MITSUBISHI RA07H3340MM User Manual

ELECTROSTATIC SENSITIVE DEVICE

2

1

OBSERVE HANDLING PRECAUTIONS

Silicon RF Power Semiconductors

RA

RA07H3340

RARA

07H3340M

07H334007H3340

M

MM

RoHS Compliance ,

DESCRIPTION

The RA07H3340M is a 7-watt RF MOSFET Amplifier Module
for 12.5-volt portable radios that operate in the 330- to 400-MHz
range.

The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the
drain and the RF input signal attenuates up to 60 dB. The output
power and drain current increase as the gate voltage increases.
With a gate voltage around 2.5V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 3V (typical) and 3.5V (maximum). At
VGG=3.5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.

FEATURES

• Enhancement-Mode MOSFET Transistors

(IDD≅0 @ VDD=12.5V, VGG=0V)

• P

>7W @ VDD=12.5V, VGG=3.5V, Pin=20mW

out

• ηT>40% @ P

• Broadband Frequency Range: 330-400MHz

• Low-Power Control Current IGG=1mA (typ) at VGG=3.5V

• Module Size: 30 x 10 x 5.4 mm

• Linear operation is possible by setting the quiescent drain

current with the gate voltage and controlling the output power
with the input power

=7W (VGG control), VDD=12.5V, Pin=20mW

out

330-400MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO

BLOCK DIAGRAM

1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (P
5 RF Ground (Case)

)

out

PACKAGE CODE: H46S

3

4

5

RoHS COMPLIANT

• RA07H3340M-101 is a RoHS compliance products.

• RoHS compliance is indicate by the letter “G” after the Lot

Marking.

• This product include the lead in the Glass of electronic parts and the

lead in electronic Ceramic parts.
How ever, it applicable to the following exceptions of RoHS Directions.

1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.

2.Lead in electronic Ceramic parts.

ORDERING INFORMATION:

ORDER NUMBER SUPPLY FORM
RA07H3340M-101

Antistatic tray,

50 modules/tray

RA07H3340M

28 Jun 2010

1/9

ELECTROSTATIC SENSITIVE DEVICE

,

OBSERVE HANDLING PRECAUTIONS

MAXIMUM RATINGS

SYMBOL PARAMETER CONDITIONS RATING UNIT

VDD Drain Voltage VGG=0V, Pin=0W 16 V
VDD Drain Voltage VGG<3.5V 13.2 V
VGG Gate Voltage VDD <12.5V, Pin<20mW 4 V

Pin Input Power 30 mW

P

Output Power 10 W

out

T

case(OP)

T

The above parameters are independently guaranteed.

Operation Case Temperature Range

Storage Temperature Range -40 to +110 °C

stg

(T

=+25°C, unless otherwise specified)

case

f=330-400MHz, VGG<3.5V
ZG=ZL=50Ω

RoHS COMPLIANT

Silicon RF Power Semiconductors

RA

RA07H3340

07H3340MMMM

RARA

07H334007H3340

-30 to +90 °C

ELECTRICAL CHARACTERISTICS

(T

=+25°C, ZG=ZL=50Ω, unless otherwise specified)

case

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

f Frequency Range 330 - 400 MHz

P

Output Power

out

ηT

2fo 2nd Harmonic - - -25 dBc

ρin

IGG Gate Current

— Stability

— Load VSWR Tolerance

All parameters, conditions, ratings, and limits are subject to change without notice.

Total Efficiency 40 - - %

Input VSWR - - 4:1 —

VDD=12.5V,VGG=3.5V, Pin=20mW

P

=7W (VGG control),

out

VDD=12.5V,
Pin=20mW

VDD=7.2-13.2V, Pin=10-30mW, P
Load VSWR=4:1

VDD=13.2V, Pin=20mW, P
Load VSWR=20:1

=7.0W (VGG control),

out

<8W (VGG control)

out

7 - - W

- 1 - mA

No parasitic oscillation

No degradation or destroy —

—

RA07H3340M

28 Jun 2010

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and INPUT VSWR versus FREQUENCY

OUTPUT POWER, POWER GAIN and

OUTPUT POWER, POWER GAIN and

DRAIN CURRENT versus INPUT POWER

DRAIN CURRENT versus INPUT POWER

OUTPUT POWER, POWER GAIN and

DRAIN CURRENT versus INPUT POWER

OUTPUT POWER and DRAIN CURRENT

OUTPUT POWER and DRAIN CURRENT

versus DRAIN VOLTAGE

versus DRAIN VOLTAGE

TYPICAL PERFORMANCE

OUTPUT POWER, TOTAL EFFICIENCY, 2nd, 3rd HARMONICS versus FREQUENCY

14
12

(W)

out

(-)

in

10

ρ

8
6
4

INPUT VSWR

2

OUTPUT POWER P

0

320 330 340 350 360 370 380 390 400 410

FREQUENCY f(MHz)

P

ηηηη

ρρρρ

@P

=7W

in

out

50

Gp

40

30

(dBm)

out

20

P

OUTPUT POWER

10

POWER GAIN Gp(dB)

0

-15 -10 -5 0 5 10 15 20

I

DD

INPUT POWER Pin(dBm)

50

40

30

(dBm)

out

20

P

OUTPUT POWER

10

POWER GAIN Gp(dB)

0

Gp

-15 -10 -5 0 5 10 15 20
INPUT POWER Pin(dBm)

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

(T

=+25°C, ZG=ZL=50Ω, unless otherwise specified)

case

140

@VGG=3.5V

out

@P

=7W

T

out

VDD=12.5V
Pin=20mW

P

f=330MHz,
VDD=12.5V,
VGG=3.5V

I

DD

f=400MHz,
VDD=12.5V,
VGG=3.5V

120
100
80
60
40
20
0

out

P

out

(%)

T

η

TOTAL EFFICIENCY

5

(A)

4

DD

3

2

1

DRAIN CURRENT I

0

5

(A)

4

DD

3

2

1

DRAIN CURRENT I

0

Silicon RF Power Semiconductors

RoHS COMPLIANT

-20

-30

nd

2

@P

=7W

-40

-50

HARMONICS (dBc)

-60

-70
320 330 340 350 360 370 380 390 400 410

50

40

30

(dBm)

out

20

P

OUTPUT POWER

10

POWER GAIN Gp(dB)

0

-15 -10 -5 0 5 10 15 20

out

FREQUENCY f(MHz)

Gp

I

DD

INPUT POWER Pin(dBm)

VDD=12.5V
Pin=20mW

rd

3

@P

=7W

out

RA

RA07H3340

07H3340MMMM

RARA

07H334007H3340

5

P

out

f=360MHz,
VDD=12.5V,
VGG=3.5V

(A)

4

DD

I

3

2

1

DRAIN CURRENT

0

20

(W)

OUTPUT POWER P

f=330MHz,
VGG=3.5V,

out

15

Pin=20mW

10

5

0

2 4 6 8 10 12

DRAIN VOLTAGE VDD(V)

RA07H3340M

4

(A)

3

DD

P

out

I

DD

2

1

DRAIN CURRENT I

0

20

f=360MHz,

(W)

VGG=3.5V,

out

15

Pin=20mW

10

5

OUTPUT POWER P

0

2 4 6 8 10 12

DRAIN VOLTAGE VDD(V)

4

(A)

3

DD

P

out

I

DD

2

1

DRAIN CURRENT I

0

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