MITSUBISHI RA07M1317MSA User Manual
ELECTROSTATIC SENSITIVE DEVICE
2
1
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance ,
135-175MHz 6.7W 7.2V, 2 Stage Amp. For PORTABLE RADIO
Silicon RF Power Semiconductors
RA
RA07M1317
RARA
07M1317M
07M131707M1317
MSA
SA
MM
SASA
DESCRIPTION
The RA07M1317MSA is a 6.7-watt RF MOSFET Amplifier
Module for 7.2-volt portable radios that operate in the 135- to
175-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the
drain and the RF input signal attenuates up to 60 dB. The output
power and drain current increase as the gate voltage increases.
With a gate voltage around 2.5V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 3V (typical) and 3.5V (maximum). At
VGG=3.5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but
may also be used for linear modulation by setting the drain
quiescent current with the gate voltage and controlling the output
power with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD≅0 @ VDD=7.2V, VGG=0V)
• P
>6.7W @ VDD=7.2V, VGG=3.5V, Pin=20mW
out
• ηT>45% @ P
• Broadband Frequency Range: 135-175MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=3.5V
• Module Size: 30 x 9.6 x 5.3 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power
with the input power
=6W (VGG control), VDD=7.2V, Pin=20mW
out
BLOCK DIAGRAM
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (P
5 RF Ground (Case)
out
)
3
4
5
RoHS COMPLIANCE
• RA07M1317MSA-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER SUPPLY FORM
RA07M1317MSA-101
Antistatic tray,
50 modules/tray
RA07M1317MSA
1/9
30 Jun 2010
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MAXIMUM RATINGS
SYMBOL PARAMETER CONDITIONS RATING UNIT
VDD Drain Voltage VGG<3.5V 9.2 V
VGG Gate Voltage VDD<7.2V, Pin=0mW 4 V
Pin Input Power 30 mW
P
Output Power 10 W
out
T
case(OP)
T
The above parameters are independently guaranteed.
Operation Case Temperature Range
Storage Temperature Range -40 to +110 °C
stg
(T
=+25°C, unless otherwise specified)
case
f=135-175MHz,
ZG=ZL=50Ω
RoHS COMPLIANCE
Silicon RF Power Semiconductors
RA
RA07M1317
07M1317MMMMSA
RARA
07M131707M1317
-30 to +110 °C
SA
SASA
ELECTRICAL CHARACTERISTICS
(T
=+25°C, ZG=ZL=50Ω, unless otherwise specified)
case
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
f Frequency Range 135 - 175 MHz
P
Output Power
out
ηT
2fo 2nd Harmonic - - -25 dBc
ρin
IGG Gate Current
— Stability
— Load VSWR Tolerance
All parameters, conditions, ratings, and limits are subject to change without notice.
Total Efficiency 45 - - %
Input VSWR - - 4:1 —
VDD=7.2V,VGG=3.5V, Pin=20mW
P
=6W (VGG control),
out
VDD=7.2V,
Pin=20mW
VDD=4.0-9.2V, Pin=10-30mW, P
Load VSWR=4:1
VDD=9.2V, Pin=30mW, P
Load VSWR=20:1
=7W (VGG control),
out
<8W (VGG control),
out
6.7 - - W
- 1 - mA
No parasitic oscillation
No degradation or destroy —
—
RA07M1317MSA
30 Jun 2010
2/9
and INPUT VSWR versus FREQUENCY
OUTPUT POWER, POWER GAIN and
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
DRAIN CURRENT versus INPUT POWER
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
OUTPUT POWER and DRAIN CURRENT
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
versus DRAIN VOLTAGE
TYPICAL PERFORMANCE
OUTPUT POWER, TOTAL EFFICIENCY, 2nd, 3rd HARMONICS versus FREQUENCY
10
9
(W)
8
out
7
6
5
4
3
INPUT VSWR(-)
2
OUTPUT POWER P
1
0
130 140 150 160 170 180
40
Gp
38
36
(dBm)
out
34
32
30
28
26
POWER GAIN(dB)
24
22
OUTPUT POWER P
20
f=135MHz
VDD=7.2V
VGG=3.5V
-15 -10 -5 0 5 10 15 20
40
Gp
38
36
(dBm)
out
34
32
30
28
26
POWER GAIN(dB)
24
22
OUTPUT POWER P
20
-15 -10 -5 0 5 10 15 20
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
(T
=+25°C, ZG=ZL=50Ω, unless otherwise specified)
case
100
P
out
ηt
ρin
FREQUENCY f(MHz)
I
DD
INPUT POWER PIN(dBm)
I
DD
f=175MHz
VDD=7.2V
VGG=3.5V
INPUT POWER PIN(dBm)
VDD=7.2V
VGG=3.5V
Pin=20mW
P
P
90
80
70
60
50
40
30
20
10
0
5.0
out
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
5.0
out
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Silicon RF Power Semiconductors
RoHS COMPLIANCE
-20
-25
-30
-35
-40
-45
-50
HARMONICS(dBc)
-55
rd
,3
-60
nd
2
TOTAL EFFICIENCY ηT(%)
(A)
DD
DRAIN CURRENT I
(A)
DD
DRAIN CURRENT I
-65
-70
(dBm)
out
POWER GAIN(dB)
OUTPUT POWER P
rd
3
130 140 150 160 170 180
40
Gp
38
36
34
32
30
28
26
24
22
20
-15 -10 -5 0 5 10 15 20
f=165MHz
VDD=7.2V
VGG=3.5V
INPUT POWER PIN(dBm)
RA
RA07M1317
07M1317MMMMSA
RARA
07M131707M1317
nd
2
FREQUENCY f(MHz)
I
DD
VDD=7.2V
VGG=3.5V
Pin=20mW
P
out
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
SA
SASA
(A)
DD
DRAIN CURRENT I
16
f=135MHz
14
PIN=20mW
(W)
VGG=3.5V
12
out
10
8
6
4
OUTPUT POWER P
2
0
0 2 4 6 8 10
RA07M1317MSA
I
DD
DRAIN VOLTAGE VDD(V)
4.0
3.5
P
out
3.0
2.5
2.0
1.5
1.0
0.5
0.0
(A)
DD
DRAIN CURRENT I
16
f=165MHz
14
PIN=20mW
(W)
VGG=3.5V
12
out
10
8
6
4
OUTPUT POWER P
2
0
0 2 4 6 8 10
I
DD
DRAIN VOLTAGE VDD(V)
4.0
3.5
P
out
3.0
2.5
2.0
1.5
1.0
0.5
0.0
(A)
DD
DRAIN CURRENT I
30 Jun 2010
3/9
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