Mitsubishi QM30TX-H Datasheet

MITSUBISHI TRANSISTOR MODULES
QM30TX-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
IC Collector current .......................... 30A
V
CEX Collector-emitter voltage ........... 600V
h
FE DC current gain...............................75
Insulated Type
UL Recognized Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
AC motor controllers, UPS, DC motor controllers, NC equipment
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
68
B3 B4
B1
B2
20 20
U
(10) (10)18.5 18.5 18.5 18.5
B5 B6
W
V
80 94
(P)+
(N)
11–M4
10.5
4–φ5.4
14 14
62.5
74
86
B1
B2
B3
U
B4
B5
VW
B6
P(+)
N(–)
LABEL
7
13 13
26
28.2
24.8
4
2
Note: All Transistor Units are Darlingtons.
Feb.1999
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Symbol
CEX (SUS)
V VCEX VCBO VEBO IC –IC PC IB
–ICSM
Tj Tstg Viso
Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current
Surge collector reverse current (forward diode current)
Junction temperature Storage temperature Isolation voltage
Mounting torque
Weight
C=1A, VEB=2V
I
EB=2V
V Emitter open Collector open DC DC (forward diode current)
C=25°C
T DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Main terminal screw M4
Mounting screw M5
Typical value
Conditions
MITSUBISHI TRANSISTOR MODULES
QM30TX-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Ratings
600 600 600
7 30 30
250
1.8
300
–40~+150 –40~+125
2500
0.98~1.47 10~15
1.47~1.96 15~20
520
Unit
V V V V A A
W
A
A
°C °C
V
N·m
kg·cm
N·m
kg·cm
g
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Symbol
I
CEX
ICBO IEBO VCE (sat) VBE (sat) –VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R
Rth (c-f)
Parameter
Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain
Switching time
Thermal resistance (junction to case)
Contact thermal resistance (case to fin)
V
CE=600V, VEB=2V CB=600V, Emitter open
V
EB=7V
V
I
C=30A, IB=0.4A
–I
C=30A (diode forward voltage)
C=30A, VCE=2V/5V
I
CC=300V, IC=30A, IB1=–IB2=0.6A
V
Transistor part (per 1/6 module) Diode part (per 1/6 module)
Conductive grease applied (per 1/6 module)
Test conditions
Min.
— — — — — —
75/100
— — — — —
Limits
Typ.
— — — — — — — — — — — —
Max.
1.0
1.0
200
2.0
2.5
1.85 —
1.5 12
3.0
0.5
2.0
0.2
Unit
mA mA mA
V V V
µs µs
µs °C/W °C/W
°C/W
Feb.1999
Loading...
+ 3 hidden pages