Mitsubishi QM75HA-H Datasheet

QM75HA-H

MITSUBISHI TRANSISTOR MODULES

QM75HA-H

HIGH POWER SWITCHING USE

INSULATED TYPE

• IC Collector current .......................... 75A

• V

CEX Collector-emitter voltage ........... 600V

• h

FE DC current gain............................... 75

• Insulated Type

• UL Recognized
Yellow Card No. E80276 (N)

File No. E80271

APPLICATION

Inverters, Servo drives, UPS, DC motor controllers, NC equipment, Welders

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

53.5

43.3

8

8

3.5

B

M4

C

33

9

14

9

φ5.3

E

8

5.3

36.5

R6

3.5

B

C

E

24

LABEL

4.5

7

22

Feb.1999

ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)

Symbol

CEX (SUS)

V

VCEX

VCBO

VEBO

IC

–IC

PC

IB

–ICSM

Tj

Tstg

Viso

Collector-emitter voltage

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Collector reverse current

Collector dissipation

Base current

Surge collector reverse current
(forward diode current)

Junction temperature

Storage temperature

Isolation voltage

—

Mounting torque

—

Weight

Parameter

Conditions

C=1A, VEB=2V

I

EB=2V

V

Emitter open

Collector open

DC

DC (forward diode current)

C=25°C

T

DC

Peak value of one cycle of 60Hz (half wave)

Charged part to case, AC for 1 minute

Main terminal screw M4

Mounting screw M5

Typical value

MITSUBISHI TRANSISTOR MODULES

QM75HA-H

HIGH POWER SWITCHING USE

INSULATED TYPE

Ratings

600

600

600

7

75

75

350

4.5

750

–40~+150

–40~+125

2500

0.98~1.47

10~15

1.47~1.96

15~20

90

Unit

V

V

V

V

A

A

W

A

A

°C
°C

V

N·m

kg·cm

N·m

kg·cm

g

ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)

Symbol

CEX

I

ICBO

IEBO

VCE (sat)

VBE (sat)

–VCEO

hFE

ton

ts

tf

Rth (j-c) Q

Rth (j-c) R

Rth (c-f)

Parameter

Collector cutoff current

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector-emitter reverse voltage

DC current gain

Switching time

Thermal resistance
(junction to case)

Contact thermal resistance
(case to fin)

V

CE=600V, VEB=2V

CB=600V, Emitter open

V

EB=7V

V

I

C=75A, IB=1A

–I

C=75A (diode forward voltage)

C=75A, VCE=2V/5V

I

CC=300V, IC=75A, IB1=–IB2=1.5A

V

Transistor part

Diode part

Conductive grease applied

Test conditions

Min.

—

—

—

—

—

—

75/100

—

—

—

—

—

—

Limits

Typ.

—

—

—

—

—

—

—

—

—

—

—

—

—

Max.

1.0

1.0

200

2.0

2.5

1.85

—

2.5

12

3.0

0.35

1.3

0.15

Unit

mA

mA

mA

V

V

V

—

µs
µs

µs
°C/W
°C/W

°C/W

Feb.1999