

0.5

0.0

DRAIN CURRENT I

f=490MHz

PIN=50mW

(W)

VGG=3.5V

out

8 6 4

OUTPUT POWER P

2 0

0 1 2 3 4 5 6 7 8 9 10

DRAIN VOLTAGE VDD(V)

4.0

3.5

(A)

3.0

2.5

out

2.0

1.5

1.0

0.5

0.0

DRAIN CURRENT I

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