MITSUBISHI RA07M4452M User Manual
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Silicon RF Power Semiconductors
RA07M4452M
RoHS Compliance , 440-520MHz
DESCRIPTION
The RA07M4452M is a 7-watt RF MOSFET Amplifier
Module for 7.2-volt portable radios that operate in the 440- to
520-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (V
=0V), only a small leakage current flows into the
GG
drain and the RF input signal attenuates up to 60 dB. The output
power and drain current increase as the gate voltage increases.
With a gate voltage around 2.5V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 3V (typical) and 3.5V (maximum). At
=3.5V, the typical gate current is 1 mA.
V
GG
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power
with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(I
≅0 @ VDD=7.2V, VGG=0V)
DD
• P
>7W @ VDD=7.2V, VGG=3.5V, Pin=50mW
out
• η
>40% @ P
T
=6.5W (VGG control), VDD=7.2V, Pin=50mW
out
• Broadband Frequency Range: 440-520MHz
• Low-Power Control Current I
=1mA (typ) at VGG=3.5V
GG
• Module Size: 30 x 10 x 5.4 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power
with the input power
7W
7.2V, 2 Stage Amp. For PORTABLE RADIO
BLOCK DIAGRAM
2
1
1 RF Input (Pin)
2 Gate Voltage (V
3 Drain Voltage (V
4 RF Output (P
5 RF Ground (Case)
out
GG
)
DD
3
), Power Control
), Battery
PACKAGE CODE: H46S
4
5
RoHS COMPLIANCE
• RA07M4452M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER SUPPLY FORM
RA07M4452M-101
Antistatic tray,
50 modules/tray
RA07M4452M
1/9
30 Jun 2010
Silicon RF Power Semiconductors
RA07M4452M
MAXIMUM RATINGS
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
(T
=+25°C, unless otherwise specified)
case
RoHS COMPLIANCE
SYMBOL PARAMETER CONDITIONS RATING UNIT
VDD Drain Voltage VGG<3.5V 9.2 V
VGG Gate Voltage VDD<7.2V, Pin=0mW 4 V
Pin Input Power 70 mW
P
Output Power 10 W
out
T
Operation Case Temperature Range
case(OP)
T
Storage Temperature Range -40 to +110 °C
stg
f=440-520MHz,
ZG=ZL=50Ω
-30 to +90 °C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS
(T
=+25°C, ZG=ZL=50Ω, unless otherwise specified)
case
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
f Frequency Range 440 - 520 MHz
P
Output Power
out
η
Total Efficiency 40 - - %
T
2fo 2nd Harmonic - - -25 dBc
ρ
Input VSWR - - 4:1 —
in
=7.2V,VGG=3.5V, Pin=50mW
V
DD
P
=6.5W (VGG control),
out
VDD=7.2V,
=50mW
P
in
IGG Gate Current
— Stability
— Load VSWR Tolerance
=4.0-9.2V, Pin=25-70mW, P
V
DD
Load VSWR=4:1
=9.2V, Pin=50mW, P
V
DD
Load VSWR=20:1
out
<8W (VGG control),
out
=7W (VGG control),
All parameters, conditions, ratings, and limits are subject to change without notice.
7 - - W
- 1 - mA
No parasitic oscillation —
No degradation or destroy —
RA07M4452M
2/9
30 Jun 2010
TYPICAL PERFORMANCE
OUTPUT POWER, TOTAL EFFICIENCY, 2nd, 3rd HARMONICS versus FR E QUE NCY
and INPUT VSWR versus FREQUENCY
10
9
8
(W)
(-)
out
7
in
ρ
6
5
4
3
INPUT VSWR
2
OUTP UT P O WE R P
1
0
430 450 470 490 510 530
P
out
@P
=6.5W
η
T
out
@P
=6.5W
ρ
out
in
FREQ UENCY f(MHz)
OUTPUT POWER, POWER GAIN a n d OUTPUT POWER, POWER GAIN a n d
DRAIN CURRENT versus INPUT POWER DRAIN CURRENT versus INP UT POWER
50
f=440MHz,
V
=7.2V,
DD
=3.5V
V
40
(dBm)
out
GG
Gp
30
20
POWER GAI N Gp(dB)
10
OUTP UT POWER P
0
-10-5 0 5 101520
INPUT POWER P
OUTPUT POWER, POWER GAI N a n d
DRAIN CURRENT versus INPUT POWER
50
f=520MHz,
=7.2V ,
V
DD
=3.5V
V
40
(dBm)
out
OUTP UT P O WER P
GG
30
Gp
20
POWER GAIN Gp(dB)
10
0
-10 -5 0 5 10 15 20
INPUT POWER P
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
(T
=+25°C, ZG=ZL=50Ω, unless otherwise specified)
case
100
=3.5V
@V
GG
VDD=7.2V
=50m W
P
in
P
out
I
DD
(dBm)
in
P
out
I
DD
(dBm)
in
90
(%)
80
T
η
70
60
50
40
30
20
TOTAL EFFICIENCY
10
0
10
8
(A)
DD
6
4
2
DRAI N CURRENT I
0
10
8
(A)
DD
6
4
2
DRAI N CURRENT I
0
Silicon RF Power Semiconductors
RoHS COMPLIANCE
-20
-30
-40
-50
HARM ONICS (dB c)
-60
-70
430 450 470 490 510 530
50
f=480MHz,
=7.2V,
V
DD
40
=3.5V
V
(dBm)
out
GG
30
20
POWER GAIN Gp(dB)
10
OUTP UT POWER P
0
-10-5 0 5101520
INPUT POWER P
nd
@P
2
out
rd
@P
=6.5W
3
out
FREQ UENCY f(MHz )
Gp
I
RA07M4452M
VDD=7.2V
=50m W
P
in
=6.5W
P
out
DD
(dBm)
in
10
8
(A)
DD
I
6
4
2
DRAI N CURRE NT
0
OUTPUT POWER and DRAIN CURRENT OUTPUT POWER and DRAIN CURRENT
16
14
(W)
12
out
10
8
6
4
OUTP UT POWER P
2
0
456789
RA07M4452M
vers us D RAIN VOL TAGE versus DRAIN VOLTAGE
f=440MHz,
=3.5V,
V
GG
=50m W
P
in
P
out
8
6
(A)
DD
4
I
DD
2
DRAI N CURRENT I
0
DRAIN VOLTAGE V
(V)
DD
16
f=480MHz,
14
(W)
12
out
V
GG
P
in
=3.5V ,
=50m W
10
8
6
4
OUTP UT POWER P
2
0
456789
DRAIN VOLTAGE V
3/9
8
6
P
out
(A)
DD
4
I
DD
2
DRAI N CURRENT I
0
(V)
DD
30 Jun 2010
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