QM50TX-HB
MITSUBISHI TRANSISTOR MODULES
QM50TX-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
• IC Collector current .......................... 50A
• V
CEX Collector-emitter voltage ........... 600V
• h
FE DC current gain.............................750
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
AC motor controllers, UPS, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
68
8
B1 B2
B3 B4
11–M4
20 20
B5
B6
U
W
V
0.25
80±
94
(N)–
(P)+
10.5
1414
0
0.25
–0.2
86
74±
62.5
4–φ5.4±
(10)18.518.518.518.5(10)
0.1
B1
B3
10
P (+)
B5
LABEL
7
4
2
13 13
24.8
26
28.2
B2
U
B4
B6
V
W
N (–)
Feb.1999
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Symbol
CEX (SUS)
V
VCEX
VCBO
VEBO
IC
–IC
PC
IB
–ICSM
Tj
Tstg
Viso
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
—
Mounting torque
—
Weight
Parameter
Conditions
C=1A, VEB=2V
I
EB=2V
V
Emitter open
Collector open
DC
DC (forward diode current)
C=25°C
T
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Main terminal screw M4
Mounting screw M5
B(E) terminal screw M4
Typical value
MITSUBISHI TRANSISTOR MODULES
QM50TX-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Ratings
600
600
600
7
50
50
310
3
500
–40~+150
–40~+125
2500
0.98~1.47
10~15
1.47~1.96
15~20
0.98~1.47
10~15
520
Unit
V
V
V
V
A
A
W
A
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
N·m
kg·cm
g
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Symbol
I
CEX
ICBO
IEBO
VCE (sat)
VBE (sat)
–VCEO
hFE
ton
ts
tf
Rth (j-c) Q
Rth (j-c) R
Rth (c-f)
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Parameter
Test conditions
CE=600V, VEB=2V
V
CB=600V,Emitter open
V
EB=7V, Collector open
V
I
C=50A, IB=67mA
I
C=–50A (diode forward voltage)
C=50A, VCE=2.5V
I
CC=300V, IC=50A, IB1=100mA, –IB2=1.0A
V
Transistor part (per 1/6 module)
Diode part (per 1/6 module)
Conductive grease applied (per 1/6 module)
Min.
—
—
—
—
—
—
750
—
—
—
—
—
—
Limits
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
1.0
1.0
80
2.5
3.0
1.8
—
2.0
8.0
3.0
0.4
1.3
0.2
Unit
mA
mA
mA
V
V
V
—
µs
µs
µs
°C/W
°C/W
°C/W
Feb.1999
PERFORMANCE CURVES
MITSUBISHI TRANSISTOR MODULES
QM50TX-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
100
Tj=25°C
IB=150mA
C (A)
80
60
IB=50mA
IB=20mA
40
IB=10mA
20
COLLECTOR CURRENT I
0
01 23 4 5
IB=100mA
4
10
7
5
4
FE
3
2
3
10
7
5
4
3
DC CURRENT GAIN h
2
2
10
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
Tj=25°C
j
=125°C
T
0
10 23457110 23457210
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)
B (A)
10
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
0
VCE=2.5V
7
Tj=25°C
5
4
3
2
, VBE (sat) (V)SWITCHING TIME t
CE (sat)
10
1
7
5
4
3
2
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
V
BE(sat)
VCE=5.0V
VCE=2.5V
–1
10
7
5
4
3
BASE CURRENT I
2
–2
10
2.2 2.6 3.0 3.4 3.8
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
5
4
3
VCE (sat) (V)
2
VOLTAGE
COLLECTOR-EMITTER SATURATION
1
0
–3
10
IC=10A
–2
10
BASE CURRENT I
0
4.2
10
7
5
4
3
IB=67mA
2
–1
10
0
10 23457110 23457210
SATURATION VOLTAGE V
Tj=25°C
j
=125°C
T
V
CE(sat)
COLLECTOR CURRENT IC (A)BASE-EMITTER VOLTAGE VBE (V)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
1
10
Tj=25°C
T
j=125°C
7
5
4
3
2
on, ts, tf (µs)
0
IC=50A
IC=25A
10
7
5
4
3
2
–1
10
–1
10
B (A) COLLECTOR CURRENT IC (A)
0
10
753275327532
10 23457110 23457210
t
s
t
on
Tj=25°C
j
=125°C
T
0
t
f
VCC=300V
IB1=100mA
IB2=–1.0A
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM50TX-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME VS. BASE
REVERSE BIAS SAFE OPERATING AREA
CURRENT (TYPICAL)
1
10
7
5
4
(µs)
3
s, tf
2
0
10
7
VCC=300V
5
IB1=100mA
4
IC=50A
3
SWITCHING TIME t
2
–1
10
–1
10 23457010 23457110
ts
tf
Tj=25°C
j=125°C
T
160
Tj=125°C
140
C (A)DERATING FACTOR (%)COLLECTOR REVERSE CURRENT –I
120
100
80
IB2=–3.5A
60
40
20
COLLECTOR CURRENT I
0
0 100 800
300 400 500
200 600 700
COLLECTOR-EMITTER VOLTAGE VCE (V)BASE REVERSE CURRENT –IB2 (A)
FORWARD BIAS SAFE OPERATING AREA DERATING FACTOR OF F. B. S. O. A.
2
10
7
C (A)
COLLECTOR CURRENT I
5
3
2
1
10
7
5
3
2
0
10
7
5
3
TC=25°C
2
NON-REPETITIVE
–1
10
0
10
DC
10
1
COLLECTOR-EMITTER VOLTAGE V
10ms
1ms
10
100µs
500µs
2
3
10
753275327532
CE (V) CASE TEMPERATURE TC (°C)
100
90
80
70
60
50
40
30
20
10
0
0 16020
SECOND
BREAKDOWN
AREA
COLLECTOR
DISSIPATION
40 60 80 100 120 140
IB2=–1.5A
Zth (j–c) (°C/ W)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
0.5
10
0
23 57
10
1
10
3257
0.4
0.3
0.2
0.1
0
10
–3
10
–2
10
TIME (s)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
2
C (A)
10
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
2
7
5
4
3
2
1
10
7
5
4
3
2
0
–1
0
10
753275327532
10
0.2 0.6 1.0 1.4 1.8
Tj=25°C
j=125°C
T
2.2
COLLECTOR-EMITTER REVERSE VOLTAGE
CEO (V)
–V
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM50TX-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
500
400
300
CSM (A)
–I
200
100
0
0
10
SURGE COLLECTOR REVERSE CURRENT
10 75432
75432
1
10
2
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
2
10
7
5
3
2
1
10
I
rr
7
5
3
2
Q
10
10
rr
0
7
5
t
rr
3
2
–1
0
10
(A), Qrr (µc)
Irr
CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT I
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE PART)
2.0
10
0
23 57
10
1
75
32
1.6
1.2
10
2
10
1
10
VCC=300V
IB1=100mA
IB2=–1.0A
10
rr (µs)
t
0
Tj=25°C
j
=125°C
1
10
2
F (A)
T
–1
10
3
753275327532
10
Zth (j–c) (°C/ W)
0.8
0.4
0
10
–3
–2
7532
32
10
10
–1
0
753275
10
TIME (s)
Feb.1999
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