Mitsubishi QM50HA-HB Datasheet

QM50HA-HB
MITSUBISHI TRANSISTOR MODULES
QM50HA-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
IC Collector current .......................... 50A
V
CEX Collector-emitter voltage ........... 600V
h
FE DC current gain.............................750
Insulated Type
UL Recognized Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
18
14
φ5.3
3.5 3.5
B
53.5
43±
88
C
33
0.2
E
R6
B
5.3
36.5
3–M4
C
E
24MAX.
LABEL
4.5
7
22
Feb.1999
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Symbol
CEX (SUS)
V VCEX VCBO VEBO IC –IC PC IB
–ICSM
Tj Tstg Viso
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current
Surge collector reverse current (forward diode current)
Junction temperature Storage temperature Isolation voltage
Mounting torque
Weight
Parameter
Conditions
C=1A, VEB=2V
I
EB=2V
V Emitter open Collector open DC DC (forward diode current)
C=25°C
T DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Main terminal screw M4
Mounting screw M5
B(E) terminal screw M4
Typical value
MITSUBISHI TRANSISTOR MODULES
QM50HA-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Ratings
600 600 600
7 50 50
310
3
500
–40~+150 –40~+125
2500
0.98~1.47 10~15
1.47~1.96 15~20
0.98~1.47 10~15
90
Unit
V V V V A A
W
A
A
°C °C
V
N·m
kg·cm
N·m
kg·cm
N·m
kg·cm
g
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Symbol
I
CEX
ICBO IEBO VCE (sat) VBE (sat) –VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R
Rth (c-f)
Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain
Switching time
Thermal resistance (junction to case)
Contact thermal resistance (case to fin)
Parameter
Test conditions
CE=600V, VEB=2V
V
CB=600V, Emitter open
V
EB=7V, Collector open
V
I
C=50A, IB=67mA
I
C=–50A (diode forward voltage) C=50A, VCE=2.5V
I
CC=300V, IC=50A, IB1=100mA, –IB2=1.0A
V
Transistor part Diode part
Conductive grease applied
Min.
— — — — — —
750
— — — — —
Limits
Typ.
— — — — — — — — — — — —
Max.
1.0
1.0 80
2.5
3.0
1.8 —
2.0
8.0
3.0
0.4
1.3
0.15
Unit
mA mA mA
V V V
µs µs
µs °C/W °C/W
°C/W
Feb.1999
Loading...
+ 3 hidden pages