QM75E2Y/E3Y-H
MITSUBISHI TRANSISTOR MODULES
QM75E2Y/E3Y-H
HIGH POWER SWITCHING USE
INSULATED TYPE
• IC Collector current .......................... 75A
• V
CEX Collector-emitter voltage ........... 600V
• h
FE DC current gain............................... 75
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
DC chopper, DC motor controllers, Inverters
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
34
31
94
(7) (7)
13 10.510.5
M5
(8)
80
2020 27
12
LABEL
E
1
B
1
Tab#110,
t=0.5
φ6.5
22.5
6.5
(E
2
Y)
C
A
E
1
(E
3
Y)
C
1
1
D
2
D
2
D
1
D
1
1
B
1
E
1
K
E
1
1
E
1
B
1
Feb.1999
ABSOLUTE MAXIMUM RATINGS (Transistor part including D1, Tj=25°C)
Symbol
CEX (SUS)
V
VCEX
VCBO
VEBO
IC
–IC
PC
IB
–ICSM
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Parameter
Conditions
C=1A, VEB=2V
I
EB=2V
V
Emitter open
Collector open
DC
DC (forward diode current)
C=25°C
T
DC
Peak value of one cycle of 60Hz (half wave)
ABSOLUTE MAXIMUM RATINGS (Diode part (D2), Tj=25°C)
Symbol
RRM
V
VRSM
VR (DC)
IDC
IFSM
2
t
I
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
DC current
Surge (non-repetitive) forward current
2
t
I
for fusing
Parameter
Conditions
DC circuit, resistive, inductive load
Peak value of one cycle of 60Hz (half wave)
Value for one cycle of surge current
MITSUBISHI TRANSISTOR MODULES
QM75E2Y/E3Y-H
HIGH POWER SWITCHING USE
INSULATED TYPE
Ratings
600
600
600
7
75
75
350
4.5
750
Ratings
600
720
480
75
1500
9.45 × 10
3
Unit
W
Unit
A
V
V
V
V
A
A
A
A
V
V
V
A
A
2
s
ABSOLUTE MAXIMUM RATINGS (Common)
Symbol
j
T
Tstg
Viso
Junction temperature
Storage temperature
Isolation voltage
—
Mounting torque
—
Weight
Parameter
Charged part to case, AC for 1 minute
Main terminal screw M5
Mounting screw M6
Typical value
Conditions
ELECTRICAL CHARACTERISTICS (Transistor part including D1, Tj=25°C)
Symbol
I
CEX
ICBO
IEBO
VCE (sat)
VBE (sat)
–VCEO
hFE
ton
ts
tf
Rth (j-c) Q
Rth (j-c) R
Rth (c-f)
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
V
CE=600V, VEB=2V
CB=600V, Emitter open
V
EB=7V
V
I
C=75A, IB=1A
–I
C=75A (diode forward voltage)
C=75A, VCE=2V/5V
I
CC=300V, IC=75A, IB1=–IB2=1.5A
V
Transistor part
Diode part
Conductive grease applied
Test conditions
Min.
—
—
—
—
—
—
75/100
—
—
—
—
—
—
Ratings
–40~150
–40~125
2500
1.47~1.96
15~20
1.96~2.94
20~30
210
Limits
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
1.0
1.0
200
2.0
2.5
1.85
—
2.5
12
3.0
0.35
1.3
0.15
Unit
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
Unit
mA
mA
mA
V
V
V
—
µs
µs
µs
°C/W
°C/W
°C/W
Feb.1999
ELECTRICAL CHARACTERISTICS (Diode part (D2), Tj=25°C)
Symbol
I
RRM
VFM
trr
Qrr
Rth (j-c)
Rth (c-f)
Repetitive peak reverse current
Forward voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Contact thermal resistance
Parameter
Test conditions
V
R=VRRM, Tj=150°C
F=75A
I
I
F=75A, di/dt=–150A/µs, VR=300V, Tj=150°C
Junction to case
Conductive grease applied (case to fin)
MITSUBISHI TRANSISTOR MODULES
QM75E2Y/E3Y-H
HIGH POWER SWITCHING USE
INSULATED TYPE
Min.
—
—
—
—
—
—
Limits
Typ.
—
—
—
—
—
—
Max.
1.0
1.5
0.9
30
0.6
0.15
Unit
mA
V
µs
µC
°C/W
°C/W
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
200
160
C (A)
120
80
40
COLLECTOR CURRENT I
0
01 23 4 5
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
1
10
7
5
4
3
B (A)
2
0
10
7
5
4
3
BASE CURRENT I
2
–1
10
1.0 1.4 1.8 2.2 2.6 3.0
IB=2.0AIB=1.5A
IB=1.0A
IB=0.5A
Tj=25°C
VCE=2.0V
j=25°C
T
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
2
3
10
FE
7
5
4
3
10
2
2
VCE=2.0V
7
5
DC CURRENT GAIN h
4
Tj=25°C
3
Tj=125°C
2
0
10 23457110 23457210
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
1
10
7
5
4
, VBE (sat) (V)
3
VBE(sat)
2
CE (sat)
0
10
7
5
VCE(sat)
4
3
2
–1
10
1
10 23457210 23457310
SATURATION VOLTAGE V
IB=1A
COLLECTOR CURRENT IC (A)BASE-EMITTER VOLTAGE VBE (V)
VCE=5.0V
Tj=25°C
Tj=125°C
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM75E2Y/E3Y-H
HIGH POWER SWITCHING USE
INSULATED TYPE
VCE (sat) (V)
VOLTAGE
COLLECTOR-EMITTER SATURATION
(µs)
s, tf
SWITCHING TIME t
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
5
4
3
IC=30A
2
1
Tj=25°C
Tj=125°C
0
10
–2
10
–1
10
BASE CURRENT IB (A) COLLECTOR CURRENT IC (A)
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
2
1
10
7
5
4
t
s
3
10
2
0
t
f
7
5
4
3
2
–1
345 2 3457
7010
10
2
IC=100A
IC=75A
IC=50A
0
444
V
CC
=300V
I
B1
=1.5A
IC=75A
Tj=25°C
Tj=125°C
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
2
t
CC
=300V
s
Tj=25°C
Tj=125°C
t
f
1
10
7
V
5
IB1=–IB2=1.5A
4
on, ts, tf (µs)
3
2
0
10
7
5
4
t
SWITCHING TIME t
1
10
753275327532
on
3
2
0
10 23457110 23457210
REVERSE BIAS SAFE OPERATING AREA
160
C (A)DERATING FACTOR (%)
120
IB2=–2A
–5A
80
40
10
COLLECTOR CURRENT I
1
Tj=125°C
0
0 200 400 600 800
COLLECTOR-EMITTER VOLTAGE VCE (V)BASE REVERSE CURRENT –IB2 (A)
FORWARD BIAS SAFE OPERATING AREA DERATING FACTOR OF F. B. S. O. A.
3
10
7
5
3
C (A)
2
2
10
7
5
3
2
1
10
7
5
3
COLLECTOR CURRENT I
NON-REPETITIVE
2
T
C
=25°C
0
10
0
10
DC
10
1
COLLECTOR-EMITTER VOLTAGE V
tw=50µs
1ms
10ms
10
100µs
500µs
2
3
10
444
753275327532
CE (V) CASE TEMPERATURE TC (°C)
100
90
SECOND BREAKDOWN AREA
80
70
60
50
COLLECTOR
DISSIPATION
40
30
20
10
0
0 20 60 100 120 16040 80 140
Feb.1999
Zth (j-c) (°C/W)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
0
10
0.5
1
10
7532
4
0.4
0.3
0.2
0.1
MITSUBISHI TRANSISTOR MODULES
QM75E2Y/E3Y-H
HIGH POWER SWITCHING USE
INSULATED TYPE
0
10
–3
10
–2
10
–1
444
753275327532
TIME (s)
PERFORMANCE CURVES (Diode part (D1))
FORWARD CHARACTERISTICS
2
10
7
5
4
F (A)
3
2
1
10
7
5
4
3
FORWARD CURRENT I
2
0
10
0 0.4 0.8 1.2 1.6 2.0
FORWARD VOLTAGE VF (A)
REVERSE RECOVERY CHARACTERISTICS
2
10
VCC=300V
7
B1
=–IB2=1.5A
I
5
4
3
2
1
10
7
Irr (A), Qrr (µc)
5
4
3
2
0
10
0
10 23457110 23457210
FORWARD CURRENT I
Tj=25°C
Tj=125°C
(TYPICAL)
(TYPICAL)
I
rr
Tj=25°C
Tj=125°C
Q
rr
t
rr
F (A) TIME (s)
10
10
10
10
0
MAXIMUM SURGE CURRENT
800
700
FSM (A)Z
600
500
400
300
200
100
SURGE FORWARD CURRENT I
0
10
0
75432
10 75432
1
10
2
CONDUCTION TIME
(CYCLES AT 60Hz)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC
0
10
1
2.0
10
1
5
327532
44
1.6
1.2
0
(°C/W)
trr (µs)
th (j-c)
0.8
0.4
–1
0
10
–3
10
–2
10
–1
0
10
444
753275327532
Feb.1999
PERFORMANCE CURVES (Diode part (D2))
MITSUBISHI TRANSISTOR MODULES
QM75E2Y/E3Y-H
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM FORWARD CHARACTERISTIC
3
10
7
5
Tj=25°C
3
F (A)
2
2
10
7
5
3
2
1
10
7
5
3
FORWARD CURRENT I
2
0
10
0.6 1.0 1.4 1.8 2.2
Zth (j–c) (°C/W)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC
1.0
10
0
0.8
0.6
0.4
0.2
0
–3
10
FORWARD VOLTAGE VF (V)
MAXIMUM SURGE CURRENT REVERSE RECOVERY CHARACTERISTICS
(VS. I
2
10
VR=300V
7
5
di/dt=–150A/µs
Tj=25°C
3
Tj=150°C
2
1
10
7
5
3
2
0
10
Irr (A), Qrr (µC)
7
5
3
2
–1
10
0
10
FSM (A)
SURGE FORWARD CURRENT I
2000
1800
1600
1400
1200
1000
800
600
400
200
0
10
0
75432
10 75432
1
10
2
CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT I
1
10
–2
10
TIME (s)
F) (TYPICAL)
1
10
5327532
44
7
10
–1
I
rr
Q
rr
0
10
753275327532
444
2
10
1
10
trr (µs)
0
10
–1
10
3
10
753275327532
10
t
rr
2
444
F (A)
REVERSE RECOVERY CHARACTERISTICS
(VS. di/dt) (TYPICAL)
2
10
7
VR=300V
5
F
=75A
I
3
Tj=25°C
2
Tj=150°C
1
10
7
5
3
2
0
10
Irr (A), Qrr (µC)
7
5
3
2
–1
10
10
0
10
1
10
di/dt (A/µs)
2
10
I
rr
Q
rr
1
10
rr (µs)
t
0
10
t
rr
–1
10
2
3
10
753275327532
444
Feb.1999
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