Mitsubishi QM30TB-2H Datasheet

QM30TB-2H
MITSUBISHI TRANSISTOR MODULES
QM30TB-2H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
IC Collector current .......................... 30A
V
CEX Collector-emitter voltage ......... 1000V
FE DC current gain...............................75
Insulated Type
UL Recognized Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
AC motor controllers, DC motor controllers, NC equipment
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
127
7.5 21 7.5 21 7.5 16.5
2–φ5.5
184056
P
N
BuP
EuP
BuN EuN
BvP
EvP
U
VW
BvN EvN
BwP
EwP
BwN EwN
25
19 28.5 28.5
BuP
EuP BvP EvP BwP EwP
P
UV
N
BuN EuN BvN EvN BwN EwN
98
110
Tab#110, t=0.5 Tab#250, t=0.8
21.5
W
26.5
LABEL
17.5
25.6
Note: All Transistor Units are 3-Stage Darlingtons.
Feb.1999
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Symbol
CEX (SUS)
V VCEX VCBO VEBO IC –IC PC IB
–ICSM
Tj Tstg Viso
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current
Surge collector reverse current (forward diode current)
Junction temperature Storage temperature Isolation voltage
Mounting torque
Weight
Parameter
C=1A, VEB=2V
I
EB=2V
V Emitter open Collector open DC DC (forward diode current)
C=25°C
T DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Mounting screw M5
Typical value
Conditions
MITSUBISHI TRANSISTOR MODULES
QM30TB-2H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Ratings
1000 1000 1000
7 30 30
310
2
300
–40~+150 –40~+125
2500
1.47~1.96 15~20
500
Unit
V V V V A A
W
A
A
°C °C
V
N·m
kg·cm
g
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Symbol
I
CEX
ICBO IEBO VCE (sat) VBE (sat) –VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R
Rth (c-f)
Parameter
Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain
Switching time
Thermal resistance (junction to case)
Contact thermal resistance (case to fin)
V
CE=1000V, VEB=2V CB=1000V, Emitter open
V
EB=7V
V
I
C=30A, IB=0.6A
–I
C=30A (diode forward voltage)
C=30A, VCE=2.8V/5V
I
CC=600V, IC=30A, IB1=–IB2=0.6A
V
Transistor part (per 1/6 module) Diode part (per 1/6 module)
Conductive grease applied (per 1/6 module)
Test conditions
Min.
— — — — — —
75/100
— — — — —
Limits
Typ.
— — — — — — — — — — — —
Max.
1.0
1.0
200
2.5
3.5
1.8 —
2.5 15
3.0
0.4
1.5
0.2
Unit
mA mA mA
V V V
µs µs
µs °C/W °C/W
°C/W
Feb.1999
Loading...
+ 3 hidden pages