Mitsubishi QM30HC-2H Datasheet

QM30HC-2H

MITSUBISHI TRANSISTOR MODULES

QM30HC-2H

INDUCTION HEATER USE

NON-INSULATED TYPE

• IC Collector current .......................... 30A

• V

CEX Collector-emitter voltage ......... 1600V

• h

FE DC current gain............................... 75

• Non-Insulated Type

APPLICATION

Induction heater for cooking

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

62

38

φ4.5

26

5.2

BE

27

52

BEC (Case)

0.8

LABEL

5

15

2

10

Feb.1999

ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)

Symbol

CEX (SUS)

V

VCEX

VCBO

VEBO

IC

–IC

PC

IB

–ICSM

Tj

Tstg

Viso

Collector-emitter voltage

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Collector reverse current

Collector dissipation

Base current

Surge collector reverse current
(forward diode current)

Junction temperature

Storage temperature

Isolation voltage

—

Mounting torque

—

Weight

Parameter

C=1A, VEB=2V

I

EB=2V

V

Emitter open

Collector open

DC

DC (forward diode current)

C=25°C

T

DC

Peak value of one cycle of 60Hz (half wave)

Charged part to case, AC for 1 minute

Mounting screw M4

Typical value

Conditions

MITSUBISHI TRANSISTOR MODULES

QM30HC-2H

INDUCTION HEATER USE

NON-INSULATED TYPE

Ratings

—

1600

1600

10

30

30

310

5

300

–40~+150

–40~+125

—

0.98~1.47

10~15

50

Unit

V

V

V

V

A

A

W

A

A

°C
°C

V

N·m

kg·cm

g

ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)

Symbol

I

CEX

ICBO

IEBO

VCE (sat)

VBE (sat)

–VCEO

hFE

ton

ts

tf

Rth (j-c) Q

Rth (j-c) R

Rth (c-f)

Parameter

Collector cutoff current

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector-emitter reverse voltage

DC current gain

Switching time

Thermal resistance
(junction to case)

Contact thermal resistance
(case to fin)

V

CE=1600V, VEB=2V

CB=1600V, Emitter open

V

EB=10V

V

I

C=30A, IB=2A

–I

C=30A (diode forward voltage)

C=30A, VCE=5V

I

CC=100V, IC=30A, IB1=2A, IB2=–5A

V

Transistor part

Diode part

Conductive grease applied

Test conditions

Min.

—

—

—

—

—

—

75

—

—

—

—

—

—

Limits

Typ.

—

—

—

—

—

—

—

—

—

—

—

—

—

Max.

1.0

1.0

400

2.0

2.5

1.5

—

4.0

5.0

3.0

0.4

0.8

0.25

Unit

mA

mA

mA

V

V

V

—

µs
µs

µs
°C/W
°C/W

°C/W

Feb.1999