MITSUBISHI RA03M4547MD User Manual

Silicon RF Power Semiconductors

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

RA03M4547MD

RoHS Compliance , 450-470MHz 38dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO

DESCRIPTION

The RA03M4547MD is a 38 dBm output RF MOSFET
Amplifier Module for 7.2 volt portable radios that operate in the
450 to 470 MHz range.

FEATURES

• Enhancement-Mode MOSFET Transistors

(I

≅0 @ VDD=7.2V, VGG=0V)

DD

• P

>38dBm @ VDD=7.2V, Pin=19dBm

out

Idq1=30mA(Vgg1adjust.),Idq2=1A(Vgg2 adjust.) ,

>34% @ VDD=7.2V, P

• η

T

=38dBm (Pin adjust.),

out

Idq1=30mA(Vgg1 adjust.),Idq2=1A(Vgg2 adjust.)

• IMD3<-25dBc @ V

=7.2V, P

DD

(average) =35dBm(Pin adjust.)

out

Two tone test at 1KHz separation

Idq1=30mA(Vgg1 adjust.),Idq2=1A(Vgg2 adjust.)

• Broadband Frequency Range: 450-470MHz

• Low-Power Adjust. Current I

=1mA (typ) at VGG=3.5V

GG

• Module Size: 30 x 10 x 5.4 mm

BLOCK DIAGRAM

2

1

1 RF Input (Pin)
2 FIRST STAGE GATE BIAS DC SUPPLY TERMINAL（Vgg1）

3 FINAL STAGE GATE BIAS DC SUPPLY TERMINAL（Vgg2）
4 Drain Voltage (V

5 RF Output (P
6 RF Ground (Case)

out

DD

)

), Battery

4

3

5

6

PACKAGE CODE: H46S

RoHS COMPLIANT

• RA03M4547MD-101 is a RoHS compliant products.

• RoHS compliance is indicate by the letter “G” after the Lot Marking.

• This product include the lead in the Glass of electronic parts and the

lead in electronic Ceramic parts.
How ever,it applicable to the following exceptions of RoHS Directions.

1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.

2.Lead in electronic Ceramic parts.

ORDERING INFORMATION:

ORDER NUMBER SUPPLY FORM

RA03M4547MD-101

Antistatic tray,

50 modules/tray

RA03M4547MD

1/9

28 Jun 2010

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

RoHS COMPLIANT

Silicon RF Power Semiconductors

RA03M4547MD

MAXIMUM RATINGS

(T

=+25°C, unless otherwise specified)

case

SYMBOL PARAMETER CONDITIONS RATING UNIT

VDD Drain Voltage VGG<3.5V 9.2 V

V

Gate Voltage VDD<7.2V, Pin=0mW 4 V

GG1

V

Gate Voltage VDD<7.2V, Pin=0mW 4 V

GG2

Pin Input Power 100 mW

P

Output Power 10 W

out

T

Operation Case Temperature Range

case(OP)

T

Storage Temperature Range -40 to +110 °C

stg

f=450-470MHz,
ZG=ZL=50Ω

-30 to +90 °C

The above parameters are independently guaranteed.

ELECTRICAL CHARACTERISTICS

(T

=+25°C, ZG=ZL=50Ω, unless otherwise specified)

case

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

f Frequency Range 450 - 470 MHz

=7.2V,Pin(Single Carrier)=+19dBm,

V

P

Output Power

out

DD

Idq1=30mA(Vgg1 adjust.),
Idq2=1A(Vgg2 adjust.)

η

2fo 2nd Harmonic - - -25 dBc

ρ

IGG Gate Current

IMD3

IMD5

GV Gain Variation

Total Efficiency 34 - - %

T

VDD=7.2V,P

(Single Carrier) =38dBm (,Pin adjust.),

out

Idq1=30mA(Vgg1 adjust.),

Input VSWR - - 4.4:1 —

in

Idq2=1A(Vgg2 adjust.)

rd

Inter Modulation

3

Distortion

th

Inter Modulation

5

Distortion

VDD=7.2V,P

(average)=35dBm(Pin adjust.),

out

Idq1=30mA(Vgg1 adjust.),
Idq2=1A(Vgg2 adjust.) ,

Two tone test at 1KHz separation
V

DD

=7.2V,P

(Single Carrier)=35dBm(Pin adjust.),

out

Across specified frequency range
Idq1=30mA(Vgg1 adjust.),

Idq2=1A(Vgg2 adjust.)
Vdd=6.0/7.2/9.2V,

Idq1=30mA(Vgg1 adjust),

— Stability

Idq2=1A(Vgg2 adjust) ,
Po(Single Carrier)=15-38dBm(Pin control)

LOAD VSWR=2:1(All Phase),Zg=50Ω

38 - - dBm

- 1 mA

- - -25 dBc

- - -25 dBc

0 - 4 dB

No parasitic oscillation —

— Load VSWR Tolerance

Vdd=9.2V, P
LOAD VSWR=2:1(All Phase),Zg=50Ω,
Idq1=30mA(Vgg1 adjust.@Vdd=7.2V),

(Single Carrier)=39dBm (Pin adjust.),

out

Idq2=1A(Vgg2 adjust.@Vdd=7.2V)

All parameters, conditions, ratings, and limits are subject to change without notice.

RA03M4547MD

2/9

No degradation or destroy —

28 Jun 2010

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

TYPICAL PERFORMANCE

RoHS COMPLIANT

(T

=+25°C, ZG=ZL=50Ω, unless otherwise specified)

case

Silicon RF Power Semiconductors

RA03M4547MD

RA03M4547MD

Effi vs. Po

Tc=+25deg.C, Vdd=7.2V
f=450MHz,
Idq 1st stager=30mA
Idq Final Stage=1.0A

50
45
40
35
30
25
20

Effi(%),Gp(dB)

15
10

5
0

10 15 20 25 30 35 40

50
45
40
35
30
25
20

Effi(%),Gp(dB)

15
10

5
0

10 15 20 25 30 35 40

Effi
Gp

Po(s in g le carri e r)( dB m)

RA03M4547MD

Effi vs. Po

Tc=+25deg.C, Vdd=7.2V
f=460MHz,
Idq 1st stager=30mA
Idq Final Stage=1.0A

Effi
Gp

Po(s in g le carri e r)( dB m)

RA03M4547MD

IMD3,IMD5 vs. Po

Tc=+25deg.C, Vdd=7.2V
f=450MHz,
Idq 1st stager=30mA
Idq Fin al Stage=1.0A

0

-10

-20

-30

-40

IMD3,IMD5(dBc)

-50

-60

-70
15 20 25 30 35 40

0

-10

-20

-30

-40

IMD3,IMD5(dBc)

-50

-60

-70
15 20 25 30 35 40

IMD3(Delta freq=1KHz)

IMD5(Delta freq=1KHz)

Po(2tone average)(dBm)

RA03M4547MD

IMD3,IMD5 vs. Po

Tc=+25deg.C, Vdd=7.2V
f=460MHz,
Idq 1st stager=30mA
Idq Fin al Stage=1.0A

IMD3(Delta freq=1KHz)

IMD5(Delta freq=1KHz)

Po(2tone average)(dBm)

50
45
40
35
30
25
20

Effi(%),Gp(dB)

15
10

5
0

10 15 20 25 30 35 40

RA03M4547MD

RA03M4547MD

Effi vs. Po

Tc=+25deg.C, Vdd=7.2V
f=470MHz
Idq 1st stager=30mA
Idq Final Stage=1.0A

Effi
Gp

Po(s in g le carri e r)( dB m)

3/9

RA03M4547MD

IMD3,IMD5 vs. Po

Tc=+25deg.C, Vdd=7.2V
f=470MHz
Idq 1st stager=30mA
Idq Fin al Stage=1.0A

0

-10

-20

-30

-40

IMD3,IMD5(dBc)

-50

-60

-70
15 20 25 30 35 40

IMD3(Delta freq=1KHz)

IMD5(Delta freq=1KHz)

Po(2tone average)(dBm)

28 Jun 2010