QM600HD-M
MITSUBISHI TRANSISTOR MODULES
QM600HD-M
HIGH POWER SWITCHING USE
NON-INSULATED TYPE
• IC Collector current ........................ 600A
• V
CEX Collector-emitter voltage ........... 350V
• h
FE DC current gain............................. 500
• Non-Insulated Type
APPLICATION
Robotics, Forklifts, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
94
20
22
E
8
M4
80
E
17
BX
B
1214
64
2522
M6
φ5.5
48
C
B
62
E
E
BX
LABEL
8
5.5
21
25
27
Feb.1999
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Symbol
CEX (SUS)
V
VCEX
VCBO
VEBO
IC
–IC
PC
IB
–ICSM
Tj
Tstg
Viso
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
—
Mounting torque
—
Weight
Parameter
C=1A, VEB=2V
I
EB=2V
V
Emitter open
Collector open
DC
DC (forward diode current)
C=25°C
T
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Main terminal screw M6
Mounting screw M5
B(E) terminal screw M4
BX terminal screw M4
Typical value
Conditions
MITSUBISHI TRANSISTOR MODULES
QM600HD-M
HIGH POWER SWITCHING USE
NON-INSULATED TYPE
Ratings
350
350
400
10
600
—
2080
15
—
–40~+150
–40~+125
—
1.96~2.94
20~30
1.47~1.96
15~20
0.98~1.47
10~15
0.98~1.47
10~15
420
Unit
V
V
V
V
A
A
W
A
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
N·m
kg·cm
N·m
kg·cm
g
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Symbol
I
CEX
ICBO
IEBO
VCE (sat)
VBE (sat)
–VCEO
hFE
ton
ts
tf
Rth (j-c) Q
Rth (j-c) R
Rth (c-f)
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
V
CE=350V, VEB=2V
CB=400V, Emitter open
V
EB=10V
V
I
C=600A, IB=1.2A
–I
C=600A (diode forward voltage)
C=600A, VCE=2V
I
CC=200V, IC=600A, IB1=2A, –IB2=4A
V
Transistor part
Diode part
Conductive grease applied
Test conditions
Min.
—
—
—
—
—
—
500
—
—
—
—
—
—
Limits
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
2.0
800
2.0
2.5
—
—
3.0
15
3.0
0.06
—
0.05
Unit
mA
mA
mA
V
V
V
—
µs
µs
µs
°C/W
°C/W
°C/W
Feb.1999
PERFORMANCE CURVES
MITSUBISHI TRANSISTOR MODULES
QM600HD-M
HIGH POWER SWITCHING USE
NON-INSULATED TYPE
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
1000
C (A)
800
600
400
Tj=25°C
IB=2.0A
1.0A
0.4A
0.2A
0.08A
200
COLLECTOR CURRENT I
0
012345
10
7
5
4
FE
3
2
10
7
5
4
3
DC CURRENT GAIN h
2
10
10
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
4
3
VCE=2.0V
j
=25°C
T
Tj=125°C
2
1
2345 7 23457
10
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
0
10
7
5
4
3
B (A)
10
2
–1
VCE=2.0V
T
7
5
4
3
BASE CURRENT I
2
–2
10
1.2 1.4 1.6 1.8 2.0 2.2
j
=25°C
, VBE (sat) (V)SWITCHING TIME t
CE (sat)
10
SATURATION VOLTAGE V
10
10
7
5
4
3
2
7
5
4
3
2
–1
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
1
0
1
23457 23457
10
10
COLLECTOR CURRENT IC (A)BASE-EMITTER VOLTAGE VBE (V)
2
V
BE(sat)
V
IB=1.2A
2
CE(sat)
Tj=25°C
Tj=125°C
10
10
3
3
VCE (sat) (V)
VOLTAGE
COLLECTOR-EMITTER SATURATION
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
5
T
j
=25°C
j
=125°C
4
T
3
IC=600A
2
1
0
10
–2
–1
10
444
BASE CURRENT I
IC=400AIC=200A
0
10
B (A) COLLECTOR CURRENT IC (A)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
2
10
7
5
3
2
1
10
t
10
10
s
7
5
3
2
0
7
5
3
2
–1
1
10
10
t
f
t
on
2
on, ts, tf (µs)
1
10
753275327532
CC
=200V
V
IB1=2.0A
B2
=4.0A
–I
Tj=25°C
Tj=125°C
3
10
4
10
444
753275327532
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM600HD-M
HIGH POWER SWITCHING USE
NON-INSULATED TYPE
SWITCHING TIME VS. BASE
REVERSE BIAS SAFE OPERATING AREA
CURRENT (TYPICAL)
3
(µs)
1
10
s, tf
7
5
4
3
2
VCC=200V
0
IB1=2A
10
I
C=600A
7
SWITCHING TIME t
5
4
3
Tj=25°C
j=125°C
T
3457 2 3457
10
ts
tf
0
1
10 223
2000
1800
C (A)DERATING FACTOR (%)
1600
1400
1200
1000
800
600
400
COLLECTOR CURRENT I
200
0
0 100 200 300 400 500
COLLECTOR-EMITTER VOLTAGE VCE (V)BASE REVERSE CURRENT –IB2 (A)
FORWARD BIAS SAFE OPERATING AREA DERATING FACTOR OF F. B. S. O. A.
4
10
7
5
3
C (A)
2
3
10
7
5
3
2
2
10
7
5
3
COLLECTOR CURRENT I
TC =25°C
2
NON–REPETITIVE
1
10
0
10
444
DC
10
10ms
1
COLLECTOR-EMITTER VOLTAGE V
1ms
tw=100µs
2
10
3
10
753275327532
CE (V) CASE TEMPERATURE TC (°C)
100
90
80
SECOND
BREAKDOWN
AREA
70
60
50
40
COLLECTOR
DISSIPATION
30
20
10
0
0 20 60 100 120 16040 80 140
Tj=125°C
–IB2=4A
6A
(°C/ W)
Zth (j–c)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
0
10
0.08
7532
10
1
324
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
10
–3
–2
10
444
10
TIME (s)
–1
0
10
753275327532
Feb.1999
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