Mitsubishi QM30TB-2HB Datasheet
QM30TB-2HB
MITSUBISHI TRANSISTOR MODULES
QM30TB-2HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
• IC Collector current .......................... 30A
• V
CEX Collector-emitter voltage ......... 1000V
• h
FE DC current gain.............................750
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
Inverters, Servo drives, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
127
7.5 21 7.5 21 7.5 16.5
2–φ5.5
184056
P
BuP
EuP
BuN
EuN
N
BvP
EvP
U
VW
BvN
EvN
BwP
EwP
BwN
EwN
25
19 28.5 28.5 21.5
BuP
EuP BvP EvP BwP EwP
P
UV
N
BuN EuN BvN EvN BwN EwN
98
110
Tab#110, t=0.5 Tab#250, t=0.8
W
26.5
LABEL
25.6
17.5
Note: All Transistor Units are 4-Stage Darlingtons.
Feb.1999
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Symbol
CEX (SUS)
V
VCEX
VCBO
VEBO
IC
–IC
PC
IB
–ICSM
Tj
Tstg
Viso
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
—
Mounting torque
—
Weight
Parameter
C=1A, VEB=2V
I
EB=2V
V
Emitter open
Collector open
DC
DC (forward diode current)
C=25°C
T
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Mounting screw M5
Typical value
Conditions
MITSUBISHI TRANSISTOR MODULES
QM30TB-2HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Ratings
1000
1000
1000
7
30
30
310
2
300
–40~+150
–40~+125
2500
1.47~1.96
15~20
500
Unit
V
V
V
V
A
A
W
A
A
°C
°C
V
N·m
kg·cm
g
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Symbol
I
CEX
ICBO
IEBO
VCE (sat)
VBE (sat)
–VCEO
hFE
ton
ts
tf
Rth (j-c) Q
Rth (j-c) R
Rth (c-f)
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
V
CE=1000V, VEB=2V
CB=1000V, Emitter open
V
EB=7V
V
I
C=30A, IB=40mA
–I
C=30A (diode forward voltage)
C=30A, VCE=4V
I
CC=600V, IC=30A, IB1=60mA, –IB2=0.6A
V
Transistor part (per 1/6 module)
Diode part (per 1/6 module)
Conductive grease applied (per 1/6 module)
Test conditions
Min.
—
—
—
—
—
—
750
—
—
—
—
—
—
Limits
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
2.0
50
4.0
4.0
1.8
—
2.5
15
3.0
0.4
1.5
0.25
Unit
mA
mA
mA
V
V
V
—
µs
µs
µs
°C/W
°C/W
°C/W
Feb.1999
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