Mitsubishi QM75TX-H Datasheet
QM75TX-H
MITSUBISHI TRANSISTOR MODULES
QM75TX-H
HIGH POWER SWITCHING USE
INSULATED TYPE
• IC Collector current .......................... 75A
• V
CEX Collector-emitter voltage ........... 600V
• h
FE DC current gain...............................75
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
AC motor controllers, UPS, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
B
1
2020
B
2
U
(10)
18.5 18.5 18.5 18.5
68
B
B
3
5
B
B
6
4
V
80
94
(N)(P)
W
(10)
11–M4
10.5
14 14
4–φ5.4
62.5
74
86
B1
B2
B3
B4
B5
U
VW
B6
P(+)
N(–)
LABEL
7
13 13
4
2
24.82628.2
Note: All Transistor Units are Darlingtons.
Feb.1999
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Symbol
CEX (SUS)
V
VCEX
VCBO
VEBO
IC
–IC
PC
IB
–ICSM
Tj
Tstg
Viso
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
—
Mounting torque
—
Weight
Parameter
C=1A, VEB=2V
I
EB=2V
V
Emitter open
Collector open
DC
DC (forward diode current)
C=25°C
T
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Main terminal screw M4
Mounting screw M5
Typical value
Conditions
MITSUBISHI TRANSISTOR MODULES
QM75TX-H
HIGH POWER SWITCHING USE
INSULATED TYPE
Ratings
600
600
600
7
75
75
350
4.5
750
–40~+150
–40~+125
2500
0.98~1.47
10~15
1.47~1.96
15~20
520
Unit
V
V
V
V
A
A
W
A
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Symbol
I
CEX
ICBO
IEBO
VCE (sat)
VBE (sat)
–VCEO
hFE
ton
ts
tf
Rth (j-c) Q
Rth (j-c) R
Rth (c-f)
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
V
CE=600V, VEB=2V
CB=600V, Emitter open
V
EB=7V
V
I
C=75A, IB=1A
–I
C=75A (diode forward voltage)
C=75A, VCE=2V/5V
I
CC=300V, IC=75A, IB1=–IB2=1.5A
V
Transistor part (per 1/6 module)
Diode part (per 1/6 module)
Conductive grease applied (per 1/6 module)
Test conditions
Min.
—
—
—
—
—
—
75/100
—
—
—
—
—
—
Limits
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
1.0
1.0
200
2.0
2.5
1.85
—
2.5
12
3.0
0.35
1.3
0.2
Unit
mA
mA
mA
V
V
V
—
µs
µs
µs
°C/W
°C/W
°C/W
Feb.1999
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