QM50DY-H
MITSUBISHI TRANSISTOR MODULES
QM50DY-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
• IC Collector current .......................... 50A
• V
CEX Collector-emitter voltage ........... 600V
• h
FE DC current gain...............................75
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
AC motor controllers, UPS, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
94
34
31
13
10.5 10.5
(8)
M5
C2E
80(7) (7)
20 20
1
E
2
LABEL
27
B
2
E
2
E
1
C
1
B
1
12
Tab#110, t=0.5
φ6.5
22.5
6.5
C2E
1
E
2
B
2
E
2
C
1
E
1
B
1
Feb.1999
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Symbol
CEX (SUS)
V
VCEX
VCBO
VEBO
IC
–IC
PC
IB
–ICSM
Tj
Tstg
Viso
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
—
Mounting torque
—
Weight
Parameter
Conditions
C=1A, VEB=2V
I
EB=2V
V
Emitter open
Collector open
DC
DC (forward diode current)
C=25°C
T
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Main terminal screw M5
Mounting screw M6
Typical value
MITSUBISHI TRANSISTOR MODULES
QM50DY-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Ratings
600
600
600
7
50
50
310
3
500
–40~+150
–40~+125
2500
1.47~1.96
15~20
1.96~2.94
20~30
210
Unit
V
V
V
V
A
A
W
A
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Symbol
CEX
I
ICBO
IEBO
VCE (sat)
VBE (sat)
–VCEO
hFE
ton
ts
tf
Rth (j-c) Q
Rth (j-c) R
Rth (c-f)
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
V
CE=600V, VEB=2V
CB=600V, Emitter open
V
EB=7V
V
I
C=50A, IB=0.65A
–I
C=50A (diode forward voltage)
C=50A, VCE=2V/5V
I
CC=300V, IC=50A, IB1=–IB2=1A
V
Transistor part (per 1/2 module)
Diode part (per 1/2 module)
Conductive grease applied (per 1/2 module)
Test conditions
Min.
—
—
—
—
—
—
75/100
—
—
—
—
—
—
Limits
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
1.0
1.0
200
2.0
2.5
1.75
—
1.5
12
3.0
0.4
1.3
0.15
Unit
mA
mA
mA
V
V
V
—
µs
µs
µs
°C/W
°C/W
°C/W
Feb.1999
PERFORMANCE CURVES
MITSUBISHI TRANSISTOR MODULES
QM50DY-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
C (A)
100
80
Tj=25°C
IB=1A
IB=0.65A
IB=0.3A
60
IB=0.2A
40
IB=0.1A
20
COLLECTOR CURRENT I
0
01 2345
10
7
5
4
FE
3
2
10
7
5
4
3
DC CURRENT GAIN h
2
10
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
3
2
Tj=25°C
j
=125°C
T
1
0
10 23457110 23457210
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
1
10
VCE=2.0V
7
Tj=25°C
5
4
3
B (A)
2
0
10
7
5
4
3
BASE CURRENT I
2
–1
10
1.2 1.6 2.0 2.4 2.8 3.2
, VBE (sat) (V)SWITCHING TIME t
CE (sat)
10
SATURATION VOLTAGE V
10
10
1
7
5
4
3
2
7
5
4
3
2
–1
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
V
BE(sat)
0
V
CE(sat)
IB=0.65A
Tj=25°C
j
=125°C
T
0
10 23457110 23457210
COLLECTOR CURRENT IC (A)BASE-EMITTER VOLTAGE VBE (V)
VCE=5.0V
VCE=2.0V
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
5
4
3
VCE (sat) (V)
2
VOLTAGE
1
IC=20A
COLLECTOR-EMITTER SATURATION
0
10
–2
10 75432
75432
BASE CURRENT I
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
10
2
1
Tj=25°C
j
=125°C
T
7
5
4
on, ts, tf (µs)
3
VCC=300V
IB1=–IB2=1A
10
2
0
IC=50A
7
5
IC=30A
–1
B (A) COLLECTOR CURRENT IC (A)
10
0
4
Tj=25°C
3
2
10 23457110 23457210
j
=125°C
T
0
t
s
t
on
t
f
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM50DY-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME VS. BASE
REVERSE BIAS SAFE OPERATING AREA
CURRENT (TYPICAL)
3
2
t
(µs)
1
10
s, tf
VCC=300V
7
IB1=1A
5
IC=50A
4
s
3
2
0
10
7
SWITCHING TIME t
5
4
3
–1
10 23457010 23457110
t
f
Tj=25°C
T
j
=125°C
160
Tj=125°C
140
C (A)DERATING FACTOR (%)COLLECTOR REVERSE CURRENT –I
120
100
80
60
40
COLLECTOR CURRENT I
20
0
0 200 800
400 600
COLLECTOR-EMITTER VOLTAGE VCE (V)BASE REVERSE CURRENT –IB2 (A)
FORWARD BIAS SAFE OPERATING AREA DERATING FACTOR OF F. B. S. O. A.
2
10
7
C (A)
COLLECTOR CURRENT I
5
3
2
1
10
7
5
3
2
0
10
7
5
3
TC=25°C
2
NON–REPETITIVE
–1
10
0
10
10
DC
1
COLLECTOR-EMITTER VOLTAGE V
10ms
1ms
10
100µs
500µs
2
3
10
444
753275327532
CE (V) CASE TEMPERATURE TC (°C)
100
90
80
70
60
50
40
30
20
10
0
0 16020
SECOND
BREAKDOWN
AREA
COLLECTOR
DISSIPATION
40 60 80 100 120 140
IB2=–1A
–3A
–5A
–10A
(°C/ W)
Zth (j–c)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
0
2345
10
0.5
1
10
7
32457
0.4
0.3
0.2
0.1
0
10
–3
–2
7
10
532
444
10
TIME (s)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
2
10
C (A)
7
5
4
3
2
1
10
7
5
4
3
2
0
–1
0
10
75327532
10
0.4 0.8 1.2 1.6 2.0
Tj=25°C
T
j
=125°C
2.4
COLLECTOR-EMITTER REVERSE VOLTAGE
CEO (V)
–V
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM50DY-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
500
400
300
CSM (A)
–I
200
100
0
0
10 75432
SURGE COLLECTOR REVERSE CURRENT
1
10 75432
10
2
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
2
10
7
5
3
2
1
10
I
rr
7
5
3
2
(A), Qrr (µc)
0
Irr
10
Q
rr
7
5
3
t
rr
2
–1
10
10
0
1
10
444
CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT IF (A)
TRANSIENT THERMAL IMPEDANCE
2.0
CHARACTERISTIC (DIODE )
0
10
23457
10
1
754
32
1.6
1.2
(°C/ W)
0.8
Zth (j–c)
Tj=25°C
T
j
=125°C
VCC=300V
IB1=–IB2=1A
2
10
2
10
1
10
rr (µs)
t
0
10
–1
10
3
10
753275327532
0.4
0
–3
10
–2
10
7532
444
32
10
–1
0
10
753275
TIME (s)
Feb.1999
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