MITSUBISHI RA03M9595M User Manual

ELECTROSTATIC SENSITIVE DEVICE

2

1

OBSERVE HANDLING PRECAUTIONS

Silicon RF Power Semiconductors

RA

RA03M9595

RARA

03M9595M

03M959503M9595

M

MM

RoHS Compliance ,

DESCRIPTION

The RA03M9595M is a 3.0-watt RF MOSFET Amplifier Module.

The battery can be connected directly to the drain of the

enhancement-mode MOSFET transistors.

The output power and drain current increase as the gate voltage increases. With a gate voltage around 2.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3V (typical) and 3.5V (maximum). At VGG=3.5V, the typical gate current is 1 mA.

FEATURES

• Enhancement-Mode MOSFET Transistors

(IDD≅0 @ VDD=8.0V, VGG=0V)

• P

>3.0W @ VDD=8.0V, VGG=3.5V, Pin=50mW

out

• IT<2.0A @ P

• Frequency Range: 952-954MHz

• Low-Power Control Current IGG=1mA (typ) at VGG=3.5V

• Module Size: 30 x 10 x 5.4 mm

=32dBm (Pin control), VDD=8.0V, Pin=50mW

out

952-954MHz 3.0W 8.0V, 2 Stage Amp.

BLOCK DIAGRAM

3

4

5

1 RF Input (Pin) 2 Gate Voltage (VGG), Power Control 3 Drain Voltage (VDD), Battery 4 RF Output (P 5 RF Ground (Case)

)

out

PACKAGE CODE: H46S

RoHS COMPLIANCE

• RA03M9595M-101 is a RoHS compliance products.

• RoHS compliance is indicate by the letter “G” after the Lot Marking.

• This product include the lead in the Glass of electronic parts and the

lead in electronic Ceramic parts.

How ever, it is applicable to the following exceptions of RoHS Directions.

1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes.

2.Lead in electronic Ceramic parts.

ORDERING INFORMATION:

ORDER NUMBER SUPPLY FORM

RA03M9595M-101

Antistatic tray,

50 modules/tray

RA03M9595M

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1/8

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

RoHS COMPLIANT

Silicon RF Power Semiconductors

RA

RA03M9595

03M9595MMMM

RARA

03M959503M9595

MAXIMUM RATINGS

SYMBOL PARAMETER CONDITIONS RATING UNIT

VDD Drain Voltage VGG<3.5V, ZG=ZL=50ohm 9.2 V VGG Gate Voltage VDD<8.0V, Pin=0mW, ZG=ZL=50ohm 4 V

Pin Input Power 70 mW

P

Output Power 6 W

out

T

case(OP)

T

The above parameters are independently guaranteed.

Operation Case Temperature Range

Storage Temperature Range -40 to +110

stg

(T

=+25deg.C. unless otherwise specified)

case

f=952-954MHz, VGG<3.5V ZG=ZL=50ohm

-30 to +90

°C °C

ELECTRICAL CHARACTERISTICS

(T

=+25°C , ZG=ZL=50Ω, unless otherwise specified)

case

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

f Frequency Range 952 - 954 MHz

P

Output Power

out

IT Total Current - - 2.0 A

2fo 2nd Harmonic - - -30 dBc 3fo 3rd Harmonic - - -35 dBc

ρin

IGG Gate Current

— Stability

— Load VSWR Tolerance

All parameters, conditions, ratings, and limits are subject to change without notice.

Input VSWR - - 4:1 —

VDD=8.0V,VGG=3.5V, Pin=50mW

P

=32dBm (Pin control),

out

VDD=8.0V, VGG=3.5V

ZG=ZL=50ohm, VDD=4.0/8.0/9.2V, VGG=3.5V, P

=0.8/1.6/3W (Pin control), Load VSWR=4:1

out

VDD=9.2V, Pin=50mW, P Load VSWR=20:1

=3W (VGG control),

out

3.0 - - W

- 1 - mA

No parasitic oscillation

No degradation or destroy —

—

RA03M9595M

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and INPUT VSWR versus FREQUENCY

OUTPUT POWER, POWER GAIN and

OUTPUT POWER and DRAIN CURRENT

DRAIN CURRENT versus INPUT POWER

versus DRAIN VOLTAGE

OUTPUT POWER and DRAIN CURRENT

versus GATE VOLTAGE

2

3

TYPICAL PERFORMANCE

OUTPUT POWER, TOTAL EFFICIENCY, 2nd, 3rd HARMONICS versus FREQUENCY

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

(T

=+25deg.C, ZG=ZL=50Ω, unless otherwise specified)

case

RoHS COMPLIANT

Silicon RF Power Semiconductors

RA

RA03M9595

03M9595MMMM

RARA

03M959503M9595

10

9

(W)

8

(-)

out

IN

7

ρ

6 5

VDD=8.0V VGG=3.5V

4

Pin=50mW

3

INPUT VSWR

2

OUTPUT POWER P

1

ηηηη

T

P

OUT

ρρρρ

IN

ININ

0

940 945 950 955 960

FREQUENCY f(MHz)

40

f=953MHz

35

VDD=8.0V

30 25

VGG=3.5V

Gp

GpGp

(dBm)

out

20 15 10

POWER GAIN Gp(dB)

5

OUTPUT POWER P

IIII

DD

DDDD

0

-15 -10 -5 0 5 10 15 20

INPUT POWER PIN(dBm)

50 45 40 35 30 25 20 15 10 5 0

(%)

T

TOTAL EFFICIENCY η

-20

VDD=8.0V

-25

VGG=3.5V

-30

Pin=50mW

-35

-40

-45

HARMONICS(dBc)

rd

-50

,3

nd

2

-55

nd

rd

-60 940 945 950 955 960

FREQUENCY f (MHz)

4.0

P

OUT

3.5

3.0

2.5

(A)

DD

2.0

1.5

1.0

0.5

DRAIN CURRENT I

0.0

8

f=953MHz

7

Pin=50mW

(W)

VGG=3.5V

6

out

P

out

5 4 3 2

OUTPUT POWER P

1 0

0 2 4 6 8 10

DRAIN VOLTAGE VDD(V)

4.0

3.5

3.0

(A)

DD

2.5

2.0

I

1.5

DD

1.0

0.5

DRAIN CURRENT I

0.0

(W)

out

OUTPUT POWER P

RA03M9595M

7

f=953MHz

6 5

Pin=50mW VDD=8.0V

P

out

4

I

3

DD

2 1 0

1.5 2.0 2.5 3.0 3.5 4.0

GATE VOLTAGE VGG(V)

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

(A)

DD

DRAIN CURRENT I

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