MITSUBISHI RA03M8087M User Manual

ELECTROSTATIC SENSITIVE DEVICE

2

1

OBSERVE HANDLING PRECAUTIONS

RoHS Compliance , 806-870MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO

Silicon RF Power Semiconductors

RA

RA03M8087

RARA

03M8087M

03M808703M8087

M

MM

DESCRIPTION

The RA03M8087M is a 3.6-watt RF MOSFET Amplifier
Module for 7.2-volt portable radios that operate in the 806 to
870-MHz range.

The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the
drain and the RF input signal attenuates up to 60 dB. The output
power and drain current increase as the gate voltage increases.
With a gate voltage around 2.5V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 3V (typical) and 3.5V (maximum). At
VGG=3.5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.

FEATURES

• Enhancement-Mode MOSFET Transistors

(IDD≅0 @ VDD=7.2V, VGG=0V)

• P

>3.6W @ VDD=7.2V, VGG=3.5V, Pin=50mW

out

• ηT>32% @ P

• Broadband Frequency Range: 806-870MHz

• Low-Power Control Current IGG=1mA (typ) at VGG=3.5V

• Module Size: 30 x 10 x 5.4 mm

• Linear operation is possible by setting the quiescent drain

current with the gate voltage and controlling the output power
with the input power.

=3W (VGG control), VDD=7.2V, Pin=50mW

out

BLOCK DIAGRAM

1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (P
5 RF Ground (Case)

)

out

PACKAGE CODE: H46S

3

4

5

RoHS COMPLIANT

• RA03M8087M-101 is a RoHS compliant products.

• RoHS compliance is indicate by the letter “G” after the Lot Marking.

• This product include the lead in the Glass of electronic parts and the

lead in electronic Ceramic parts.
How ever, it applicable to the following exceptions of RoHS Directions.

1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.

2.Lead in electronic Ceramic parts.

ORDERING INFORMATION:

ORDER NUMBER SUPPLY FORM

RA03M8087M-101

RA03M8087M

Antistatic tray,

50 modules/tray

1/9

28 Jun 2010

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

Silicon RF Power Semiconductors

RoHS COMPLIANT

RA

RA03M8087

03M8087MMMM

RARA

03M808703M8087

MAXIMUM RATINGS

SYMBOL PARAMETER CONDITIONS RATING UNIT

VDD Drain Voltage VGG<3.5V 9.2 V
VGG Gate Voltage VDD<7.2V, Pin=0mW 4 V

Pin Input Power 70 mW

P

Output Power 5 W

out

T

case(OP)

T

The above parameters are independently guaranteed.

Operation Case Temperature Range

Storage Temperature Range -40 to +110 °C

stg

ELECTRICAL CHARACTERISTICS

(T

=+25°C, unless otherwise specified)

case

(T

=+25°C, ZG=ZL=50Ω, unless otherwise specified)

case

f=806-870MHz,
ZG=ZL=50Ω

-30 to +90 °C

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

f Frequency Range 806 - 870 MHz

P

Output Power

out

ηT

2fo 2nd Harmonic - - -30 dBc

ρin

IGG Gate Current

— Stability

— Load VSWR Tolerance

Total Efficiency 32 - - %

Input VSWR - - 4:1 —

VDD=7.2V,VGG=3.5V, Pin=50mW

P

=3W (VGG control),

out

VDD=7.2V,
Pin=50mW

VDD=4.0-9.2V, Pin=25-70mW, P
Load VSWR=4:1

VDD=9.2V, Pin=50mW, P
Load VSWR=20:1

=3.6W (VGG control),

out

<5W (VGG control),

out

3.6 - - W

- 1 - mA

No parasitic oscillation

No degradation or destroy —

—

All parameters, conditions, ratings, and limits are subject to change without notice.

RA03M8087M

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ELECTROSTATIC SENSITIVE DEVICE

OUTPUT POWER, TOTAL EFFICIENCY,

and INPUT VSWR versus FREQUENCY

OUTPUT POWER, POWER GAIN and

OUTPUT POWER, POWER GAIN and

DRAIN CURRENT versus INPUT POWER

DRAIN CURRENT versus INPUT POWER

OUTPUT POWER, POWER GAIN and

DRAIN CURRENT versus INPUT POWER

OUTPUT POWER and DRAIN CURRENT

OUTPUT POWER and DRAIN CURRENT

versus DRAIN VOLTAGE

versus DRAIN VOLTAGE

OBSERVE HANDLING PRECAUTIONS

TYPICAL PERFORMANCE

8
7

(W)

out

(-)

6

in

ρ

5
4
3
2

INPUT VSWR

1

OUTPUT POWER P

0

790 800 810 820 830 840 850 860 870 880

FREQUENCY f(MHz)

ηηηη

T

ρρρρ

@P

=3.0W

in

out

50

40

30

(dBm)

out

20

P

OUTPUT POWER

10

POWER GAIN Gp(dB)

0

-15 -10 -5 0 5 10 15 20

Gp

INPUT POWER Pin(dBm)

50

40

30

(dBm)

out

20

P

OUTPUT POWER

10

POWER GAIN Gp(dB)

Gp

0

-15 -10 -5 0 5 10 15 20
INPUT POWER Pin(dBm)

@P

RoHS COMPLIANT

(T

=+25°C, ZG=ZL=50Ω, unless otherwise specified)

case

80
70
60
50

(%)

40

T

η

30
20

TOTAL EFFICIENCY

10
0

5

out

P

out

(A)

4

DD

3

2

1

DRAIN CURRENT I

0

5

(A)

4

DD

3

2

1

DRAIN CURRENT I

0

50

40

30

(dBm)

out

20

P

OUTPUT POWER

10

POWER GAIN Gp(dB)

0

I

DD

I

DD

P

out

out

=3.0W

@VGG=3.5V

VDD=7.2V
Pin=50mW

P

f=806MHz,
VDD=7.2V,
VGG=3.5V

f=870MHz,
VDD=7.2V,
VGG=3.5V

Silicon RF Power Semiconductors

RA

RA03M8087

03M8087MMMM

RARA

03M808703M8087

P

out

Gp

I

DD

-15 -10 -5 0 5 10 15 20
INPUT POWER Pin(dBm)

f=838MHz,
VDD=7.2V,
VGG=3.5V

5

(A)

4

DD

I

3

2

1

DRAIN CURRENT

0

10

f=806MHz,

9

(W)

VGG=3.5V,

8

out

Pin=50mW

7
6
5
4
3
2
1

OUTPUT POWER P

0

2 3 4 5 6 7 8 9 10

DRAIN VOLTAGE VDD(V)

RA03M8087M

5

4

(A)

P

out

I

DD

DD

3

2

1

DRAIN CURRENT I

0

10

f=838MHz,

9

(W)

VGG=3.5V,

8

out

Pin=50mW

7
6
5
4
3
2
1

OUTPUT POWER P

0

2 3 4 5 6 7 8 9 10

DRAIN VOLTAGE VDD(V)

P

out

5

4

(A)

DD

3

2

I

DD

1

DRAIN CURRENT I

0

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