Mitsubishi QM30TB-24B Datasheet

QM30TB-24B
MITSUBISHI TRANSISTOR MODULES
QM30TB-24B
MEDIUM POWER SWITCHING USE
INSULATED TYPE
IC Collector current .......................... 30A
V
CEX Collector-emitter voltage ......... 1200V
FE DC current gain.............................750
Insulated Type
UL Recognized Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
Inverters, Servo drives, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
127
21 7.5 21 7.5
25
7.5
19
P
N
28.5 28.5 21.5
BuP EuP BvP EvP BwP EwP
UVW
BuN EuN BvN EvN BwN EwN
98
±0.2
110
16.5
2–φ5.5
184056
P
BuP EuP
BuN EuN
N
BvP EvP EwP
U
VW
BvN EvN EwN
BwP
BwN
26.5
LABEL
Tab#250, t=0.8
Note: All Transistor Units are 4-Stage Darlingtons.
17.5
Tab#110, t=0.5
25.6
7.5
Feb.1999
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Symbol
CEX (SUS)
V VCEX VCBO VEBO IC –IC PC IB
–ICSM
Tj Tstg Viso
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current
Surge collector reverse current (forward diode current)
Junction temperature Storage temperature Isolation voltage
Mounting torque
Weight
Parameter
C=1A, VEB=2V
I
EB=2V
V Emitter open Collector open DC DC (forward diode current)
C=25°C
T DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Mounting screw M5
Typical value
Conditions
MITSUBISHI TRANSISTOR MODULES
QM30TB-24B
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Ratings
1200 1200 1200
7 30 30
310
2
300
–40~+150 –40~+125
2500
1.47~1.96 15~20
500
Unit
V V V V A A
W
A
A
°C °C
V
N·m
kg·cm
g
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Symbol
I
CEX
ICBO IEBO VCE (sat) VBE (sat) –VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R
Rth (c-f)
Parameter
Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain
Switching time
Thermal resistance (junction to case)
Contact thermal resistance (case to fin)
V
CE=1200V, VEB=2V CB=1200V, Emitter open
V
EB=7V
V
I
C=30A, IB=40mA
–I
C=30A (diode forward voltage)
C=30A, VCE=4V
I
CC=600V, IC=30A, IB1=60mA, –IB2=0.6A
V
Transistor part (per 1/6 module) Diode part (per 1/6 module)
Conductive grease applied (per 1/6 module)
Test conditions
Min.
— — — — — —
750
— — — — —
Limits
Typ.
— — — — — — — — — — — —
Max.
2.0
2.0 50
4.0
4.0
1.8 —
2.5 15
3.0
0.4
1.5
0.25
Unit
mA mA mA
V V V
µs µs
µs °C/W °C/W
°C/W
Feb.1999
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