MITSUBISHI RA06H8285M User Manual
< Silicon RF Power Modules >
BLOCK
DIAGRAM
RA06H8285M
RoHS Compliance, 820-851MHz 6W 12.5V, 3 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA06H8285M is a 6-watt RF MOSFETAmplifier Module for
12.5-volt mobile radios that operate in the 820- to 851-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the drain
and the RF input signal attenuates up to 60 dB. The output power
and drain current increase as the gate voltage increases. With a
gate voltage around 4V (minimum), output power and drain
current increases substantially. The nominal output power
becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V,
the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD0 @ VDD=12.5V, VGG=0V)
• P
>6W, T>35% @ VDD=12.5V, VGG=5V, Pin=1mW
out
• Broadband Frequency Range: 820-851MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 60.5 x 14 x 6.4 mm
• Linear operation is possible by setting the quiescent drain current with
the gate voltage and controlling the output power with the input power
1
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (P
5 RF Ground (Case)
2
)
out
PACKAGE CODE: H11S
3
4
5
RoHS COMPLIANCE
• RA06H8285M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in
electronic Ceramic parts.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent
tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER SUPPLYFORM
RA06H8285M-101
Antistatic tray,
20 modules/tray
Publication Date : Oct．2011
1
< Silicon RF Power Modules >
RA06H8285M
RoHS Compliance, 820-851MHz 6W 12.5V, 3 Stage Amp. For MOBILE RADIO
MAXIMUM RATINGS
(T
=+25°C, unless otherwise specified)
case
SYMBOL PARAMETER CONDITIONS RATING UNIT
V
V
P
P
T
case(OP)
T
Drain Voltage VGG<5V 17 V
DD
Gate Voltage VDD<12.5V, Pin=0W 6 V
GG
Input Power 10 mW
in
Output Power 10 W
out
Operation Case Temperature Range
Storage Temperature Range -40 to +110 °C
stg
f=820-851MHz,
ZG=ZL=50
-30 to +110 °C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS
(T
=+25°C, ZG=ZL=50, unless otherwise specified)
case
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
f Frequency Range 820 - 851 MHz
P
2f
I
GG
— Stability
— Load VSWR Tolerance
Output Power
out
Total Efficiency 35 - - %
T
2ndHarmonic - - -30 dBc
o
Input VSWR - - 4:1 —
in
VDD=12.5V, VGG=5V
P
=6W(VGGcontrol)
out
VDD=12.5V
Pin=1mW
Gate Current
VDD=10.0-15.2V, Pin=0.5-2mW,
P
<8W (VGGcontrol), Load VSWR=3:1
out
VDD=15.2V, Pin=1mW, P
=6W (VGGcontrol),
out
Load VSWR=20:1
6 - - W
- 1 - mA
No parasitic oscillation —
No degradation or destroy —
All parameters, conditions, ratings, and limits are subject to change without notice.
Publication Date : Oct．2011
2
< Silicon RF Power Modules >
RA06H8285M
RoHS Compliance, 820-851MHz 6W 12.5V, 3 Stage Amp. For MOBILE RADIO
TYPICAL PERFORMANCE (T
OUTPUT POWER, TOTAL EFFICIENCY, 2nd, 3rdHARMONICS versus FREQUENCY
and INPUT VSWR versus FREQUENCY
14
12
(W)
(-)
10
out
in
VDD=12.5V
r
8
Pin=1mW
6
@P
=6W
h
T
out
4
INPUT VSWR
OUTPUT POWER P
2
0
820 830 840 850 860
OUTPUT POWER, POWER GAIN and OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER DRAIN CURRENT versus INPUT POWER
50
40
(dBm)
out
30
FREQUENCY f (MHz)
Gp
P
out
=+25°C, ZG=ZL=50, unless otherwise specified)
case
P
r
in
@VGG=5V
out
@P
out
=6W
140
120
100
80
60
40
20
0
(%)
T
h
TOTAL EFFICIENCY
-20
-30
-40
2nd@P
HARMONICS (dBc)
-50
-60
820 830 840 850 860
5
(A)
4
DD
3
50
Gp
40
(dBm)
out
30
=6W
out
FREQUENCY f (MHz)
P
out
VDD=12.5V
Pin=1mW
rd
harmonics:
3
<-60dBc
@P
=6W
out
5
4
(A)
DD
I
3
20
I
DD
10
POWER GAIN Gp (dB)
OUTPUT POWER P
0
-20 -15 -10 -5 0 5 10
INPUTPOWER Pin(dBm)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
50
Gp
40
(dBm)
out
30
20
POWER GAIN Gp (dB)
10
OUTPUT POWER P
0
-20 -15 -10 -5 0 5 10
P
out
I
DD
INPUTPOWER Pin(dBm)
f=820MHz
VDD=12.5V
VGG=5V
f=851MHz
VDD=12.5V
VGG=5V
2
1
DRAIN CURRENT I
0
20
I
DD
10
POWER GAIN Gp (dB)
OUTPUT POWER P
f=836MHz
VDD=12.5V
VGG=5V
0
2
1
DRAIN CURRENT
0
-20 -15 -10 -5 0 5 10
INPUTPOWER Pin(dBm)
5
4
(A)
DD
3
2
1
DRAIN CURRENT I
0
Publication Date : Oct．2011
3
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