Mitsubishi QM30E3Y-2H, QM30E2Y-2H Datasheet

QM30E2Y/E3Y-2H

MITSUBISHI TRANSISTOR MODULES

QM30E2Y/E3Y-2H

MEDIUM POWER SWITCHING USE

INSULATED TYPE

• IC Collector current .......................... 30A

• V

CEX Collector-emitter voltage ......... 1000V

• h

FE DC current gain...............................75

• Insulated Type

• UL Recognized
Yellow Card No. E80276 (N)

File No. E80271

APPLICATION

DC chopper, DC motor controllers, Inverters

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

2

Y)

6.5

(E

C

A

E

1

(E

3

Y)

C

1

1

D

2

D

2

D

1

D

1

1

B

1

E

1

K

E

1

1

34

31

94

(7) (7)

23

13 10.510.5

M5

(8)

80

2323

LABEL

12

E

1

B

1

Tab#110,
t=0.5

φ6.5

22.5

E

1

B

1

Feb.1999

ABSOLUTE MAXIMUM RATINGS (Transistor part including D1, Tj=25°C)

Symbol

CEX (SUS)

V
VCEX
VCBO
VEBO
IC
–IC
PC
IB

–ICSM

Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current

Surge collector reverse current
(forward diode current)

Parameter

Conditions

C=1A, VEB=2V

I

EB=2V

V
Emitter open
Collector open
DC
DC (forward diode current)

C=25°C

T
DC

Peak value of one cycle of 60Hz (half wave)

ABSOLUTE MAXIMUM RATINGS (Diode part (D2), Tj=25°C)

Symbol

RRM

V
VRSM
VR (DC)
IDC
IFSM

2

t

I

Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
DC current
Surge (non-repetitive) forward current

2

t

I

for fusing

Parameter

Conditions

DC circuit, resistive, inductive load
Peak value of one cycle of 60Hz (half wave)
Value for one cycle of surge current

MITSUBISHI TRANSISTOR MODULES

QM30E2Y/E3Y-2H

MEDIUM POWER SWITCHING USE

INSULATED TYPE

Ratings

1000
1000
1000

7
30
30

310

2

300

Ratings

1000
1100

800

30

600

1.5 × 10

3

Unit

W

Unit

A

V
V
V
V
A
A

A

A

V
V
V
A
A

2

s

ABSOLUTE MAXIMUM RATINGS (Common)

Symbol

j

T
Tstg
Viso

Junction temperature
Storage temperature
Isolation voltage

—

Mounting torque

—

Weight

Parameter

Charged part to case, AC for 1 minute

Main terminal screw M5

Mounting screw M6

Typical value

Conditions

ELECTRICAL CHARACTERISTICS (Transistor part including D1, Tj=25°C)

Symbol

I

CEX

ICBO
IEBO
VCE (sat)
VBE (sat)
–VCEO
hFE
ton
ts
tf
Rth (j-c) Q
Rth (j-c) R

Rth (c-f)

Parameter

Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain

Switching time

Thermal resistance
(junction to case)

Contact thermal resistance
(case to fin)

V

CE=1000V, VEB=2V
CB=1000V, Emitter open

V

EB=7V

V

I

C=30A, IB=0.6A

–I

C=30A (diode forward voltage)

C=30A, VCE=2.8V/5V

I

CC=600V, IC=30A, IB1=–IB2=0.6A

V

Transistor part
Diode part

Conductive grease applied

Test conditions

Min.

—
—
—
—
—
—

75/100

—
—
—
—
—

—

Ratings
–40~+150
–40~+125

2500

1.47~1.96

15~20

1.96~2.94

20~30

210

Limits

Typ.

—
—
—
—
—
—
—
—
—
—
—
—

—

Max.

1.0

1.0

200

2.5

3.5

1.8
—

2.5
15

3.0

0.4

1.5

0.15

Unit

°C
°C

V

N·m

kg·cm

N·m

kg·cm

g

Unit

mA
mA
mA

V
V
V

—

µs
µs

µs
°C/W
°C/W

°C/W

Feb.1999