MITSUBISHI RA07M0608M User Manual

ELECTROSTATIC SENSITIVE DEVICE
2
1
OBSERVE HANDLING PRECAUTIONS
Silicon RF Power Semiconductors
RA
RA07M0608
RARA
07M0608M
07M060807M0608
M
MM
RoHS Compliance ,
DESCRIPTION
The RA07M0608M is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 66- to 88-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD≅0 @ VDD=7.2V, VGG=0V)
• P
>7W @ VDD=7.2V, VGG=5V, Pin=30mW
out
ηT>45% @ P
• Broadband Frequency Range: 66-88MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 30 x 10 x 5.4 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power with the input power
=6W (VGG control), VDD=7.2V, Pin=30mW
out
66-88MHz 7W 7.2V, 2 Stage Amp. For PORTABLE RADIO
BLOCK DIAGRAM
1 RF Input (Pin) 2 Gate Voltage (VGG), Power Control 3 Drain Voltage (VDD), Battery 4 RF Output (P 5 RF Ground (Case)
)
out
PACKAGE CODE: H46S
3
4
5
RoHS COMPLIANCE
• RA07M0608M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts. How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER SUPPLY FORM
RA07M0608M-101
Antistatic tray,
50 modules/tray
RA07M0608M
30 Jun 2010
1/9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Silicon RF Power Semiconductors
RoHS COMPLIANCE
RA
RA07M0608
07M0608MMMM
RARA
07M060807M0608
MAXIMUM RATINGS
SYMBOL PARAMETER CONDITIONS RATING UNIT
VDD Drain Voltage VGG=0V, Pin=0W 12 V VDD Drain Voltage VGG<5V 9.2 V VGG Gate Voltage VDD<7.2V, Pin<30mW 5.5 V
Pin Input Power 50 mW
P
Output Power 10 W
out
T
case(OP)
T
The above parameters are independently guaranteed.
Operation Case Temperature Range
Storage Temperature Range -40 to +110 °C
stg
ELECTRICAL CHARACTERISTICS
(T
=+25°C, unless otherwise specified)
case
(T
=+25°C, ZG=ZL=50, unless otherwise specified)
case
f=66-88MHz, ZG=ZL=50
-30 to +90 °C
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
f Frequency Range 66 - 88 MHz
P
Output Power
out
ηT
2fo 2nd Harmonic - - -18 dBc
ρin
IGG Gate Current
Stability
Load VSWR Tolerance
Total Efficiency 45 - - %
Input VSWR - - 4:1
VDD=7.2V,VGG=5V, Pin=30mW
P
=6W (VGG control),
out
VDD=7.2V, Pin=30mW
VDD=6.0-9.2V, Pin=15-50mW, P IDD<3A, Load VSWR=4:1
VDD=9.2V, Pin=30mW, P Load VSWR=20:1
=7W (VGG control),
out
<8W (VGG control),
out
7 - - W
- 1 - mA
No parasitic oscillation
No degradation or destroy —
NOTE1: All parameters, conditions, ratings, and limits are subject to change without notice. NOTE2: This device may be destroyed in a few minutes when output power from module is more than 10W. Therefore, please keep the output power of device less than 10W even operating under the high load VSWR conditions.
RA07M0608M
30 Jun 2010
2/9
and INPUT VSWR versus FREQUENCY
OUTPUT POWER, POWER GAIN and
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
DRAIN CURRENT versus INPUT POWER
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
OUTPUT POWER and DRAIN CURRENT
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
versus DRAIN VOLTAGE
TYPICAL PERFORMANCE
OUTPUT POWER, TOTAL EFFICIENCY, 2nd, 3rd HARMONICS versus FREQUENCY
14 12
(W)
out
(-)
in
10
ρ
8 6 4
INPUT VSWR
2
OUTPUT POWER P
0
60 65 70 75 80 85 90
FREQUENCY f(MHz)
P
out
ηηηη
@P
T
ρρρρ
@P
in
out
50
40
30
(dBm)
out
20
P
OUTPUT POWER
10
POWER GAIN Gp(dB)
0
-15 -10 -5 0 5 10 15 20
Gp
I
INPUT POWER Pin(dBm)
50
40
30
(dBm)
out
20
P
OUTPUT POWER
10
POWER GAIN Gp(dB)
0
-15 -10 -5 0 5 10 15 20
Gp
INPUT POWER Pin(dBm)
RA07M0608M
14
f=66MHz,
12
(W)
VGG=5V,
out
Pin=30mW
10
8 6 4 2
OUTPUT POWER P
0
2 3 4 5 6 7 8 9 10
DRAIN VOLTAGE VDD(V)
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
(T
=+25°C, ZG=ZL=50, unless otherwise specified)
case
140
P
out
f=66MHz, VDD=7.2V, VGG=5V
P
out
f=88MHz, VDD=7.2V, VGG=5V
I
DD
120 100 80 60 40 20 0
(%)
T
η
TOTAL EFFICIENCY
5
(A)
4
DD
3
2
1
DRAIN CURRENT I
0
5
(A)
4
DD
3
2
1
DRAIN CURRENT I
0
7 6
(A)
5
DD
4 3 2 1
DRAIN CURRENT I
0
@VGG=5V
=6W
out
=6W
DD
I
DD
VDD=7.2V Pin=30mW
P
out
3/9
Silicon RF Power Semiconductors
RoHS COMPLIANCE
-10
-20
nd
2
-30
-40
HARMONICS (dBc)
-50
-60 60 65 70 75 80 85 90
50
40
30
(dBm)
out
20
P
OUTPUT POWER
10
POWER GAIN Gp(dB)
0
-15 -10 -5 0 5 10 15 20
14 12
(W)
out
10
8 6 4 2
OUTPUT POWER P
0
2 3 4 5 6 7 8 9 10
FREQUENCY f(MHz)
Gp
I
DD
INPUT POWER Pin(dBm)
f=77MHz, VGG=5V, Pin=30mW
DRAIN VOLTAGE VDD(V)
@P
P
RA
RA07M0608
07M0608MMMM
RARA
07M060807M0608
VDD=7.2V Pin=30mW
=6W
out
rd
3
@P
=6W
out
5
P
out
f=77MHz, VDD=7.2V, VGG=5V
I
DD
out
(A)
4
DD
I
3
2
1
DRAIN CURRENT
0
7 6
(A)
5
DD
4 3 2 1
DRAIN CURRENT I
0
30 Jun 2010
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