ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Silicon RF Power Semiconductors
RA
RA07H4452
RARA
07H4452M
07H445207H4452
M
MM
RoHS Compliance ,
DESCRIPTION
The RA07H4452M is a 7-watt RF MOSFET Amplifier Module
for 12.5-volt portable radios that operate in the 440- to 520-MHz
range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the
drain and the RF input signal attenuates up to 60 dB. The output
power and drain current increase as the gate voltage increases.
With a gate voltage around 2.5V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 3V (typical) and 3.5V (maximum). At
VGG=3.5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD≅0 @ VDD=12.5V, VGG=0V)
• P
>7W @ VDD=12.5V, VGG=3.5V, Pin=20mW
out
• ηT>40% @ P
• Broadband Frequency Range: 440-520MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=3.5V
• Module Size: 30 x 10 x 5.4 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power
with the input power
=7W (VGG control), VDD=12.5V, Pin=20mW
out
440-520MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO
BLOCK DIAGRAM
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (P
5 RF Ground (Case)
)
out
PACKAGE CODE: H46S
3
4
5
RoHS COMPLIANCE
• RA07H4452M-101 is a is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER SUPPLY FORM
RA07H4452M-101
Antistatic tray,
50 modules/tray
RA07H4452M
28 Jun 2010
1/9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MAXIMUM RATINGS
SYMBOL PARAMETER CONDITIONS RATING UNIT
VDD Drain Voltage VGG=0V, Pin=0W 16 V
VDD Drain Voltage VGG<3.5V 13.2 V
VGG Gate Voltage VDD<12.5V, Pin<20mW 4 V
Pin Input Power 30 mW
P
Output Power 10 W
out
T
case(OP)
T
The above parameters are independently guaranteed.
Operation Case Temperature Range
Storage Temperature Range -40 to +110 °C
stg
(T
=+25°C, unless otherwise specified)
case
f=440-520MHz,
ZG=ZL=50Ω
RoHS COMPLIANCE
Silicon RF Power Semiconductors
RA
RA07H4452
07H4452MMMM
RARA
07H445207H4452
-30 to +90 °C
ELECTRICAL CHARACTERISTICS
(T
=+25°C, ZG=ZL=50Ω, unless otherwise specified)
case
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
f Frequency Range 440 - 520 MHz
P
Output Power
out
ηT
2fo 2nd Harmonic - - -25 dBc
ρin
IGG Gate Current
— Stability
— Load VSWR Tolerance
All parameters, conditions, ratings, and limits are subject to change without notice.
Total Efficiency 40 - - %
Input VSWR - - 4:1 —
VDD=12.5V,VGG=3.5V, Pin=20mW
P
=7W (VGG control),
out
VDD=12.5V,
Pin=20mW
VDD=7.2-13.2V, Pin=10-30mW, P
Load VSWR=4:1
VDD=13.2V, Pin=20mW, P
Load VSWR=20:1
=7.0W (VGG control),
out
<8W (VGG control)
out
7 - - W
- 1 - mA
No parasitic oscillation
No degradation or destroy —
—
RA07H4452M
28 Jun 2010
2/9
and INPUT VSWR versus FREQUENCY
OUTPUT POWER, POWER GAIN and
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
DRAIN CURRENT versus INPUT POWER
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
OUTPUT POWER and DRAIN CURRENT
OUTPUT POWER and DRAIN CURRENT
TYPICAL PERFORMANCE
OUTPUT POWER, TOTAL EFFICIENCY, 2nd, 3rd HARMONICS versus FREQUENCY
14
12
(W)
out
(-)
in
10
ρ
8
6
4
INPUT VSWR
2
OUTPUT POWER P
0
430 450 470 490 510 530
FREQUENCY f(MHz)
P
ηηηη
@P
T
ρρρρ
@P
=7W
in
out
50
40
30
(dBm)
out
20
P
OUTPUT POWER
10
POWER GAIN Gp(dB)
Gp
0
-15 -10 -5 0 5 10 15 20
INPUT POWER Pin(dBm)
50
40
30
(dBm)
out
20
P
OUTPUT POWER
10
POWER GAIN Gp(dB)
Gp
0
-15 -10 -5 0 5 10 15 20
INPUT POWER Pin(dBm)
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
(T
=+25°C, ZG=ZL=50Ω, unless otherwise specified)
case
140
@VGG=3.5V
out
=7W
out
VDD=12.5V
Pin=20mW
P
I
DD
f=440MHz,
VDD=12.5V,
VGG=3.5V
I
DD
f=520MHz,
VDD=12.5V,
VGG=3.5V
120
100
80
60
40
20
0
out
P
out
(%)
T
η
TOTAL EFFICIENCY
5
(A)
4
DD
3
2
1
DRAIN CURRENT I
0
5
(A)
4
DD
3
2
1
DRAIN CURRENT I
0
Silicon RF Power Semiconductors
RoHS COMPLIANCE
-20
-30
-40
-50
HARMONICS (dBc)
-60
-70
430 450 470 490 510 530
50
40
30
(dBm)
out
20
P
OUTPUT POWER
10
POWER GAIN Gp(dB)
0
nd
2
@P
=7W
out
FREQUENCY f(MHz)
Gp
I
DD
-15 -10 -5 0 5 10 15 20
INPUT POWER Pin(dBm)
VDD=12.5V
Pin=20mW
rd
3
@P
=7W
out
RA
RA07H4452
07H4452MMMM
RARA
07H445207H4452
5
P
out
f=480MHz,
VDD=12.5V,
VGG=3.5V
(A)
4
DD
I
3
2
1
DRAIN CURRENT
0
15
f=440MHz,
(W)
VGG=3.5V,
12
out
Pin=20mW
9
6
3
OUTPUT POWER P
0
2 4 6 8 10 12
DRAIN VOLTAGE VDD(V)
RA07H4452M
5
4
(A)
P
out
I
DD
DD
3
2
1
DRAIN CURRENT I
0
15
f=480MHz,
(W)
VGG=3.5V,
12
out
Pin=20mW
9
6
3
OUTPUT POWER P
0
2 4 6 8 10 12
DRAIN VOLTAGE VDD(V)
P
out
I
DD
5
4
3
2
1
0
(A)
DD
DRAIN CURRENT I
28 Jun 2010
3/9