QM30DY-H
MITSUBISHI TRANSISTOR MODULES
QM30DY-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
• IC Collector current .......................... 30A
• V
CEX Collector-emitter voltage ........... 600V
• h
FE DC current gain...............................75
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
AC motor controllers, UPS, CVCF, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
94
34
13
10.5 10.5
M5
C2E1
80(7) (7)
20 20
C1
E2
12
27
φ6.5
B2
E2
E1
B1
Tab#110, t=0.5
C2E1
E2
B2
E2
C1
E1
B1
31
(8)
LABEL
6.5
22.5
Feb.1999
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Symbol
CEX (SUS)
V
VCEX
VCBO
VEBO
IC
–IC
PC
IB
–ICSM
Tj
Tstg
Viso
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
—
Mounting torque
—
Weight
Parameter
Conditions
C=1A, VEB=2V
I
EB=2V
V
Emitter open
Collector open
DC
DC (forward diode current)
C=25°C
T
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Main terminal screw M5
Mounting screw M6
Typical value
MITSUBISHI TRANSISTOR MODULES
QM30DY-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Ratings
600
600
600
7
30
30
250
1.8
300
–40~+150
–40~+125
2500
1.47~1.96
15~20
1.96~2.94
20~30
210
Unit
V
V
V
V
A
A
W
A
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Symbol
I
CEX
ICBO
IEBO
VCE (sat)
VBE (sat)
–VCEO
hFE
ton
ts
tf
Rth (j-c) Q
Rth (j-c) R
Rth (c-f)
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
V
CE=600V, VEB=2V
CB=600V, Emitter open
V
EB=7V
V
I
C=30A, IB=0.4A
–I
C=30A (diode forward voltage)
C=30A, VCE=2V/5V
I
CC=600V, IC=30A, IB1=–IB2=0.6A
V
Transistor part (per 1/2 module)
Diode part (per 1/2 module)
Conductive grease applied (per 1/2 module)
Test conditions
Min.
—
—
—
—
—
—
75/100
—
—
—
—
—
—
Limits
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
1.0
1.0
200
2.0
2.5
1.85
—
1.5
12
3.0
0.5
2.0
0.15
Unit
mA
mA
mA
V
V
V
—
µs
µs
µs
°C/W
°C/W
°C/W
Feb.1999
PERFORMANCE CURVES
MITSUBISHI TRANSISTOR MODULES
QM30DY-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
100
Tj=25°C
C (A)
80
60
40
20
COLLECTOR CURRENT I
0
01 2345
IB=2.0A
IB=1.0A
IB=0.5A
IB=0.3A
IB=0.1A
10
7
5
FE
4
3
2
10
7
5
4
3
DC CURRENT GAIN h
2
10
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
3
VCE=2.0V
2
Tj=25°C
j
=125°C
T
1
0
10 23457110 23457210
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)
B (A)
10
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
1
7
Tj=25°C
5
VCE=2.0V
4
3
2
, VBE (sat) (V)SWITCHING TIME t
CE (sat)
10
1
7
5
4
3
2
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
V
BE(sat)
VCE=5.0V
0
10
7
5
4
3
BASE CURRENT I
2
–1
10
1.0 1.4 1.8 2.2 2.6
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
5
4
3
VCE (sat) (V)
2
VOLTAGE
1
COLLECTOR-EMITTER SATURATION
0
10
–2
IC=10A
75432
10 75432
BASE CURRENT I
0
10
3.0
7
5
4
3
IB=0.4A
2
–1
10
0
10 23457110 23457210
SATURATION VOLTAGE V
Tj=25°C
j
=125°C
T
V
CE(sat)
COLLECTOR CURRENT IC (A)BASE-EMITTER VOLTAGE VBE (V)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
1
Tj=25°C
j
=125°C
T
10
7
7
5
4
t
s
3
3
2
on, ts, tf (µs)
VCC=300V
IB1=–IB2=0.6A
0
10
7
7
t
f
IC=30A
5
t
on
4
3
IC=20A
–1
B (A) COLLECTOR CURRENT IC (A)
10
0
2
Tj=25°C
T
j
–1
10
10 23457110 23457210
=125°C
0
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM30DY-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME VS. BASE
REVERSE BIAS SAFE OPERATING AREA
CURRENT (TYPICAL)
3
2
(µs)
1
10
s, tf
t
s
7
5
4
VCC=300V
IB1=0.6A
IC=30A
3
2
t
f
0
10
7
SWITCHING TIME t
5
4
3
–1
10 23457010 23457110
Tj=25°C
T
j
=125°C
70
60
C (A)DERATING FACTOR (%)COLLECTOR REVERSE CURRENT –I
50
40
30
20
10
COLLECTOR CURRENT I
Tj=125°C
0
0
100
200 400
300 500 600
COLLECTOR-EMITTER VOLTAGE VCE (V)BASE REVERSE CURRENT –IB2 (A)
FORWARD BIAS SAFE OPERATING AREA DERATING FACTOR OF F. B. S. O. A.
2
10
7
5
3
C (A)
COLLECTOR CURRENT I
2
1
10
7
5
3
2
0
10
7
5
3
TC=25°C
2
NON–REPETITIVE
–1
10
0
10
DC
1
10
444
COLLECTOR-EMITTER VOLTAGE V
1m
10
100µ
500µ
S
S
S
2
3
10
753275327532
CE (V) CASE TEMPERATURE TC (°C)
100
90
80
70
60
50
40
30
20
10
0
0 16020
SECOND
BREAKDOWN
AREA
COLLECTOR
DISSIPATION
40 60 80 100 120 140
IB2=
–1A
–3A
–5A
700
(°C/ W)
Zth (j–c)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
0
10
23457
0.5
10
1
10
75324
0.4
0.3
0.2
0.1
0
–3
10
–2
10
444
10
TIME (s)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
2
C (A)
10
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
2
7
5
4
3
2
1
10
7
5
4
3
2
0
–1
0
10
753275327532
10
0.4 0.8 1.2 1.6 2.0 2.4
Tj=25°C
T
j
=125°C
COLLECTOR-EMITTER REVERSE VOLTAGE
CEO (V)
–V
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM30DY-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
500
400
300
CSM (A)
–I
200
100
0
0
10
SURGE COLLECTOR REVERSE CURRENT
75432
10 75432
1
10
2
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
2
10
VCC=300V
7
5
IB1=–IB2=0.6A
3
2
1
10
7
5
I
rr
3
2
(A), Qrr (µc)
0
Irr
10
7
5
Q
rr
3
2
t
rr
–1
10
10
0
1
10
444
CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT IF (A)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE )
2.0
10
0
23457
10
1
32
1.6
1.2
(°C/ W)
0.8
Zth (j–c)
10
Tj=25°C
T
j
=125°C
2
2
10
1
10
rr (µs)
t
0
10
–1
10
3
10
753275327532
0.4
0
10
–3
–2
10
444
7532
32
10
–1
TIME (s)
0
10
753275
Feb.1999
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