MITSUBISHI RA05H8693M User Manual
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance,866-928MHz 5W 14V, 3 Stage Amp.
Silicon RF Power Semiconductors
RA05H8693M
DESCRIPTION
The RA05H8693M is a 5watt RF MOSFET Amplifier Module
that operate in the 866 to 928MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. The output power and
drain current increase as the gate voltage increases.
With a gate voltage around 3.5V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 3.8V (typical) and 4V (maximum).
At V
=5V, the typical gate current is 1 mA.
GG
FEATURES
• Enhancement-Mode MOSFET Transistors
≅0 @ VDD=14V, VGG=0V)
(I
DD
• P
>5W, IT<1.4A @ VDD=14V, VGG=5V, Pin=1mW
out
• I
<1.4A @ VDD=14V, P
T
=3W(VGG control), Pin=1mW
out
• Broadband Frequency Range: 866-928MHz
• Low-Power Control Current I
=1mA (typ) at VGG=5V
GG
• Module Size: 60.5 x 14 x 6.4 mm
RoHS COMPLIANCE
• RA05H8693M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
BLOCK DIAGRAM
2
1
1 RF Input (Pin)
2 Gate Voltage (V
3 Drain Voltage (V
4 RF Output (P
5 RF Ground (Case)
out
GG
)
PACKAGE CODE: H11S
), Power Control
), Battery
DD
3
4
5
ORDERING INFORMATION:
ORDER NUMBER SUPPLY FORM
RA05H8693M-101
Antistatic tray,
20 modules/tray
RA05H8693M
1/9
22 Jun 2010
Silicon RF Power Semiconductors
RA05H8693M
MAXIMUM RATINGS
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
(T
=+25°C, unless otherwise specified)
case
RoHS COMPLIANCE
SYMBOL PARAMETER CONDITIONS RATING UNIT
VDD Drain Voltage VGG<5V 17 V
VGG Gate Voltage VDD<14V, Pin=0mW 6 V
Pin Input Power 4 mW
P
Output Power 7 W
out
T
Operation Case Temperature Range
case(OP)
T
Storage Temperature Range -40 to +110 °C
stg
f=866-928MHz, V
=50Ω
Z
G=ZL
GG
<5V
-30 to +110 °C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS
(T
=+25°C, ZG=ZL=50Ω, unless otherwise specified)
case
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
f Frequency Range 866 - 928 MHz
P
Output Power
out
=14V, VGG=5V, Pin=1mW
V
DD
IT Total Current - - 1.4 A
2fo 2nd Harmonic - - -25 dBc
ρ
Input VSWR - - 3:1 —
in
VDD=14V, P
P
=1mW
in
=3W(VGG control)
out
IGG Gate Current
=10.0-15.2V, Pin=0.5-2mW,
V
— Stability
— Load VSWR Tolerance
DD
P
<5W (VGG control), Load VSWR=3:1
out
=15.2V, Pin=1mW, P
V
DD
=5W (VGG control),
out
Load VSWR=20:1
All parameters, conditions, ratings, and limits are subject to change without notice.
5 - - W
- 1 - mA
No parasitic oscillation —
No degradation or destroy —
RA05H8693M
2/9
22 Jun 2010
TYPICAL PERFORMANCE
OUTPUT POWER, TOTAL EFFICIENCY, 2nd, 3rd HARMONICS versus FREQUENCY
and INPUT VSWR versus FREQUENCY
35
30
(W)
out
(-)
in
25
ρ
VDD=14V
=3W(V
P
out
20
P
in
15
10
INPUT VSWR
5
OUTPUT POWER P
0
850 870 890 910 930 950 970
adj.)
GG
=1mW
η
T
ρ
in
FREQUENCY f(MHz)
OUTPUT POWER, POWER GAIN and OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER DRAIN CURRENT versus INPUT POWER
70
60
(dBm)
out
50
40
Gp
P
out
30
I
20
POWER GAIN Gp(dB)
10
OUTPUT POWER P
DD
0
-20 -15 -10 -5 0 5
INPUT POWER P
OUTPUT POWER, POWER GAIN and OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER DRAIN CURRENT versus INPUT POWER
70
60
(dBm)
50
out
40
30
20
POWER GAIN Gp(dB)
10
OUTPUT POWER P
0
-20 -15 -10 -5 0 5
Gp
P
out
I
DD
INPUT POWER P
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
(T
=+25°C, ZG=ZL=50Ω, unless otherwise specified)
case
120
100
P
out
80
60
40
(%)
T
η
20
TOTAL EFFICIENCY
0
7
6
(A)
DD
5
(dBm)
out
4
3
f=866MHz,
V
=14V,
DD
=5V
V
GG
2
DRAIN CURRENT I
1
OUTPUT POWER P
0
(dBm)
in
7
6
(A)
5
DD
(dBm)
out
4
3
f=926MHz,
=14V,
V
DD
=5V
V
GG
2
DRAIN CURRENT I
1
OUTPUT POWER P
0
(dBm)
in
Silicon RF Power Semiconductors
RoHS COMPLIANCE
-20
VDD=14V
=3W(VGG adj.)
P
-30
P
out
=1mW
in
-40
nd
-50
-60
HARMONICS (dBc)
2
rd
3
-70
850 870 890 910 930 950 970
FREQUENCY f(MHz)
70
60
50
Gp
P
40
30
20
POWER GAIN Gp(dB)
10
out
I
DD
f=896MHz,
=14V,
V
DD
=5V
V
GG
0
-20 -15 -10 -5 0 5
INPUT POWER P
(dBm)
in
70
60
50
40
30
20
POWER GAIN Gp(dB)
10
Gp
P
out
I
DD
f=956MHz,
=14V,
V
DD
V
=5V
GG
0
-20 -15 -10 -5 0 5
INPUT POWER P
(dBm)
in
RA05H8693M
7
6
(A)
5
DD
4
3
2
DRAIN CURRENT I
1
0
7
6
(A)
5
DD
4
3
2
DRAIN CURRENT I
1
0
OUTPUT POWER and DRAIN CURRENT OUTPUT POWER and DRAIN CURRENT
30
25
(W)
out
20
15
10
5
OUTPUT POWER P
0
RA05H8693M
versus DRAIN VOLTAGE versus DRAIN VOLTAGE
30
f=896MHz,
(W)
out
25
V
P
GG
=1mW
in
=5V,
20
15
I
DD
10
5
OUTPUT POWER P
0
3 5 7 9 111315
DRAIN VOLTAGE V
f=866MHz,
=5V,
V
GG
P
=1mW
in
I
DD
P
out
3 5 7 9 11 13 15
DRAIN VOLTAGE V
(V)
DD
6
5
(A)
DD
4
3
2
1
DRAIN CURRENT I
0
3/9
6
P
out
5
(A)
DD
4
3
2
1
DRAIN CURRENT I
0
(V)
DD
22 Jun 2010
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