MITSUBISHI RA07H0608M User Manual

ELECTROSTATIC SENSITIVE DEVICE

2

1

OBSERVE HANDLING PRECAUTIONS

RoHS Compliance ,68-88MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO

Silicon RF Power Semiconductors

RA

RA07H0608

RARA

07H0608M

07H060807H0608

M

MM

DESCRIPTION

The RA07H0608M is a 7-watt RF MOSFET Amplifier Module
for 12.5-volt portable radios that operate in the 68- to 88-MHz
range.

The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the
drain and the RF input signal attenuates up to 60 dB. The output
power and drain current increase as the gate voltage increases.
With a gate voltage around 4V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 4.5V (typical) and 5V (maximum). At
VGG=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.

FEATURES

• Enhancement-Mode MOSFET Transistors

(IDD≅0 @ VDD=12.5V, VGG=0V)

• P

>7W @ VDD=12.5V, VGG=5V, Pin=30mW

out

• ηT>38% @ P

• Broadband Frequency Range: 68-88MHz

• Low-Power Control Current IGG=1mA (typ) at VGG=5V

• Module Size: 30 x 10 x 5.4 mm

• Linear operation is possible by setting the quiescent drain

current with the gate voltage and controlling the output power
with the input power

=7W (VGG control), VDD=12.5V, Pin=30mW

out

BLOCK DIAGRAM

1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (P
5 RF Ground (Case)

)

out

PACKAGE CODE: H46S

3

4

5

RoHS COMPLIANT

• RA07H0608M-101 is a RoHS compliant products.

• RoHS compliance is indicate by the letter “G” after the Lot

Marking.

• This product include the lead in the Glass of electronic parts and the

lead in electronic Ceramic parts.
How ever, it applicable to the following exceptions of RoHS Directions.

1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.

2.Lead in electronic Ceramic parts.

ORDERING INFORMATION:

ORDER NUMBER SUPPLY FORM
RA07H0608M-101

Antistatic tray,

50 modules/tray

RA07H0608M

28 Jun 2010

1/9

ELECTROSTATIC SENSITIVE DEVICE

,

OBSERVE HANDLING PRECAUTIONS

Silicon RF Power Semiconductors

RoHS COMPLIANT

RA

RA07H0608

07H0608MMMM

RARA

07H060807H0608

MAXIMUM RATINGS

SYMBOL PARAMETER CONDITIONS RATING UNIT

VDD Drain Voltage VGG=0V, Pin=0W 16 V
VDD Drain Voltage VGG<5V 13.2 V
VGG Gate Voltage VDD<12.5V, Pin<30mW 6 V

Pin Input Power 50 mW

P

Output Power 10 W

out

T

case(OP)

T

The above parameters are independently guaranteed.

Operation Case Temperature Range

Storage Temperature Range -40 to +110 °C

stg

ELECTRICAL CHARACTERISTICS

(T

=+25°C, unless otherwise specified)

case

(T

=+25°C, ZG=ZL=50Ω, unless otherwise specified)

case

f=68-88MHz,
ZG=ZL=50Ω

-30 to +90 °C

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

f Frequency Range 68 - 88 MHz

P

Output Power

out

ηT

2fo 2nd Harmonic - - -18 dBc

ρin

IGG Gate Current

— Stability

— Load VSWR Tolerance

Total Efficiency 38 - - %

Input VSWR - - 4:1 —

VDD=12.5V,VGG=5V, Pin=30mW

P

=7W (VGG control),

out

VDD=12.5V,
Pin=30mW

VDD=7.2-13.2V, Pin=15-50mW, P
Load VSWR=4:1

VDD=13.2V, Pin=30mW, P
Load VSWR=20:1

=7W (VGG control),

out

<8W (VGG control)

out

7 - - W

- 1 - mA

No parasitic oscillation

No degradation or destroy —

—

All parameters, conditions, ratings, and limits are subject to change without notice.

RA07H0608M

28 Jun 2010

2/9

and INPUT VSWR versus FREQUENCY

OUTPUT POWER, POWER GAIN and

OUTPUT POWER, POWER GAIN and

DRAIN CURRENT versus INPUT POWER

DRAIN CURRENT versus INPUT POWER

OUTPUT POWER, POWER GAIN and

DRAIN CURRENT versus INPUT POWER

OUTPUT POWER and DRAIN CURRENT

OUTPUT POWER and DRAIN CURRENT

versus DRAIN VOLTAGE

versus DRAIN VOLTAGE

TYPICAL PERFORMANCE

OUTPUT POWER, TOTAL EFFICIENCY, 2nd, 3rd HARMONICS versus FREQUENCY

14
12

(W)

out

(-)

in

10

ρ

P

out

8

ηηηη

@P

6

T

4

INPUT VSWR

2

OUTPUT POWER P

ρρρρ

@P

in

out

0

60 65 70 75 80 85 90

FREQUENCY f(MHz)

50

40

Gp

30

(dBm)

out

20

P

OUTPUT POWER

10

POWER GAIN Gp(dB)

0

-15 -10 -5 0 5 10 15 20
INPUT POWER Pin(dBm)

50

40

30

(dBm)

out

20

P

OUTPUT POWER

10

POWER GAIN Gp(dB)

0

-15 -10 -5 0 5 10 15 20

Gp

INPUT POWER Pin(dBm)

20

f=68MHz,

(W)

VGG=5V,

out

15

Pin=30mW

10

RA07H0608M

5

OUTPUT POWER P

0

2 4 6 8 10 12

DRAIN VOLTAGE VDD(V)

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

(T

=+25°C, ZG=ZL=50Ω, unless otherwise specified)

case

140

@VGG=5V

120
100
80

=7W

=7W

out

VDD=12.5V
Pin=30mW

60
40
20
0

(%)

T

η

TOTAL EFFICIENCY

5

P

out

(A)

4

DD

3

2

I

DD

I

DD

f=68MHz,
VDD=12.5V,
VGG=5V

P

out

f=88MHz,
VDD=12.5V,
VGG=5V

P

out

I

DD

1

DRAIN CURRENT I

0

5

(A)

4

DD

3

2

1

DRAIN CURRENT I

0

4

(A)

3

DD

2

1

DRAIN CURRENT I

0

3/9

RoHS COMPLIANT

-10

-20

nd

2

-30

@P

-40

HARMONICS (dBc)

-50

-60
60 65 70 75 80 85 90

FREQUENCY f(MHz)

50

40

Gp

30

(dBm)

out

20

P

I

OUTPUT POWER

10

POWER GAIN Gp(dB)

DD

0

-15 -10 -5 0 5 10 15 20
INPUT POWER Pin(dBm)

20

f=78MHz,

(W)

VGG=5V,

out

15

Pin=30mW

10

5

OUTPUT POWER P

0

2 4 6 8 10 12

DRAIN VOLTAGE VDD(V)

Silicon RF Power Semiconductors

RA

RA07H0608

07H0608MMMM

RARA

07H060807H0608

VDD=12.5V
Pin=30mW

=7W

out

rd

3

@P

=7W

out

5

P

out

(A)

4

DD

I

3

2

P

out

I

f=78MHz,
VDD=12.5V,
VGG=5V

DD

4

3

2

1

0

1

DRAIN CURRENT

0

(A)

DD

DRAIN CURRENT I

28 Jun 2010