MITSUBISHI RA03M8894M User Manual

ELECTROSTATIC SENSITIVE DEVICE

BLOCK

DIAGRAM

2

1

OBSERVE HANDLING PRECAUTIONS

RoHS Compliance , 889-941MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO

DESCRIPTION

The RA03M8894M is a 3.6-watt RF MOSFET Amplifier
Module for 7.2-volt portable radios that operate in the 889- to
941-MHz range.

The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the
drain and the RF input signal attenuates up to 60 dB. The output
power and drain current increase as the gate voltage increases.
With a gate voltage around 2.5V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 3V (typical) and 3.5V (maximum). At
VGG=3.5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.

FEATURES

• Enhancement-Mode MOSFET Transistors

(IDD≅0 @ VDD=7.2V, VGG=0V)

• P

>3.6W @ VDD=7.2V, VGG=3.5V, Pin=50mW

out

• ηT>32% @ P

• Broadband Frequency Range: 889-941MHz

• Low-Power Control Current IGG=1mA (typ) at VGG=3.5V

• Module Size: 30 x 10 x 5.4 mm

• Linear operation is possible by setting the quiescent drain

current with the gate voltage and controlling the output power
with the input power

=3W (VGG control), VDD=7.2V, Pin=50mW

out

Silicon RF Power Semiconductors

RA

RA03M8894

RARA

03M8894M

03M889403M8894

3

1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (P
5 RF Ground (Case)

)

out

PACKAGE CODE: H46S

M

MM

4

5

RoHS COMPLIANT

• RA03M8894M-101 is a RoHS compliant products.

• RoHS compliance is indicate by the letter “G” after the Lot Marking.

• This product include the lead in the Glass of electronic parts and the

lead in electronic Ceramic parts.

How ever, it applicable to the following exceptions of RoHS Directions.

1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.

2.Lead in electronic Ceramic parts.

ORDERING INFORMATION:

ORDER NUMBER SUPPLY FORM

RA03M8894M-101

Antistatic tray,

50 modules/tray

RA03M8894M

1/9

28 Jun 2010

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

MAXIMUM RATINGS

SYMBOL PARAMETER CONDITIONS RATING UNIT

VDD Drain Voltage VGG<3.5V 9.2 V
VGG Gate Voltage VDD<7.2V, Pin=0mW 4 V

Pin Input Power 70 mW

P

Output Power 5 W

out

T

case(OP)

T

The above parameters are independently guaranteed.

Operation Case Temperature Range

Storage Temperature Range -40 to +110 °C

stg

(T

=+25°C, unless otherwise specified)

case

f=889-941MHz,
ZG=ZL=50Ω

RoHS COMPLIANT

Silicon RF Power Semiconductors

RA

RA03M8894

03M8894MMMM

RARA

03M889403M8894

-30 to +90 °C

ELECTRICAL CHARACTERISTICS

(T

=+25°C, ZG=ZL=50Ω, unless otherwise specified)

case

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

f Frequency Range 889 - 941 MHz

P

Output Power

out

ηT

2fo 2nd Harmonic - - -30 dBc

ρin

IGG Gate Current

— Stability

— Load VSWR Tolerance

All parameters, conditions, ratings, and limits are subject to change without notice.

Total Efficiency 32 - - %

Input VSWR - - 4:1 —

VDD=7.2V,VGG=3.5V, Pin=50mW

P

=3W (VGG control),

out

VDD=7.2V,
Pin=50mW

VDD=4.0-9.2V, Pin=25-70mW, P
Load VSWR=4:1

VDD=9.2V, Pin=50mW, P
Load VSWR=20:1

=3.6W (VGG control),

out

<5W (VGG control),

out

3.6 - - W

- 1 - mA

No parasitic oscillation

No degradation or destroy —

—

RA03M8894M

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OUTPUT POWER, TOTAL EFFICIENCY,

and INPUT VSWR versus FREQUENCY

OUTPUT POWER, POWER GAIN and

OUTPUT POWER, POWER GAIN and

DRAIN CURRENT versus INPUT POWER

DRAIN CURRENT versus INPUT POWER

OUTPUT POWER, POWER GAIN and

DRAIN CURRENT versus INPUT POWER

OUTPUT POWER and DRAIN CURRENT

OUTPUT POWER and DRAIN CURRENT

versus DRAIN VOLTAGE

versus DRAIN VOLTAGE

TYPICAL PERFORMANCE

8
7

(W)

out

(-)

6

in

ρ

5
4
3
2

INPUT VSWR

1

OUTPUT POWER P

0

870 880 890 900 910 920 930 940 950 960

P

@VGG=3.5V

out

ηηηη

@P

T

ρρρρ

@P

=3.0W

in

out

FREQUENCY f(MHz)

50

40

30

(dBm)

out

20

P

OUTPUT POWER

10

POWER GAIN Gp(dB)

0

-15 -10 -5 0 5 10 15 20

Gp

INPUT POWER Pin(dBm)

50

40

30

(dBm)

out

20

P

OUTPUT POWER

10

POWER GAIN Gp(dB)

Gp

0

-15 -10 -5 0 5 10 15 20
INPUT POWER Pin(dBm)

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

(T

=+25°C, ZG=ZL=50Ω, unless otherwise specified)

case

80
70
60
50

(%)

40

out

=3.0W

I

DD

I

DD

VDD=7.2V
Pin=50mW

P

out

f=889MHz,
VDD=7.2V,
VGG=3.5V

P

out

f=941MHz,
VDD=7.2V,
VGG=3.5V

30
20
10
0

T

η

TOTAL EFFICIENCY

5

(A)

4

DD

3

2

1

DRAIN CURRENT I

0

5

(A)

4

DD

3

2

1

DRAIN CURRENT I

0

Silicon RF Power Semiconductors

RoHS COMPLIANT

50

40

30

(dBm)

out

20

P

OUTPUT POWER

10

POWER GAIN Gp(dB)

0

-15 -10 -5 0 5 10 15 20

Gp

I

DD

INPUT POWER Pin(dBm)

RA

RA03M8894

03M8894MMMM

RARA

03M889403M8894

5

P

out

f=914MHz,
VDD=7.2V,
VGG=3.5V

(A)

4

DD

I

3

2

1

DRAIN CURRENT

0

10

f=889MHz,

9

(W)

VGG=3.5V,

8

out

Pin=50mW

7
6
5
4
3
2
1

OUTPUT POWER P

0

2 3 4 5 6 7 8 9 10

DRAIN VOLTAGE VDD(V)

RA03M8894M

5

4

(A)

P

out

I

DD

DD

3

2

1

DRAIN CURRENT I

0

10

f=914MHz,

9

(W)

VGG=3.5V,

8

out

Pin=50mW

7
6
5
4
3
2
1

OUTPUT POWER P

0

2 3 4 5 6 7 8 9 10

DRAIN VOLTAGE VDD(V)

P

out

I

DD

5

4

3

2

1

0

(A)

DD

DRAIN CURRENT I

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