Mitsubishi QM75E2Y-H, QM75E3Y-H Datasheet

QM75E2Y/E3Y-H

MITSUBISHI TRANSISTOR MODULES

QM75E2Y/E3Y-H

HIGH POWER SWITCHING USE

INSULATED TYPE

• IC Collector current .......................... 75A

• V

CEX Collector-emitter voltage ........... 600V

• h

FE DC current gain............................... 75

• Insulated Type

• UL Recognized
Yellow Card No. E80276 (N)

File No. E80271

APPLICATION

DC chopper, DC motor controllers, Inverters

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

34

31

94

(7) (7)

13 10.510.5

M5

(8)

80

2020 27

12

LABEL

E

1

B

1

Tab#110,
t=0.5

φ6.5

22.5

6.5

(E

2

Y)

C

A

E

1

(E

3

Y)

C

1

1

D

2

D

2

D

1

D

1

1

B

1

E

1

K

E

1

1

E

1

B

1

Feb.1999

ABSOLUTE MAXIMUM RATINGS (Transistor part including D1, Tj=25°C)

Symbol

CEX (SUS)

V

VCEX

VCBO

VEBO

IC

–IC

PC

IB

–ICSM

Collector-emitter voltage

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Collector reverse current

Collector dissipation

Base current

Surge collector reverse current
(forward diode current)

Parameter

Conditions

C=1A, VEB=2V

I

EB=2V

V

Emitter open

Collector open

DC

DC (forward diode current)

C=25°C

T

DC

Peak value of one cycle of 60Hz (half wave)

ABSOLUTE MAXIMUM RATINGS (Diode part (D2), Tj=25°C)

Symbol

RRM

V

VRSM

VR (DC)

IDC

IFSM

2

t

I

Repetitive peak reverse voltage

Non-repetitive peak reverse voltage

DC reverse voltage

DC current

Surge (non-repetitive) forward current

2

t

I

for fusing

Parameter

Conditions

DC circuit, resistive, inductive load

Peak value of one cycle of 60Hz (half wave)

Value for one cycle of surge current

MITSUBISHI TRANSISTOR MODULES

QM75E2Y/E3Y-H

HIGH POWER SWITCHING USE

INSULATED TYPE

Ratings

600

600

600

7

75

75

350

4.5

750

Ratings

600

720

480

75

1500

9.45 × 10

3

Unit

W

Unit

A

V

V

V

V

A

A

A

A

V

V

V

A

A

2

s

ABSOLUTE MAXIMUM RATINGS (Common)

Symbol

j

T

Tstg

Viso

Junction temperature

Storage temperature

Isolation voltage

—

Mounting torque

—

Weight

Parameter

Charged part to case, AC for 1 minute

Main terminal screw M5

Mounting screw M6

Typical value

Conditions

ELECTRICAL CHARACTERISTICS (Transistor part including D1, Tj=25°C)

Symbol

I

CEX

ICBO

IEBO

VCE (sat)

VBE (sat)

–VCEO

hFE

ton

ts

tf

Rth (j-c) Q

Rth (j-c) R

Rth (c-f)

Parameter

Collector cutoff current

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector-emitter reverse voltage

DC current gain

Switching time

Thermal resistance
(junction to case)

Contact thermal resistance
(case to fin)

V

CE=600V, VEB=2V

CB=600V, Emitter open

V

EB=7V

V

I

C=75A, IB=1A

–I

C=75A (diode forward voltage)

C=75A, VCE=2V/5V

I

CC=300V, IC=75A, IB1=–IB2=1.5A

V

Transistor part

Diode part

Conductive grease applied

Test conditions

Min.

—

—

—

—

—

—

75/100

—

—

—

—

—

—

Ratings

–40~150

–40~125

2500

1.47~1.96

15~20

1.96~2.94

20~30

210

Limits

Typ.

—

—

—

—

—

—

—

—

—

—

—

—

—

Max.

1.0

1.0

200

2.0

2.5

1.85

—

2.5

12

3.0

0.35

1.3

0.15

Unit

°C
°C

V

N·m

kg·cm

N·m

kg·cm

g

Unit

mA

mA

mA

V

V

V

—

µs
µs

µs
°C/W
°C/W

°C/W

Feb.1999