MITSUBISHI RA07M3340M User Manual
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Silicon RF Power Semiconductors
RA07M3340M
RoHS Compliance , 330-400MHz
DESCRIPTION
The RA07M3340M is a 7-watt RF MOSFET Amplifier
Module for 7.2-volt portable radios that operate in the 330- to
400-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (V
=0V), only a small leakage current flows into the
GG
drain and the RF input signal attenuates up to 60 dB. The output
power and drain current increase as the gate voltage increases.
With a gate voltage around 2.5V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 3V (typical) and 3.5V (maximum). At
=3.5V, the typical gate current is 1 mA.
V
GG
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power
with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(I
≅0 @ VDD=7.2V, VGG=0V)
DD
• P
>7W @ VDD=7.2V, VGG=3.5V, Pin=50mW
out
• η
>40% @ P
T
=6.5W (VGG control), VDD=7.2V, Pin=50mW
out
• Broadband Frequency Range: 330-400MHz
• Low-Power Control Current I
=1mA (typ) at VGG=3.5V
GG
• Module Size: 30 x 10 x 5.4 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power
with the input power
7W
7.2V, 2Stage Amp. For PORTABLE RADIO
BLOCK DIAGRAM
2
1
1 RF Input (Pin)
2 Gate Voltage (V
3 Drain Voltage (V
4 RF Output (P
5 RF Ground (Case)
out
GG
)
DD
3
), Power Control
), Battery
PACKAGE CODE: H46S
4
5
RoHS COMPLIANCE
• RA07M3340M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER SUPPLY FORM
RA07M3340M-101
Antistatic tray,
50 modules/tray
RA07M3340M
1/9
30 Jun 2010
Silicon RF Power Semiconductors
RA07M3340M
MAXIMUM RATINGS
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
(T
=+25°C, unless otherwise specified)
case
RoHS COMPLIANCE
SYMBOL PARAMETER CONDITIONS RATING UNIT
VDD Drain Voltage VGG<3.5V 9.2 V
VGG Gate Voltage VDD<7.2V, Pin=0mW 4 V
Pin Input Power 70 mW
P
Output Power 10 W
out
T
Operation Case Temperature Range
case(OP)
T
Storage Temperature Range -40 to +110 °C
stg
f=330-400MHz,
ZG=ZL=50Ω
-30 to +90 °C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS
(T
=+25°C, ZG=ZL=50Ω, unless otherwise specified)
case
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
f Frequency Range 330 - 400 MHz
P
Output Power
out
η
Total Efficiency 40 - - %
T
2fo 2nd Harmonic - - -25 dBc
ρ
Input VSWR - - 4:1 —
in
=7.2V,VGG=3.5V, Pin=50mW
V
DD
P
=6.5W (VGG control),
out
VDD=7.2V,
=50mW
P
in
IGG Gate Current
— Stability
— Load VSWR Tolerance
=4.0-9.2V, Pin=25-70mW, P
V
DD
Load VSWR=4:1
=9.2V, Pin=50mW, P
V
DD
Load VSWR=20:1
out
<8W (VGG control),
out
=7.0W (VGG control),
All parameters, conditions, ratings, and limits are subject to change without notice.
7 - - W
- 1 - mA
No parasitic oscillation —
No degradation or destroy —
RA07M3340M
2/9
30 Jun 2010
TYPICAL PERFORMANCE
OUTPUT POWER, TOTAL EFFICIENCY, 2nd, 3rd HARMONICS versus FREQUENCY
and INPUT VSWR versus FREQUENCY
10
(W)
out
OUTP UT POWER P
(-)
in
INPUT VSWR
9
8
7
ρ
6
5
4
3
2
1
0
@V
=3.5V
P
GG
out
@P
η
T
@P
=6.5W
ρ
out
in
320 330 340 350 360 370 380 390 400 410
FREQUENCY f (MHz)
OUTPUT POWER, POWE R GAIN a nd OUTPUT POWER, POWE R GAIN a nd
DRAIN CURRENT versus INPUT POWER DRAIN CURRENT versus INPUT POWER
50
f=330MHz
=7.2V
V
DD
40
=3.5V
V
(dBm)
out
GG
30
20
10
POWER GAIN Gp (dB)
OUTPUT POWER P
0
-10 -5 0 5 10 15 20
I
DD
INPUT POWER P
OUTPUT POWER, POWE R GAIN a nd OUTPUT POWER, POWE R GAIN a nd
DRAIN CURRENT versus INPUT POWER DRAIN CURRENT versus INPUT POWER
50
40
(dBm)
out
30
OUTPUT POWER P
f=380MHz
20
POWER GAIN Gp (dB)
10
=7.2V
V
DD
=3.5V
V
GG
0
-10 -5 0 5 10 15 20
INPUT POWER P
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
(T
=+25°C, ZG=ZL=50Ω, unless otherwise specified)
case
=6.5W
out
Gp
I
DD
VDD=7.2V
P
Gp
(dBm)
in
(dBm)
in
=50mW
in
P
100
90
(%)
80
T
η
70
60
50
40
30
20
TOTAL EFFICIENCY
10
0
10
P
out
out
8
(A)
DD
6
4
2
DRAI N CURRENT I
0
10
8
(A)
DD
6
4
2
DRAI N CURRENT I
0
-20
-30
-40
-50
HARMONICS (dBc)
-60
-70
50
40
(dBm)
out
30
20
10
POWER GAIN Gp (dB)
OUTPUT POWER P
50
40
(dBm)
out
30
20
10
POWER GAIN Gp (dB)
OUTPUT POWER P
Silicon RF Power Semiconductors
RoHS COMPLIANCE
nd
@P
2
out
rd
3
320 330 340 350 360 370 380 390 400 410
f=350MHz
V
DD
V
GG
0
-10-5 0 5101520
0
-10-5 0 5101520
FREQ UENCY f (MHz)
=7.2V
=3.5V
I
DD
INPUT POWER P
f=400MHz
=7.2V
V
DD
=3.5V
V
GG
INPUT POWER P
RA07M3340M
VDD=7.2V
=50mW
P
in
=6.5W
@P
=6.5W
out
P
out
Gp
(dBm)
in
P
out
Gp
I
DD
(dBm)
in
10
8
(A)
DD
I
6
4
2
DRAI N CURRENT
0
10
8
(A)
DD
I
6
4
2
DRAI N CURRENT
0
RA07M3340M
3/9
30 Jun 2010
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