Mitsubishi QM75DY-2H Datasheet

MITSUBISHI TRANSISTOR MODULES
QM75DY-2H
HIGH POWER SWITCHING USE
INSULATED TYPE
IC Collector current .......................... 75A
V
CEX Collector-emitter voltage ......... 1000V
h
FE DC current gain...............................75
Insulated Type
UL Recognized Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
Inverters, Servo drives, UPS, DC motor controllers, NC equipment
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
108
C
1
Tab#110, t=0.5
M5
(7.5)
B E
E B
B
2
E
2 2
34
1 1
10.5 13 10.5
6.5
23
C2E
1
E
2
2
C
1
E
1
B
1
37
30
(7.5)
93
12 46.5
C2E
1
E
φ6.5
23 23 5
8158
LABEL
2
Feb.1999
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Symbol
CEX (SUS)
V VCEX VCBO VEBO IC –IC PC IB
–ICSM
Tj Tstg Viso
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current
Surge collector reverse current (forward diode current)
Junction temperature Storage temperature Isolation voltage
Mounting torque
Weight
Parameter
Conditions
C=1A, VEB=2V
I
EB=2V
V Emitter open Collector open DC DC (forward diode current)
C=25°C
T DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Main terminal screw M5
Mounting screw M6
Typical value
MITSUBISHI TRANSISTOR MODULES
QM75DY-2H
HIGH POWER SWITCHING USE
INSULATED TYPE
Ratings
1000 1000 1000
7 75 75
500
4
750
–40~+150 –40~+125
2500
1.47~1.96 15~20
1.96~2.94 20~30
250
Unit
V V V V A A
W
A
A
°C °C
V
N·m
kg·cm
N·m
kg·cm
g
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Symbol
CEX
I ICBO IEBO VCE (sat) VBE (sat) –VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R
Rth (c-f)
Parameter
Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain
Switching time
Thermal resistance (junction to case)
Contact thermal resistance (case to fin)
V
CE=1000V, VEB=2V CB=1000V, Emitter open
V
EB=7V
V
I
C=75A, IB=1.5A
–I
C=75A (diode forward voltage)
C=75A, VCE=2.8V/5V
I
CC=600V, IC=75A, IB1=–IB2=1.5A
V
Transistor part (per 1/2 module) Diode part (per 1/2 module)
Conductive grease applied (per 1/2 module)
Test conditions
Min.
— — — — — —
75/100
— — — — —
Limits
Typ.
— — — — — — — — — — — —
Max.
1.0
1.0
100
2.5
3.5
1.8 —
2.5 15
3.0
0.25
1.2
0.13
Unit
mA mA mA
V V V
µs µs
µs °C/W °C/W
°C/W
Feb.1999
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