Mitsubishi QM800HA-24B Datasheet

QM800HA-24B

MITSUBISHI TRANSISTOR MODULES

QM800HA-24B

HIGH POWER SWITCHING USE

INSULATED TYPE

• IC Collector current ........................ 800A

• V

CEX Collector-emitter voltage ......... 1200V

• h

FE DC current gain............................. 750

• Insulated Type

• UL Recognized
Yellow Card No. E80276 (N)

File No. E80271

APPLICATION

AC motor controllers, UPS, CVCF, DC motor controllers, NC equipment, Welders

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

145

19 28

9

BX

E

163

51 47 25

B

3728

27

E

C

9

27

6565

8–φ6.5

3973

74

74

42

C

BX

E

B

8

E

3–M4

44.5

47MAX.

16316334334

LABEL

2–M8

45

50MAX.

Feb.1999

ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)

Symbol

CEX (SUS)

V

VCEX

VCBO

VEBO

IC

–IC

PC

IB

–ICSM

Tj

Tstg

Viso

Collector-emitter voltage

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Collector reverse current

Collector dissipation

Base current

Surge collector reverse current
(forward diode current)

Junction temperature

Storage temperature

Isolation voltage

—

Mounting torque

—

Weight

Parameter

Conditions

C=1A, VEB=2V

I

EB=2V

V

Emitter open

Collector open

DC

DC (forward diode current)

C=25°C

T

DC

Peak value of one cycle of 60Hz (half wave)

Charged part to case, AC for 1 minute

Main terminal screw M8

Mounting screw M6

B(E) terminal screw M4

BX terminal screw M4

Typical value

MITSUBISHI TRANSISTOR MODULES

QM800HA-24B

HIGH POWER SWITCHING USE

INSULATED TYPE

Ratings

1200

1200

1200

7

800

800

5300

40

8000

–40~+150

–40~+125

2500

8.83~10.8

90~110

1.96~2.94

20~30

0.98~1.47

12~18

0.98~1.47

12~18

2100

Unit

V

V

V

V

A

A

W

A

A

°C
°C

V

N·m

kg·cm

N·m

kg·cm

N·m

kg·cm

N·m

kg·cm

g

ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)

Symbol

I

CEX

ICBO

IEBO

VCE (sat)

VBE (sat)

–VCEO

hFE

ton

ts

tf

Rth (j-c) Q

Rth (j-c) R

Rth (c-f)

Collector cutoff current

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector-emitter reverse voltage

DC current gain

Switching time

Thermal resistance
(junction to case)

Contact thermal resistance
(case to fin)

Parameter

Test conditions

CE=1200V, VEB=2V

V

CB=1200V,Emitter open

V

EB=7V, Collector open

V

I

C=800A, IB=1.06A

I

C=–800A (diode forward voltage)

C=800A, VCE=4.0V

I

CC=600V, IC=800A, IB1=1.6A, –IB2=16A

V

Transistor part

Diode part

Conductive grease applied

Min.

—

—

—

—

—

—

750

—

—

—

—

—

—

Limits

Typ.

—

—

—

—

—

—

—

—

—

—

—

—

—

Max.

8.0

8.0

600

4.0

4.2

1.8

—

2.5

20

5.0

0.023

0.12

0.01

Unit

mA

mA

mA

V

V

V

—

µs
µs

µs
°C/W
°C/W

°C/W

Feb.1999