QM50E2Y/E3Y-H
MITSUBISHI TRANSISTOR MODULES
QM50E2Y/E3Y-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
• IC Collector current .......................... 50A
• V
CEX Collector-emitter voltage ........... 600V
• h
FE DC current gain............................... 75
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
DC chopper, DC motor controllers, Inverters
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
34
31
94
(7) (7)
13 10.510.5
M5
(8)
80
2020 27
LABEL
12
E
1
B
1
Tab#110,
t=0.5
φ6.5
6.5
22.5
2
Y)
(E
C
A
E
1
(E
3
Y)
C
1
1
D
2
D
2
D
1
D
1
1
B
1
E
1
K
E
1
1
E
1
B
1
ABSOLUTE MAXIMUM RATINGS (Transistor part including D1, Tj=25°C)
Symbol
CEX (SUS)
V
VCEX
VCBO
VEBO
IC
–IC
PC
IB
–ICSM
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Parameter
Conditions
C=1A, VEB=2V
I
EB=2V
V
Emitter open
Collector open
DC
DC (forward diode current)
C=25°C
T
DC
Peak value of one cycle of 60Hz (half wave)
ABSOLUTE MAXIMUM RATINGS (Diode part (D2), Tj=25°C)
Symbol
RRM
V
VRSM
VR (DC)
IDC
IFSM
2
t
I
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
DC current
Surge (non-repetitive) forward current
2
t
I
for fusing
Parameter
Conditions
DC circuit, resistive, inductive load
Peak value of one cycle of 60Hz (half wave)
Value for one cycle of surge current
MITSUBISHI TRANSISTOR MODULES
QM50E2Y/E3Y-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Ratings
600
600
600
7
50
50
310
3
500
Ratings
600
720
480
50
1000
4.2 × 10
3
Unit
W
Unit
A
V
V
V
V
A
A
A
A
V
V
V
A
A
2
s
ABSOLUTE MAXIMUM RATINGS (Common)
Symbol
j
T
Tstg
Viso
Junction temperature
Storage temperature
Isolation voltage
—
Mounting torque
—
Weight
Parameter
Charged part to case, AC for 1 minute
Main terminal screw M5
Mounting screw M6
Typical value
Conditions
ELECTRICAL CHARACTERISTICS (Transistor part including D1, Tj=25°C)
Symbol
I
CEX
ICBO
IEBO
VCE (sat)
VBE (sat)
–VCEO
hFE
ton
ts
tf
Rth (j-c) Q
Rth (j-c) R
Rth (c-f)
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
V
CE=600V, VEB=2V
CB=600V, Emitter open
V
EB=7V
V
I
C=50A, IB=0.65A
–I
C=50A (diode forward voltage)
C=50A, VCE=2V/5V
I
CC=300V, IC=50A, IB1=–IB2=1A
V
Transistor part
Diode part
Conductive grease applied
Test conditions
Min.
—
—
—
—
—
—
75/100
—
—
—
—
—
—
Ratings
–40~150
–40~125
2500
1.47~1.96
15~20
1.96~2.94
20~30
210
Limits
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
1.0
1.0
200
2.0
2.5
1.75
—
1.5
12
3.0
0.4
1.3
0.15
Unit
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
Unit
mA
mA
mA
V
V
V
—
µs
µs
µs
°C/W
°C/W
°C/W
Feb.1999