Mitsubishi QM400HA-2H Datasheet
QM400HA-2H
MITSUBISHI TRANSISTOR MODULES
QM400HA-2H
HIGH POWER SWITCHING USE
INSULATED TYPE
• IC Collector current ........................ 400A
• V
CEX Collector-emitter voltage ......... 1000V
• h
FE DC current gain............................... 75
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
AC motor controllers, UPS, CVCF, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
90
3–M4
70
10
10
0.5
20.5
10
9
9
E
B
41.5
93
23.5
BX9EC
22
18
26
113
28
30.5
18
26
3
16.5
4–φ6.5
2–M8
E
BX
B
C
E
30
21.5
7
LABEL
37
Feb.1999
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Symbol
CEX (SUS)
V
VCEX
VCBO
VEBO
IC
–IC
PC
IB
–ICSM
Tj
Tstg
Viso
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
—
Mounting torque
—
Weight
Parameter
C=1A, VEB=2V
I
EB=2V
V
Emitter open
Collector open
DC
DC (forward diode current)
C=25°C
T
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Main terminal screw M8
Mounting screw M6
B(E) terminal screw M4
BX terminal screw M4
Typical value
Conditions
MITSUBISHI TRANSISTOR MODULES
QM400HA-2H
HIGH POWER SWITCHING USE
INSULATED TYPE
Ratings
1000
1000
1000
7
400
400
3120
20
4000
–40~+150
–40~+125
2500
8.83~10.8
90~110
1.96~2.94
20~30
0.98~1.47
10~15
0.98~1.47
10~15
870
Unit
V
V
V
V
A
A
W
A
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
N·m
kg·cm
N·m
kg·cm
g
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Symbol
I
CEX
ICBO
IEBO
VCE (sat)
VBE (sat)
–VCEO
hFE
ton
ts
tf
Rth (j-c) Q
Rth (j-c) R
Rth (c-f)
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
V
CE=1000V, VEB=2V
CB=1000V, Emitter open
V
EB=7V
V
I
C=400A, IB=8A
–I
C=400A (diode forward voltage)
C=400A, VCE=2.8V/5V
I
CC=600V, IC=400A, IB1=–IB2=8A
V
Transistor part
Diode part
Conductive grease applied
Test conditions
Min.
—
—
—
—
—
—
75/100
—
—
—
—
—
—
Limits
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
8.0
8.0
600
2.5
3.5
1.8
—
3.0
16
3.0
0.04
0.175
0.02
Unit
mA
mA
mA
V
V
V
—
µs
µs
µs
°C/W
°C/W
°C/W
Feb.1999
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