Page 1
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance,866-928MHz 5W 14V, 3 Stage Amp.
Silicon RF Power Semiconductors
RA05H8693M
DESCRIPTION
The RA05H8693M is a 5watt RF MOSFET Amplifier Module
that operate in the 866 to 928MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. The output power and
drain current increase as the gate voltage increases.
With a gate voltage around 3.5V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 3.8V (typical) and 4V (maximum).
At V
=5V, the typical gate current is 1 mA.
GG
FEATURES
• Enhancement-Mode MOSFET Transistors
≅0 @ VDD=14V, VGG=0V)
(I
DD
• P
>5W, IT<1.4A @ VDD=14V, VGG=5V, Pin=1mW
out
• I
<1.4A @ VDD=14V, P
T
=3W(VGG control), Pin=1mW
out
• Broadband Frequency Range: 866-928MHz
• Low-Power Control Current I
=1mA (typ) at VGG=5V
GG
• Module Size: 60.5 x 14 x 6.4 mm
RoHS COMPLIANCE
• RA05H8693M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
BLOCK DIAGRAM
2
1
1 RF Input (Pin)
2 Gate Voltage (V
3 Drain Voltage (V
4 RF Output (P
5 RF Ground (Case)
out
GG
)
PACKAGE CODE: H11S
), Power Control
), Battery
DD
3
4
5
ORDERING INFORMATION:
ORDER NUMBER SUPPLY FORM
RA05H8693M-101
Antistatic tray,
20 modules/tray
RA05H8693M
1/9
22 Jun 2010
Page 2
Silicon RF Power Semiconductors
RA05H8693M
MAXIMUM RATINGS
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
(T
=+25°C, unless otherwise specified)
case
RoHS COMPLIANCE
SYMBOL PARAMETER CONDITIONS RATING UNIT
VDD Drain Voltage VGG<5V 17 V
VGG Gate Voltage VDD<14V, Pin=0mW 6 V
Pin Input Power 4 mW
P
Output Power 7 W
out
T
Operation Case Temperature Range
case(OP)
T
Storage Temperature Range -40 to +110 °C
stg
f=866-928MHz, V
=50Ω
Z
G=ZL
GG
<5V
-30 to +110 °C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS
(T
=+25°C, ZG=ZL=50Ω, unless otherwise specified)
case
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
f Frequency Range 866 - 928 MHz
P
Output Power
out
=14V, VGG=5V, Pin=1mW
V
DD
IT Total Current - - 1.4 A
2fo 2nd Harmonic - - -25 dBc
ρ
Input VSWR - - 3:1 —
in
VDD=14V, P
P
=1mW
in
=3W(VGG control)
out
IGG Gate Current
=10.0-15.2V, Pin=0.5-2mW,
V
— Stability
— Load VSWR Tolerance
DD
P
<5W (VGG control), Load VSWR=3:1
out
=15.2V, Pin=1mW, P
V
DD
=5W (VGG control),
out
Load VSWR=20:1
All parameters, conditions, ratings, and limits are subject to change without notice.
5 - - W
- 1 - mA
No parasitic oscillation —
No degradation or destroy —
RA05H8693M
2/9
22 Jun 2010
Page 3
TYPICAL PERFORMANCE
OUTPUT POWER, TOTAL EFFICIENCY, 2nd, 3rd HARMONICS versus FREQUENCY
and INPUT VSWR versus FREQUENCY
35
30
(W)
out
(-)
in
25
ρ
VDD=14V
=3W(V
P
out
20
P
in
15
10
INPUT VSWR
5
OUTPUT POWER P
0
850 870 890 910 930 950 970
adj.)
GG
=1mW
η
T
ρ
in
FREQUENCY f(MHz)
OUTPUT POWER, POWER GAIN and OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER DRAIN CURRENT versus INPUT POWER
70
60
(dBm)
out
50
40
Gp
P
out
30
I
20
POWER GAIN Gp(dB)
10
OUTPUT POWER P
DD
0
-20 -15 -10 -5 0 5
INPUT POWER P
OUTPUT POWER, POWER GAIN and OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER DRAIN CURRENT versus INPUT POWER
70
60
(dBm)
50
out
40
30
20
POWER GAIN Gp(dB)
10
OUTPUT POWER P
0
-20 -15 -10 -5 0 5
Gp
P
out
I
DD
INPUT POWER P
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
(T
=+25°C, ZG=ZL=50Ω, unless otherwise specified)
case
120
100
P
out
80
60
40
(%)
T
η
20
TOTAL EFFICIENCY
0
7
6
(A)
DD
5
(dBm)
out
4
3
f=866MHz,
V
=14V,
DD
=5V
V
GG
2
DRAIN CURRENT I
1
OUTPUT POWER P
0
(dBm)
in
7
6
(A)
5
DD
(dBm)
out
4
3
f=926MHz,
=14V,
V
DD
=5V
V
GG
2
DRAIN CURRENT I
1
OUTPUT POWER P
0
(dBm)
in
Silicon RF Power Semiconductors
RoHS COMPLIANCE
-20
VDD=14V
=3W(VGG adj.)
P
-30
P
out
=1mW
in
-40
nd
-50
-60
HARMONICS (dBc)
2
rd
3
-70
850 870 890 910 930 950 970
FREQUENCY f(MHz)
70
60
50
Gp
P
40
30
20
POWER GAIN Gp(dB)
10
out
I
DD
f=896MHz,
=14V,
V
DD
=5V
V
GG
0
-20 -15 -10 -5 0 5
INPUT POWER P
(dBm)
in
70
60
50
40
30
20
POWER GAIN Gp(dB)
10
Gp
P
out
I
DD
f=956MHz,
=14V,
V
DD
V
=5V
GG
0
-20 -15 -10 -5 0 5
INPUT POWER P
(dBm)
in
RA05H8693M
7
6
(A)
5
DD
4
3
2
DRAIN CURRENT I
1
0
7
6
(A)
5
DD
4
3
2
DRAIN CURRENT I
1
0
OUTPUT POWER and DRAIN CURRENT OUTPUT POWER and DRAIN CURRENT
30
25
(W)
out
20
15
10
5
OUTPUT POWER P
0
RA05H8693M
versus DRAIN VOLTAGE versus DRAIN VOLTAGE
30
f=896MHz,
(W)
out
25
V
P
GG
=1mW
in
=5V,
20
15
I
DD
10
5
OUTPUT POWER P
0
3 5 7 9 111315
DRAIN VOLTAGE V
f=866MHz,
=5V,
V
GG
P
=1mW
in
I
DD
P
out
3 5 7 9 11 13 15
DRAIN VOLTAGE V
(V)
DD
6
5
(A)
DD
4
3
2
1
DRAIN CURRENT I
0
3/9
6
P
out
5
(A)
DD
4
3
2
1
DRAIN CURRENT I
0
(V)
DD
22 Jun 2010
Page 4
TYPICAL PERFORMANCE
OUTPUT POWER and DRAIN CURRENT OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE versus DRAIN VOLTAGE
30
f=926MHz,
25
V
=5V,
20
P
GG
=1mW
in
(W)
out
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
(T
=+25°C, ZG=ZL=50Ω, unless otherwise specified)
case
6
5
(A)
DD
4
(W)
out
30
25
20
f=956MHz,
V
GG
=1mW
P
in
RoHS COMPLIANCE
=5V,
Silicon RF Power Semiconductors
RA05H8693M
6
5
(A)
DD
4
15
I
DD
10
5
OUTPUT POWER P
0
3579111315
DRAIN VOLTAGE V
(V)
DD
3
P
out
2
1
DRAIN CURRENT I
0
15
10
5
OUTPUT POWER P
0
I
DD
P
out
3579111315
DRAIN VOLTAGE V
(V)
DD
OUTPUT POWER and DRAIN CURRENT OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE versus GATE VOLTAGE
30
(W)
out
25
20
f=866MHz,
V
=14V,
DD
=1mW
P
in
P
out
I
DD
15
10
5
OUTPUT POWER P
0
33.544.555.5
GATE VOLTAGE V
(V)
GG
6
5
(A)
DD
4
3
2
1
DRAIN CURRENT I
0
30
(W)
25
out
20
15
10
5
OUTPUT POWER P
0
f=896MHz,
V
=14V,
DD
=1mW
P
in
P
out
I
DD
3 3.5 4 4.5 5 5.5
GATE VOLTAGE V
(V)
GG
OUTPUT POWER and DRAIN CURRENT OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE versus GATE VOLTAGE
30
f=926MHz,
(W)
25
V
=14V,
20
15
P
DD
=1mW
in
I
P
out
10
5
OUTPUT POWER P
0
33.544.555.5
GATE VOLTAGE V
(V)
GG
6
5
(A)
DD
4
DD
3
out
2
1
DRAIN CURRENT I
0
30
(W)
25
out
20
15
10
5
OUTPUT POWER P
0
f=956MHz,
V
=14V,
DD
=1mW
P
in
I
DD
P
33.544.555.5
GATE VOLTAGE V
(V)
GG
3
2
1
DRAIN CURRENT I
0
6
5
(A)
DD
4
3
2
1
DRAIN CURRENT I
0
6
5
(A)
DD
4
3
2
out
1
DRAIN CURRENT I
0
RA05H8693M
4/9
22 Jun 2010
Page 5
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Silicon RF Power Semiconductors
RoHS COMPLIANCE
RA05H8693M
OUTLINE DRAWING
14±0.5
(mm)
8.3±1
1
21.3±1
2
43.3±1
0.45
51.3±1
60.5±1
57.5±0.5
50.4±1
2-R1.6±0.2
3
4 5
11±0.5
6±1
3.3 +0.8/-0.4
0.09±0.02
Area [A]
(49.5)
(6.4)
2.3±0.3
Expansion figure of area [A]
0.09±0.02
1 RF Input (Pin)
2 Gate Voltage (V
3 Drain Voltage (V
4 RF Output (P
5 RF Ground (Case)
out
)
GG
)
DD
)
RA05H8693M
5/9
22 Jun 2010
Page 6
Ω
TEST BLOCK DIAGRAM
Generator
Signal
Attenuator
amplifier
C1, C2: 4700pF, 22uF in parallel
EQUIVALENT CIRCUIT
1
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Power
Meter
Pre-
Attenuator
Directional
Coupler
EQUIVALENT CIRCUIT
2
ZG=50
1
C1 C2
- +
DC Power
Supply V
RoHS COMPLIANCE
2
GG
DUT
3
DC Power
Supply V
4
+ -
5
Z
DD
=50Ω
3
Silicon RF Power Semiconductors
RA05H8693M
Spectrum
Analyzer
Directional
Coupler
Attenuator
1 RF Input (P
2 Gate Voltage (V
3 Drain Voltage (V
4 RF Output (P
5 RF Ground (Case)
4
5
Power
Meter
)
in
GG
DD
)
out
)
)
RA05H8693M
22 Jun 2010
6/9
Page 7
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE
Silicon RF Power Semiconductors
RA05H8693M
RECOMMENDATIONS and APPLICATION INFORMATION:
Construction:
This module consists of an alumina substrate soldered onto a copper flange. For mechanical protection, a plastic
cap is attached with silicone. The MOSFET transistor chips are die bonded onto metal, wire bonded to the
substrate, and coated with resin. Lines on the substrate (eventually inductors), chip capacitors, and resistors form
the bias and matching circuits. Wire leads soldered onto the alumina substrate provide the DC and RF connection.
Following conditions must be avoided:
a) Bending forces on the alumina substrate (for example, by driving screws or from fast thermal changes)
b) Mechanical stress on the wire leads (for example, by first soldering then driving screws or by thermal expansion)
c) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichloroethylene)
d) Frequent on/off switching that causes thermal expansion of the resin
e) ESD, surge, overvoltage in combination with load VSWR, and oscillation
ESD:
This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required.
Mounting:
Heat sink flatness must be less than 50 µm (a heat sink that is not flat or particles between module and heat sink
may cause the ceramic substrate in the module to crack by bending forces, either immediately when driving screws
or later when thermal expansion forces are added).
A thermal compound between module and heat sink is recommended for low thermal contact resistance and to
reduce the bending stress on the ceramic substrate caused by the temperature difference to the heat sink.
The module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board.
M3 screws are recommended with a tightening torque of 4.0 to 6.0 kgf-cm.
Soldering and Defluxing:
This module is designed for manual soldering.
The leads must be soldered after the module is screwed onto the heat sink.
The temperature of the lead (terminal) soldering should be lower than 350°C and shorter than 3 second.
Ethyl Alcohol is recommend for removing flux. Trichloroethylene solvents must not be used (they may cause
bubbles in the coating of the transistor chips which can lift off the bond wires).
P
out
(W)
R
th(ch-case)
(°C/W)
@ I
DD
=1.4A
T
I
(A)
VDD
(V)
Thermal Design of the Heat Sink:
At P
=3W, VDD=14V and Pin=1mW each stage transistor operating conditions are:
out
P
Stage
in
(W)
1st 0.001 0.03 29.0 0.02
2nd 0.030 0.70 4.5 0.30
14
3rd 0.700 3.00 3.0 1.07
The channel temperatures of each stage transistor Tch = T
= T
T
ch1
T
= T
ch2
T
= T
ch3
+ (14V x 0.02A - 0.03W + 0.001W) x 29.0°C/W = T
case
+ (14V x 0.3A – 0.7W + 0.03W) x 4.5°C/W = T
case
+ (14V x 1.07A - 3.0W + 0.7W) x 3.0°C/W = T
case
+ (VDD x IDD - P
case
case
case
case
+ Pin) x R
out
+ 7.3°C
+ 15.9 °C
+ 38.0 °C
th(ch-case)
are:
For long-term reliability, it is best to keep the module case temperature (T
temperature T
+ P
) of the heat sink, including the contact resistance, is:
in
R
th(case-air)
=60°C and P
air
=3W, the required thermal resistance R
out
= (90°C - 60°C) / (3W/15% – 3W + 0.001W) = 1.76 °C/W
th (case-air)
) below 90°C. For an ambient
case
= ( T
case
- T
) / ( (P
air
out
When mounting the module with the thermal resistance of 1.76 °C/W, the channel temperature of each stage
transistor is:
T
= T
= T
= T
+ 37.3 °C
air
+ 45.9 °C
air
+ 68.0 °C
air
ch1
T
ch2
T
ch3
The 175°C maximum rating for the channel temperature ensures application under derated conditions.
/ ηT ) - P
out
RA05H8693M
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22 Jun 2010
Page 8
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE
Silicon RF Power Semiconductors
RA05H8693M
Output Power Control:
Depending on linearity, the following two methods are recommended to control the output power:
a) FM modulation:
By the gate voltage (V
GG
).
b) Linear modulation:
By RF input power P
.
in
The gate voltage is used to set the drain’s quiescent current for the required linearity.
Oscillation:
To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and
drain, a 4.700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor.
When an amplifier circuit around this module shows oscillation, the following may be checked:
a) Do the bias decoupling capacitors have a low inductance pass to the case of the module?
b) Is the load impedance Z
c) Is the source impedance Z
=50Ω?
L
=50Ω?
G
ATTENTION:
1.High Temperature; This product might have a heat generation while operation,Please take notice that have a
possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off.
At the near the product,do not place the combustible material that have possibilities to arise the fire.
2. Generation of High Frequency Power; This product generate a high frequency power. Please take notice that do
not leakage the unnecessary electric wave and use this products without cause damage for human and property per
normal operation.
3. Before use; Before use the product,Please design the equipment in consideration of the risk for human and
electric wave obstacle for equipment.
PRECAUTION FOR THE USE OF MITSUBISHI SILICON RF POWER AMPLIFIER DEVICES:
1.The specifications of mention are not guarantee values in this data sheet. Please confirm additional details
regarding operation of these products from the formal specification sheet. For copies of the formal specification
sheets, please contact one of our sales offices.
2.RA series products (RF power amplifier modules) are designed for consumer mobile communication terminals
and were not specifically designed for use in other applications. In particular, while these products are highly
reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is
sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements.
Examples of critical communications elements would include transmitters for base station applications and fixed
station applications that operate with long term continuous transmission and a higher on-off frequency during
transmitting, especially for systems that may have a high impact to society.
3.RA series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore
appropriate ESD precautions are required.
4.In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is
recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan,
etc.) to keep the case temperature for RA series products lower than 60deg/C under standard conditions, and
less than 90deg/C under extreme conditions.
5.RA series products are designed to operate into a nominal load impedance of 50 ohms. Under the condition of
operating into a severe high load VSWR approaching an open or short, an over load condition could occur. In the
worst case there is risk for burn out of the transistors and burning of other parts including the substrate in the
module.
6.The formal specification includes a guarantee against parasitic oscillation under a specified maximum load
mismatch condition. The inspection for parasitic oscillation is performed on a sample basis on our manufacturing
line. It is recommended that verification of no parasitic oscillation be performed at the completed equipment level
also.
7.For specific precautions regarding assembly of these products into the equipment, please refer to the
supplementary items in the specification sheet.
8.Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any
way from it’s original form.
9.For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page of
this data sheet.
10. Please refer to the additional precautions in the formal specification sheet.
RA05H8693M
8/9
22 Jun 2010
Page 9
ELECTROSTATIC SENSITIVE DEVICE
any malfunction o
pp
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE
Silicon RF Power Semiconductors
RA05H8693M
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better
Keep safety first in your circuit designs !
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs, with appropriate measures such as (i)
placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against
r mishap.
These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
-
semiconductor product best suited to the customer’s application; they do not convey any license under
any intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a
third party.
- Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any
third-party’s rights, originating in the use of any product data, diagrams, charts, programs, algorithms,
or circuit application examples contained in these materials.
- All information contained in these materials, including product data, diagrams, charts, programs and
algorithms represents information on products at the time of publication of these materials, and are
subject to change by Mitsubishi Electric Corporation without notice due to product improvements or
other reasons. It is therefore recommended that customers contact Mitsubishi Electric Corporation or
an authorized Mitsubishi Semiconductor product distributor for the latest product information before
purchasing a product listed herein. The information described here may contain technical inaccuracies
or typographical errors. Mitsubishi Electric Corporation assumes no responsibility for any damage,
liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information
published by Mitsubishi Electric Corporation by various means, including the Mitsubishi
Semiconductor home page (http://www.mitsubishichips.com).
- When using any or all of the information contained in these materials, including product data, diagrams,
charts, programs, and algorithms, please be sure to evaluate all information as a total system before
making a final decision on the applicability of the information and products. Mitsubishi Electric
Corporation assumes no responsibility for any damage, liability or other loss resulting from the
information contained herein.
- Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or
system that is used under circumstances in which human life is potentially at stake. Please contact
Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when
considering the use of a product contained herein for any specific purposes, such as apparatus or
systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
- The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in
whole or in part these materials.
- If these products or technologies are subject to the Japanese export control restrictions, they must be
exported under a license from the Japanese government and cannot be imported into a country other
Notes regarding these materials
than the a
roved destination.
RA05H8693M
9/9
22 Jun 2010
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