Mitsubishi QM150DY-24BK Datasheet

QM150DY-24BK
MITSUBISHI TRANSISTOR MODULES
QM150DY-24BK
HIGH POWER SWITCHING USE
INSULATED TYPE
IC Collector current ........................ 150A
V
CEX Collector-emitter voltage ......... 1200V
FE DC current gain.............................750
Insulated Type
UL Recognized Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
Inverters, Servo drives, UPS, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
108
4–φ6.5
30
9
3–M6
B2X
C2E1
B1X
15.3
8
3
17
25
93±
0.25
B2X
B2E2
E1B1
8
1.8
6
0.25
15
62
48±
6
10.5
Tab#110, t=0.5
B1X
C2E1
E2
E2
C1
14
25 21.5
17
8
8
17
3
B2 E2
C1
E1 B1
LABEL
16 7
30
9.5
37
Feb.1999
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Symbol
CEX (SUS)
V VCEX VCBO VEBO IC –IC PC IB
–ICSM
Tj Tstg Viso
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current
Surge collector reverse current (forward diode current)
Junction temperature Storage temperature Isolation voltage
Mounting torque
Weight
Parameter
Conditions
C=1A, VEB=2V
I
EB=2V
V Emitter open Collector open DC DC (forward diode current)
C=25°C
T DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Main terminal screw M6
Mounting screw M6
Typical value
MITSUBISHI TRANSISTOR MODULES
QM150DY-24BK
HIGH POWER SWITCHING USE
INSULATED TYPE
Ratings
1200 1200 1200
7 150 150
1000
8
1500
–40~+150 –40~+125
2500
1.96~2.94 20~30
1,96~2.94
20~30
470
Unit
V V V V A A
W
A
A
°C °C
V
N·m
kg·cm
N·m
kg·cm
g
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Symbol
CEX
I ICBO IEBO VCE (sat) VBE (sat) –VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R
Rth (c-f)
Parameter
Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain
Switching time
Thermal resistance (junction to case)
Contact thermal resistance (case to fin)
V
CE=1200V, VEB=2V CB=1200V, Emitter open
V
EB=7V
V
I
C=150A, IB=200mA
–I
C=150A (diode forward voltage)
C=150A, VCE=4V
I
CC=600V, IC=150A, IB1=0.3A, –IB2=3A
V
Transistor part (per 1/2 module) Diode part (per 1/2 module)
Conductive grease applied (per 1/2 module)
Test conditions
Min.
— — — — — —
750
— — — — —
Limits
Typ.
— — — — — — — — — — — —
Max.
4.0
4.0
100
4.0
4.0
1.8 —
2.5 15
3.0
0.125
0.6
0.075
Unit
mA mA mA
V V V
µs µs
µs °C/W °C/W
°C/W
Feb.1999
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