MITSUBISHI RA07M3843M User Manual

ELECTROSTATIC SENSITIVE DEVICE

2

1

OBSERVE HANDLING PRECAUTIONS

RoHS Compliance ,

378-430MHz 7W 7.2V, 2Stage Amp. For PORTABLE RADIO

Silicon RF Power Semiconductors

RA

RA07M3843

RARA

07M3843M

07M384307M3843

M

MM

DESCRIPTION

The RA07M3843M is a 7-watt RF MOSFET Amplifier Module
for 7.2-volt portable radios that operate in the 378- to 430-MHz
range.

The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the
drain and the RF input signal attenuates up to 60 dB. The output
power and drain current increase as the gate voltage increases.
With a gate voltage around 2.5V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 3V (typical) and 3.5V (maximum). At
VGG=3.5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.

FEATURES

• Enhancement-Mode MOSFET Transistors

(IDD≅0 @ VDD=7.2V, VGG=0V)

• P

>7W @ VDD=7.2V, VGG=3.5V, Pin=50mW

out

• ηT>40% @ P

• Broadband Frequency Range: 378-430MHz

• Low-Power Control Current IGG=1mA (typ) at VGG=3.5V

• Module Size: 30 x 10 x 5.4 mm

• Linear operation is possible by setting the quiescent drain

current with the gate voltage and controlling the output power
with the input power

=6.5W (VGG control), VDD=7.2V, Pin=50mW

out

BLOCK DIAGRAM

1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (P
5 RF Ground (Case)

)

out

PACKAGE CODE: H46S

3

4

5

RoHS COMPLIANCE

• RA07M3843M-101 is a RoHS compliant products.

• RoHS compliance is indicate by the letter “G” after the Lot Marking.

• This product include the lead in the Glass of electronic parts and the

lead in electronic Ceramic parts.
How ever,it applicable to the following exceptions of RoHS Directions.

1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.

2.Lead in electronic Ceramic parts.

ORDERING INFORMATION:

ORDER NUMBER SUPPLY FORM

RA07M3843M-101

Antistatic tray,

50 modules/tray

RA07M3843M

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ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

MAXIMUM RATINGS

SYMBOL PARAMETER CONDITIONS RATING UNIT

VDD Drain Voltage VGG=0V, Pin=0mW 12 V
VDD Drain Voltage
VGG Gate Voltage 4 V

IDD Total Current 3.5 A
Pin Input Power 70 mW

P

Output Power 10 W

out

T

case(OP)

T

The above parameters are independently guaranteed.

Operation Case Temperature Range

Storage Temperature Range -40 to +110 °C

stg

(T

=+25°C, unless otherwise specified)

case

ZL=50Ω, VGG<3.5V

f=378-430MHz, VGG<3.5V
ZG=ZL=50Ω

RoHS COMPLIANCE

Silicon RF Power Semiconductors

RA

RA07M3843

07M3843MMMM

RARA

07M384307M3843

9.2 V

-30 to +90 °C

ELECTRICAL CHARACTERISTICS

(T

=+25°C, ZG=ZL=50Ω, unless otherwise specified)

case

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

f Frequency Range 378 - 430 MHz

P

Output Power

out

ηT

2fo 2nd Harmonic - - -25 dBc

ρin

IGG Gate Current
IDD Leakage Current VDD=9.2V, VGG=0V, Pin=0mW - - 100

— Stability

— Load VSWR Tolerance

All parameters, conditions, ratings, and limits are subject to change without notice.

Total Efficiency 40 - - %

Input VSWR - - 4:1 —

VDD=7.2V,VGG=3.5V, Pin=50mW

P

=6.5W (VGG control),

out

VDD=7.2V,
Pin=50mW

VDD=4.0-9.2V, Pin=25-70mW, P
Load VSWR=4:1

VDD=9.2V, Pin=50mW, P
Load VSWR=20:1

=7.0W (VGG control),

out

<8W (VGG control),

out

7 - - W

- 1 - mA

µ

No parasitic oscillation

No degradation or destroy —

—

A

RA07M3843M

30 Jun 2010

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and INPUT VSWR versus FREQUENCY

OUTPUT POWER, POWER GAIN and

OUTPUT POWER, POWER GAIN and

DRAIN CURRENT versus INPUT POWER

DRAIN CURRENT versus INPUT POWER

OUTPUT POWER, POWER GAIN and

DRAIN CURRENT versus INPUT POWER

OUTPUT POWER and DRAIN CURRENT

OUTPUT POWER and DRAIN CURRENT

versus DRAIN VOLTAGE

versus DRAIN VOLTAGE

TYPICAL PERFORMANCE

OUTPUT POWER, TOTAL EFFICIENCY, 2nd, 3rd HARMONICS versus FREQUENCY

10

9

(W)

8

out

(-)

in

7

ρ

6
5
4
3

INPUT VSWR

2

OUTPUT POWER P

1
0

370 380 390 400 410 420 430 440

P

@VGG=3.5V

out

ηηηη

@P

T

ρρρρ

@P

=6.5W

in

out

FREQUENCY f(MHz)

50

f=378MHz,
VDD=7.2V,

40

VGG=3.5V

30

(dBm)

out

20

P

OUTPUT POWER

10

POWER GAIN Gp(dB)

0

-14 -9 -4 1 6 11 16
INPUT POWER Pin(dBm)

50

f=430MHz,
VDD=7.2V,

40

VGG=3.5V

30

(dBm)

out

20

P

OUTPUT POWER

10

POWER GAIN Gp(dB)

0

-14 -9 -4 1 6 11 16
INPUT POWER Pin(dBm)

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

(T

=+25°C, ZG=ZL=50Ω, unless otherwise specified)

case

100
90
80
70

out

=6.5W

VDD=7.2V
Pin=50mW

60
50
40
30
20

(%)

T

η

TOTAL EFFICIENCY

10
0

10

P

out

Gp

I

DD

8

6

(A)

DD

I

4

DRAIN CURRENT

2

0

10

P

Gp

out

I

DD

8

6

(A)

DD

I

4

DRAIN CURRENT

2

0

Silicon RF Power Semiconductors

RoHS COMPLIANCE

-20

-30

nd

2

@P

-40

out

-50

rd

3

@P

=6.5W

HARMONICS (dBc)

-60

out

-70
370 380 390 400 410 420 430

FREQUENCY f(MHz)

50

f=400MHz,
VDD=7.2V,

40

VGG=3.5V

30

(dBm)

out

20

P

OUTPUT POWER

10

POWER GAIN Gp(dB)

Gp

P

out

I

DD

0

-14 -9 -4 1 6 11 16
INPUT POWER Pin(dBm)

RA

RA07M3843

07M3843MMMM

RARA

07M384307M3843

VDD=7.2V
Pin=50mW

=6.5W

10

8

6

(A)

DD

I

4

DRAIN CURRENT

2

0

16

f=378MHz,

14

(W)

OUTPUT POWER P

VGG=3.5V,

out

12

Pin=50mW

10

8
6
4
2
0

2 3 4 5 6 7 8 9 10

DRAIN VOLTAGE VDD(V)

RA07M3843M

8

(A)

P

out

I

DD

6

DD

4

2

DRAIN CURRENT I

0

16

f=400MHz,

14

VGG=3.5V,

(W)

out

Pin=50mW

12
10

8
6
4
2

OUTPUT POWER P

0

2 3 4 5 6 7 8 9 10

DRAIN VOLTAGE VDD(V)

P

out

8

(A)

6

DD

I

DD

4

2

DRAIN CURRENT I

0

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