MITSUBISHI RA05H9595M User Manual
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance, 952-954MHz 5W 14V, 3 Stage Amp.
Silicon RF Power Semiconductors
RA05H9595M
DESCRIPTION
The RA05H9595M is a 5-watt RF MOSFET Amplifier Module
that operate in the 952- to 954-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors.
The output power and drain current increase as the gate voltage
increases. With a gate voltage around 3.5V (minimum), output
power and drain current increases substantially. The nominal
output power becomes available at 3.8V (typical) and 4V
(maximum). At V
=5V, the typical gate current is 1 mA.
GG
FEATURES
• Enhancement-Mode MOSFET Transistors
(I
≅0 @ VDD=14V, VGG=0V)
DD
• P
>5W, IT<1.4A @ VDD=14V, VGG=5V, Pin=1mW
out
• I
<1.4A @ VDD=14V, P
T
=3W(VGG control), Pin=1mW
out
•Frequency Range: 952-954MHz
• Low-Power Control Current I
=1mA (typ) at VGG=5V
GG
• Module Size: 60.5 x 14 x 6.4 mm
BLOCK DIAGRAM
2
1
1 RF Input (Pin)
2 Gate Voltage (V
3 Drain Voltage (V
4 RF Output (P
5 RF Ground (Case)
out
GG
)
PACKAGE CODE: H11S
), Power Control
), Battery
DD
3
4
5
RoHS COMPLIANCE
• RA05H9595M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER SUPPLY FORM
RA05H9595M-101
Antistatic tray,
20 modules/tray
RA05H9595M
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22 Jun 2010
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE
Silicon RF Power Semiconductors
RA05H9595M
MAXIMUM RATINGS
(T
=+25°C, unless otherwise specified)
case
SYMBOL PARAMETER CONDITIONS RATING UNIT
VDD Drain Voltage VGG<5V 17 V
VGG Gate Voltage VDD<14V, Pin=0mW 6 V
Pin Input Power 4 mW
P
Output Power 7 W
out
T
Operation Case Temperature Range
case(OP)
T
Storage Temperature Range -40 to +110 °C
stg
f=952-954MHz, V
=50Ω
Z
G=ZL
GG
<5V
-30 to +70 °C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS
(T
=+25°C, ZG=ZL=50Ω, unless otherwise specified)
case
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
f Frequency Range 952 - 954 MHz
P
Output Power
out
=14V, VGG=5V, Pin=1mW
V
DD
IT Total Current - - 1.4 A
ρ
Input VSWR - - 3:1 —
in
2fo 2nd Harmonic - - -25 dBc
VDD=14V, P
P
=1mW,f=953MHz,Zg=Zl=50 ohm
in
=3W(VGG control)
out
3fo 3nd Harmonic
— Stability
— Load VSWR Tolerance
=10.0-15.2V, Pin=0.5-2mW,P
V
DD
Load VSWR=3:1, f=952-954MHz
=15.2V, Pin=1mW, P
V
DD
=5W (VGG control),
out
Load VSWR=20:1, f=952-954MHz
<5W (VGG control),
out
5 - - W
- - -30 dBc
No parasitic oscillation —
No degradation or destroy —
All parameters, conditions, ratings, and limits are subject to change without notice.
RA05H9595M
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22 Jun 2010
TYPICAL PERFORMANCE
OUTPUT POWER, TOTAL EFFICIENCY, 2nd, 3rd HARMONICS versus FREQUENCY
and INPUT VSW R versus FREQUENCY
30
25
(W)
(-)
out
in
20
ρ
15
10
INPUT VSWR
5
OUTPUT POWER P
0
920 930 940 950 960 970 980
η
T
ρ
in
FRE QUENCY f (M Hz)
OUTPUT POWE R, POWER GAIN and OUTPUT POWE R and DRAIN CURRENT
DRAIN CURRENT versus INPUT POWER versus DRAIN VOLTAGE
50
Gp
40
(dBm)
out
30
P
out
20
POWER GAIN Gp (dB)
10
OUTPUT P O W ER P
0
-10 -5 0 5 10
I
DD
INPUT POWER P
OUTPUT POW E R and DRAIN CURRENT
versus GATE VOLTAGE
25
f=953MHz
V
=14V
(W)
out
20
15
P
in
DD
=1mW
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
(T
=+25°C, ZG=ZL=50Ω, unless otherwise specified)
case
70
60
50
(%)
T
η
P
out
40
VDD=14V
V
=5V
GG
P
=1mW
in
30
20
HARM O NICS (d Bc )
TOTAL EFFICIENCY
10
6
5
(A)
DD
(W)
out
4
3
f=953MHz
V
=14V
DD
V
=5V
GG
2
DRAIN CURRENT I
OUTPUT POWER P
1
(dBm)
in
5
4
(A)
DD
3
Silicon RF Power Semiconductors
RoHS COMPLIANCE
RA05H9595M
-20
VDD=14V
V
=5V
-30
nd
2
P
GG
=1mW
in
-40
-50
rd
3
-60
-70
920 930 940 950 960 970 980
FRE QUENCY f (M Hz)
25
f=953MHz
V
=5V
GG
20
P
=1mW
in
15
10
I
DD
P
out
5
0
2 4 6 8 10 12 14
DRAIN VOLTAGE V
DD
(V)
5
4
(A)
DD
3
2
1
DRAIN CURRE NT I
0
10
5
OUTPUT P O WER P
0
3 3.5 4 4.5 5 5.5
RA05H9595M
I
DD
P
out
GATE VOLTAGE V
GG
(V)
2
1
DRAIN CURRENT I
0
22 Jun 2010
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