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RA07M3340M
User Manual
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MITSUBISHI RA07M3340M User Manual

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Page 1
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Silicon RF Power Semiconductors
RA07M3340M
RoHS Compliance , 330-400MHz
DESCRIPTION
The RA07M3340M is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 330- to 400-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (V
=0V), only a small leakage current flows into the
GG
drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 2.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3V (typical) and 3.5V (maximum). At
=3.5V, the typical gate current is 1 mA.
V
GG
This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(I
≅0 @ VDD=7.2V, VGG=0V)
DD
• P
>7W @ VDD=7.2V, VGG=3.5V, Pin=50mW
out
• η
>40% @ P
T
=6.5W (VGG control), VDD=7.2V, Pin=50mW
out
• Broadband Frequency Range: 330-400MHz
• Low-Power Control Current I
=1mA (typ) at VGG=3.5V
GG
• Module Size: 30 x 10 x 5.4 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power with the input power
7W
7.2V, 2Stage Amp. For PORTABLE RADIO
BLOCK DIAGRAM
2
1
1 RF Input (Pin) 2 Gate Voltage (V 3 Drain Voltage (V 4 RF Output (P 5 RF Ground (Case)
out
GG
)
DD
3
), Power Control
), Battery
PACKAGE CODE: H46S
4
5
RoHS COMPLIANCE
• RA07M3340M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts. How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER SUPPLY FORM
RA07M3340M-101
Antistatic tray,
50 modules/tray
RA07M3340M
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Page 2
Silicon RF Power Semiconductors
RA07M3340M
MAXIMUM RATINGS
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
(T
=+25°C, unless otherwise specified)
case
RoHS COMPLIANCE
SYMBOL PARAMETER CONDITIONS RATING UNIT
VDD Drain Voltage VGG<3.5V 9.2 V VGG Gate Voltage VDD<7.2V, Pin=0mW 4 V
Pin Input Power 70 mW
P
Output Power 10 W
out
T
Operation Case Temperature Range
case(OP)
T
Storage Temperature Range -40 to +110 °C
stg
f=330-400MHz, ZG=ZL=50Ω
-30 to +90 °C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS
(T
=+25°C, ZG=ZL=50Ω, unless otherwise specified)
case
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
f Frequency Range 330 - 400 MHz
P
Output Power
out
η
Total Efficiency 40 - - %
T
2fo 2nd Harmonic - - -25 dBc
ρ
Input VSWR - - 4:1 —
in
=7.2V,VGG=3.5V, Pin=50mW
V
DD
P
=6.5W (VGG control),
out
VDD=7.2V,
=50mW
P
in
IGG Gate Current
— Stability
— Load VSWR Tolerance
=4.0-9.2V, Pin=25-70mW, P
V
DD
Load VSWR=4:1
=9.2V, Pin=50mW, P
V
DD
Load VSWR=20:1
out
<8W (VGG control),
out
=7.0W (VGG control),
All parameters, conditions, ratings, and limits are subject to change without notice.
7 - - W
- 1 - mA
No parasitic oscillation —
No degradation or destroy —
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Page 3
TYPICAL PERFORMANCE
OUTPUT POWER, TOTAL EFFICIENCY, 2nd, 3rd HARMONICS versus FREQUENCY and INPUT VSWR versus FREQUENCY
10
(W)
out
OUTP UT POWER P
(-)
in
INPUT VSWR
9 8 7
ρ
6 5 4 3 2 1 0
@V
=3.5V
P
GG
out
@P
η
T
@P
=6.5W
ρ
out
in
320 330 340 350 360 370 380 390 400 410
FREQUENCY f (MHz)
OUTPUT POWER, POWE R GAIN a nd OUTPUT POWER, POWE R GAIN a nd DRAIN CURRENT versus INPUT POWER DRAIN CURRENT versus INPUT POWER
50
f=330MHz
=7.2V
V
DD
40
=3.5V
V
(dBm)
out
GG
30
20
10
POWER GAIN Gp (dB)
OUTPUT POWER P
0
-10 -5 0 5 10 15 20
I
DD
INPUT POWER P
OUTPUT POWER, POWE R GAIN a nd OUTPUT POWER, POWE R GAIN a nd DRAIN CURRENT versus INPUT POWER DRAIN CURRENT versus INPUT POWER
50
40
(dBm)
out
30
OUTPUT POWER P
f=380MHz
20
POWER GAIN Gp (dB)
10
=7.2V
V
DD
=3.5V
V
GG
0
-10 -5 0 5 10 15 20 INPUT POWER P
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
(T
=+25°C, ZG=ZL=50Ω, unless otherwise specified)
case
=6.5W
out
Gp
I
DD
VDD=7.2V P
Gp
(dBm)
in
(dBm)
in
=50mW
in
P
100 90
(%)
80
T
η
70 60 50 40 30 20
TOTAL EFFICIENCY
10 0
10
P
out
out
8
(A)
DD
6
4
2
DRAI N CURRENT I
0
10
8
(A)
DD
6
4
2
DRAI N CURRENT I
0
-20
-30
-40
-50
HARMONICS (dBc)
-60
-70
50
40
(dBm)
out
30
20
10
POWER GAIN Gp (dB)
OUTPUT POWER P
50
40
(dBm)
out
30
20
10
POWER GAIN Gp (dB)
OUTPUT POWER P
Silicon RF Power Semiconductors
RoHS COMPLIANCE
nd
@P
2
out
rd
3
320 330 340 350 360 370 380 390 400 410
f=350MHz V
DD
V
GG
0
-10-5 0 5101520
0
-10-5 0 5101520
FREQ UENCY f (MHz)
=7.2V =3.5V
I
DD
INPUT POWER P
f=400MHz
=7.2V
V
DD
=3.5V
V
GG
INPUT POWER P
RA07M3340M
VDD=7.2V
=50mW
P
in
=6.5W
@P
=6.5W
out
P
out
Gp
(dBm)
in
P
out
Gp
I
DD
(dBm)
in
10
8
(A)
DD
I
6
4
2
DRAI N CURRENT
0
10
8
(A)
DD
I
6
4
2
DRAI N CURRENT
0
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Page 4
TYPICAL PERFORMANCE
OUTPUT POWER an d DRA IN CURRENT OUTPUT POWER and DRAIN CURRENT
16 14
(W)
12
out
10
8 6 4
OUTP UT P O WER P
2 0
345678910
versus DRAIN VOLTAGE versus DRA IN VOLTA GE
f=330MHz V
=3.5V
GG
=50mW
P
in
DRAIN VOLTAGE V
OUTPUT POWER an d DRA IN CURRENT OUTPUT POWER and DRAIN CURRENT
16 14
(W)
12
out
10
8 6 4
OUTP UT POWER P
2 0
345678910
versus DRAIN VOLTAGE versus DRA IN VOLTA GE
f=380MHz
=3.5V
V
GG
=50mW
P
in
DRAIN VOLTAGE V
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
(T
=+25°C, ZG=ZL=50Ω, unless otherwise specified)
case
(W)
out
OUTP UT P O WER P
(W)
out
OUTP UT POWER P
16 14 12 10
16 14 12 10
8
P
out
6
(A)
DD
4
I
DD
2
DRAI N CURRENT I
0
(V)
DD
8
P
out
6
(A)
DD
4
I
DD
2
DRAI N CURR ENT I
0
(V)
DD
Silicon RF Power Semiconductors
RoHS COMPLIANCE
f=350MHz
=3.5V
V
GG
=50mW
P
in
8 6 4 2 0
345678910
8 6 4 2 0
345678910
DRAIN VOLTAGE V
f=400MHz
=3.5V
V
GG
=50mW
P
in
DRAIN VOLTAGE V
RA07M3340M
P
out
I
DD
(V)
DD
P
out
I
DD
(V)
DD
8
6
(A)
DD
4
2
DRAI N CURRENT I
0
8
6
(A)
DD
4
2
DRAI N CURR ENT I
0
OUTPUT POWER an d DRA IN CURRENT OUTPUT POWER and DRAIN CURRENT
12
10
(W)
out
8
versus GA TE VOLTAGE versus GATE VOLTAGE
f=330MHz
=7.2V
V
DD
=50mW
P
in
P
out
6
I
4
2
OUTPUT POWER P
DD
0
22.533.54 GATE VOLTAGE V
GG
(V)
6
5
(A)
4
DD
3
2
1
DRAI N CURRENT I
0
12
f=350MHz
=7.2V
V
10
(W)
out
DD
=50mW
P
in
8
P
out
6
4
2
OUTPUT POWER P
0
22.533.54 GATE VOLTAGE V
GG
(V)
OUTPUT POWER an d DRA IN CURRENT OUTPUT POWER and DRAIN CURRENT
versus GA TE VOLTAGE versus GATE VOLTAGE
f=380MHz
=7.2V
V
DD
P
=50mW
in
P
out
(W)
out
12
10
8
6
OUTP UT POWER P
4
2
I
DD
0
22.533.54 GATE VOLTAGE V
GG
(V)
6
5
(A)
4
DD
3
2
1
DRAI N CURRENT I
0
12
f=400MHz
=7.2V
V
10
(W)
out
DD
=50mW
P
in
8
P
out
6
4
2
OUTP UT POWER P
0
22.533.54 GATE VOLTAGE V
GG
(V)
6
5
(A)
4
DD
3
I
DD
2
1
DRAI N CURRENT I
0
6
5
(A)
4
DD
3
I
DD
2
1
DRAI N CURRENT I
0
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Page 5
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Silicon RF Power Semiconductors
RoHS COMPLIANCE
RA07M3340M
OUTLINE DRAWING
(mm)
RA07M3340M
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1 RF Input (P 2 Gate Voltage (V 3 Drain Voltage (V 4 RF Output (P
)
in
)
GG
)
DD
)
out
5 RF Ground (Case)
Page 6
Ω
TEST BLOCK DIAGRAM
Signal
Generator
Attenuator
amplifier
C1, C2: 4700pF, 22uF in parallel
EQUIVALENT CIRCUIT
1
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Power
Meter
Pre-
Attenuator
Directional
Coupler
2
ZG=50
1
C1 C2
- +
DC Power
Supply V
RoHS COMPLIANCE
2
GG
DUT
3
DC Power
Supply V
5
4
Z
+ -
DD
3
Silicon RF Power Semiconductors
RA07M3340M
Spectrum
Analyzer
=50Ω
Directional
Coupler
Attenuator
1 RF Input (P 2 Gate Voltage (V 3 Drain Voltage (V 4 RF Output (P 5 RF Ground (Case)
Power
Meter
)
in
)
GG
)
DD
)
out
4
5
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Page 7
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE
Silicon RF Power Semiconductors
RA07M3340M
RECOMMENDATIONS and APPLICATION INFORMATION: Construction:
This module consists of an alumina substrate soldered onto a copper flange. For mechanical protection, a plastic cap is attached with silicone. The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate, and coated with resin. Lines on the substrate (eventually inductors), chip capacitors, and resistors form the bias and matching circuits. Wire leads soldered onto the alumina substrate provide the DC and RF connection. Following conditions must be avoided: a) Bending forces on the alumina substrate (for example, by driving screws or from fast thermal changes) b) Mechanical stress on the wire leads (for example, by first soldering then driving screws or by thermal expansion) c) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichlorethylene) d) Frequent on/off switching that causes thermal expansion of the resin e) ESD, surge, overvoltage in combination with load VSWR, and oscillation
ESD:
This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required.
Mounting:
Heat sink flatness must be less than 50 µm (a heat sink that is not flat or particles between module and heat sink may cause the ceramic substrate in the module to crack by bending forces, either immediately when driving screws or later when thermal expansion forces are added). A thermal compound between module and heat sink is recommended for low thermal contact resistance and to reduce the bending stress on the ceramic substrate caused by the temperature difference to the heat sink. The module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board. M2.6 screws are recommended with a tightening torque of 1.8 to 3.0 kgf-cm.
Soldering and Defluxing:
This module is designed for manual soldering. The lead (terminal) must be soldered after the module is screwed onto the heat sink. The temperature of the lead (terminal) soldering should be lower than 350°C and shorter than 3 second. Ethyl Alcohol is recommend for removing flux. Trichloroethylene solvents must not be used (they may cause bubbles in the coating of the transistor chips which can lift off the bond wires).
Thermal Design of the Heat Sink:
=7W, VDD=7.2V and Pin=50mW each stage transistor operating conditions are:
At P
out
Stage
1st
P
in
(W)
0.05 2.0 4.5 0.55
P
out
(W)
R
th(ch-case)
(°C/W)
@ η
I
DD
=40%
T
(A)
V
DD
(V)
7.2
2nd 2.0 7.0 2.4 1.85
The channel temperatures of each stage transistor Tch = T
T
= T
ch1
= T
T
ch2
+ (7.2V x 0.55A – 2.0W + 0.05W) x 4.5°C/W = T
case
+ (7.2V x 1.85A - 7.0W + 2.0W) x 2.4°C/W = T
case
+ (VDD x IDD - P
case
case case
+ Pin) x R
out
+ 9.0 °C + 20.0 °C
th(ch-case)
are:
For long-term reliability, it is best to keep the module case temperature (T temperature T + P
) of the heat sink, including the contact resistance, is:
in
R
th(case-air)
=60°C and P
air
=7W, the required thermal resistance R
out
= (90°C - 60°C) / (7W/40% – 7W + 0.05W) = 2.84 °C/W
th (case-air)
) below 90°C. For an ambient
case
= ( T
case
- T
) / ( (P
air
/ ηT ) - P
out
When mounting the module with the thermal resistance of 2.84 °C/W, the channel temperature of each stage transistor is:
T
= T = T
+ 39.0 °C
air
+ 50.0 °C
air
ch1
T
ch2
The 175°C maximum rating for the channel temperature ensures application under derated conditions.
out
RA07M3340M
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Page 8
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE
Silicon RF Power Semiconductors
RA07M3340M
Output Power Control: Depending on linearity, the following two methods are recommended to control the output power:
a) Non-linear FM modulation:
By the gate voltage (V
GG
). When the gate voltage is close to zero, the RF input signal is attenuated up to 60 dB and only a small leakage current flows from the battery into the drain. Around V Around V
=2.5V, the output power and drain current increases substantially.
GG
=3V (typical) to VGG=3.5V (maximum), the nominal output power becomes available.
GG
b) Linear AM modulation:
By RF input power P
. The gate voltage is used to set the drain’s quiescent current for the required linearity.
in
Oscillation:
To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain, a 4.700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor. When an amplifier circuit around this module shows oscillation, the following may be checked: a) Do the bias decoupling capacitors have a low inductance pass to the case of the module? b) Is the load impedance Z c) Is the source impedance Z
=50Ω?
L
=50Ω?
G
ATTENTION:
1.High Temperature; This product might have a heat generation while operation,Please take notice that have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. At the near the product,do not place the combustible material that have possibilities to arise the fire.
2. Generation of High Frequency Power; This product generate a high frequency power. Please take notice that do not leakage the unnecessary electric wave and use this products without cause damage for human and property per normal operation.
3. Before use; Before use the product,Please design the equipment in consideration of the risk for human and electric wave obstacle for equipment.
PRECAUTION FOR THE USE OF MITSUBISHI SILICON RF POWER AMPLIFIER DEVICES:
1.The specifications of mention are not guarantee values in this data sheet. Please confirm additional details regarding operation of these products from the formal specification sheet. For copies of the formal specification sheets, please contact one of our sales offices.
2.RA series products (RF power amplifier modules) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. In particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements. Examples of critical communications elements would include transmitters for base station applications and fixed station applications that operate with long term continuous transmission and a higher on-off frequency during transmitting, especially for systems that may have a high impact to society.
3.RA series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore appropriate ESD precautions are required.
4.In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the case temperature for RA series products lower than 60deg/C under standard conditions, and less than 90deg/C under extreme conditions.
5.RA series products are designed to operate into a nominal load impedance of 50 ohms. Under the condition of operating into a severe high load VSWR approaching an open or short, an over load condition could occur. In the worst case there is risk for burn out of the transistors and burning of other parts including the substrate in the module.
6.The formal specification includes a guarantee against parasitic oscillation under a specified maximum load mismatch condition. The inspection for parasitic oscillation is performed on a sample basis on our manufacturing line. It is recommended that verification of no parasitic oscillation be performed at the completed equipment level also.
7.For specific precautions regarding assembly of these products into the equipment, please refer to the supplementary items in the specification sheet.
8.Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it’s original form.
9.For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page of this data sheet.
10. Please refer to the additional precautions in the formal specification sheet.
RA07M3340M
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Page 9
ELECTROSTATIC SENSITIVE DEVICE
any malfunction o
pp
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE
Silicon RF Power Semiconductors
RA07M3340M
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better
Keep safety first in your circuit designs !
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against
r mishap.
Notes regarding these materials
These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
-
semiconductor product best suited to the customer’s application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.
- Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party’s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
- All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including the Mitsubishi Semiconductor home page (http://www.mitsubishichips.com).
- When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein.
- Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
- The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials.
- If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the a
roved destination.
RA07M3340M
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