MITSUBISHI RA07M1317M User Manual
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA07M1317M
RoHS Compliance , 135-175MHz 6.5W 7.2V, 2 Stage Amp. For PORTABLE RADIO
DESCRIPTION
The RA07M1317M is a 6.5-watt RF MOSFET Amplifier
Module for 7.2-volt portable radios that operate in the 135- to
175-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (V
=0V), only a small leakage current flows into the
GG
drain and the RF input signal attenuates up to 60 dB. The output
power and drain current increase as the gate voltage increases.
With a gate voltage around 2.5V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 3V (typical) and 3.5V (maximum). At
=3.5V, the typical gate current is 1 mA.
V
GG
This module is designed for non-linear FM modulation, but
may also be used for linear modulation by setting the drain
quiescent current with the gate voltage and controlling the output
power with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(I
≅0 @ VDD=7.2V, VGG=0V)
DD
• P
>6.5W @ VDD=7.2V, VGG=3.5V, Pin=20mW
out
• η
>45% @ P
T
=6W (VGG control), VDD=7.2V, Pin=20mW
out
• Broadband Frequency Range: 135-175MHz
• Low-Power Control Current I
=1mA (typ) at VGG=3.5V
GG
• Module Size: 30 x 10 x 5.4 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power
with the input power
BLOCK DIAGRAM
2
1
1 RF Input (Pin)
2 Gate Voltage (V
3 Drain Voltage (V
4 RF Output (P
5 RF Ground (Case)
out
GG
)
PACKAGE CODE: H46S
3
), Power Control
), Battery
DD
4
5
RoHS COMPLIANCE
• RA07M1317M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER SUPPLY FORM
RA07M1317M-101
Antistatic tray,
50 modules/tray
RA07M1317M
1/9
30 Jun 2010
Silicon RF Power Semiconductors
MAXIMUM RATINGS
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
(T
=+25°C, unless otherwise specified)
case
RoHS COMPLIANCE RA07M1317M
SYMBOL PARAMETER CONDITIONS RATING UNIT
VDD Drain Voltage VGG<3.5V 9.2 V
VGG Gate Voltage VDD<7.2V, Pin=0mW 4 V
Pin Input Power 30 mW
P
Output Power 10 W
out
T
Operation Case Temperature Range
case(OP)
T
Storage Temperature Range -40 to +110 °C
stg
f=135-175MHz,
ZG=ZL=50Ω
-30 to +90 °C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS
(T
=+25°C, ZG=ZL=50Ω, unless otherwise specified)
case
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
f Frequency Range 135 - 175 MHz
P
Output Power
out
η
Total Efficiency 45 - - %
T
2fo 2nd Harmonic - - -25 dBc
ρ
Input VSWR - - 4:1 —
in
=7.2V,VGG=3.5V, Pin=20mW
V
DD
P
=6W (VGG control),
out
VDD=7.2V,
=20mW
P
in
IGG Gate Current
— Stability
— Load VSWR Tolerance
=4.0-9.2V, Pin=10-30mW, P
V
DD
Load VSWR=4:1
=9.2V, Pin=20mW, P
V
DD
Load VSWR=20:1
out
<8W (VGG control),
out
=7W (VGG control),
All parameters, conditions, ratings, and limits are subject to change without notice.
6.5 - - W
- 1 - mA
No parasitic oscillation —
No degradation or destroy —
RA07M1317M
2/9
30 Jun 2010
TYPICAL PERFORMANCE
OUTPUT POW ER, TOTAL E FFICIENCY, 2nd, 3rd HARMONICS versus F RE QUENCY
and INPUT VSWR versus FREQUENCY
10
9
8
(W)
(-)
out
7
in
ρ
6
5
4
3
INPUT VSWR
2
OUTPUT POWER P
1
0
125 135 145 155 165 175 185
@P
η
T
@P
=6W
ρ
out
in
FRE Q UENCY f (MHz)
OUTPUT POW ER, POWER GAIN and OUTPUT POW ER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER DRAIN CURRENT versus INPUT POWER
50
Gp
40
(dBm)
out
30
20
I
10
POWER GAIN Gp (dB)
OUTP UT POWER P
0
-15 -10 -5 0 5 10 15 20
DD
INPUT POWER P
OUTPUT POW ER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
50
(dBm)
out
Gp
40
30
20
I
POWER GAIN Gp (dB)
10
OUTP UT POWER P
0
-15 -10 -5 0 5 10 15 20
DD
INPUT POWER P
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
(T
=+25°C, ZG=ZL=50Ω, unless otherwise specified)
case
100
=3.5V
@V
P
GG
out
=6W
out
VDD=7.2V
=20mW
P
in
P
out
f=135MHz
=7.2V
V
DD
=3.5V
V
GG
(dBm)
in
P
out
f=175MHz
V
DD
V
GG
(dBm)
in
=7.2V
=3.5V
80
(%)
T
60
40
20
0
TOTAL EFFICIENCY
5
(A)
4
DD
3
2
1
DRAI N CURRE NT I
0
5
4
(A)
DD
3
2
1
DRAI N CURRENT I
0
Silicon RF Power Semiconductors
RoHS COMPLIANCE RA07M1317M
-20
nd
@P
=6W
2
-30
η
-40
-50
HARMO NICS (dBc)
-60
-70
125 135 145 155 165 175 185
50
40
(dBm)
out
30
20
10
POWER GAIN Gp (dB)
OUTP UT POWER P
0
-15 -10 -5 0 5 10 15 20
out
rd
@P
=6W
3
out
FREQ UE NCY f (MHz )
Gp
I
DD
INPUT POWER P
(dBm)
in
VDD=7.2V
=20m W
P
in
P
f=165MHz
V
DD
V
GG
out
=7.2V
=3.5V
5
4
(A)
DD
I
3
2
1
DRAI N CURRENT
0
RA07M1317M
3/9
30 Jun 2010
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