Mitsubishi QM10HB-2H Datasheet
QM10HB-2H
MITSUBISHI TRANSISTOR MODULES
QM10HB-2H
DRIVE USE FOR HIGH POWER TRANSISTOR
INSULATED TYPE
• IC Collector current .......................... 10A
• V
CEX Collector-emitter voltage ......... 1000V
• h
FE DC current gain................................. 5
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
Base driver for High voltage transistor modules
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
φ3.2
28
3.5
LABEL
1.6 2.2
1.1
BCE
7.3
7.3
4
20.5
3
2814.5
(42.5)
0.5
B
2.5
5.5
C
E
9
Feb.1999
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Symbol
CEX (SUS)
V
VCEX
VCBO
VEBO
IC
PC
IB
Tj
Tstg
Viso
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector dissipation
Base current
Junction temperature
Storage temperature
Isolation voltage
—
Mounting torque
—
Weight
Parameter
Conditions
C=1A, VEB=2V
I
EB=2V
V
Emitter open
Collector open
DC
C=25°C
T
DC
Charged part to case, AC for 1 minute
Mounting screw M3
Typical value
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Symbol
CEX
I
ICBO
IEBO
VCE (sat)
VBE (sat)
hFE
ton
ts
tf
Rth (j-c) Q
Rth (c-f)
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
Switching time
Thermal resistance (junction to case)
Contact thermal resistance
(case to fin)
V
CE=1000V, VEB=2V
CB=1000V, Emitter open
V
EB=7V
V
I
C=5A, IB=1A
C=5A, VCE=1V
I
CC=600V, IC=5A, IB1=–IB2=1A
V
Transistor part
Conductive grease applied
Test conditions
MITSUBISHI TRANSISTOR MODULES
QM10HB-2H
DRIVE USE FOR HIGH POWER TRANSISTOR
INSULATED TYPE
Unit
V
V
V
V
A
W
A
°C
°C
V
N·m
kg·cm
g
Unit
mA
mA
mA
V
V
—
µs
µs
µs
°C/W
°C/W
Min.
—
—
—
—
—
5
—
—
—
—
—
Ratings
1000
1000
1000
7
10
100
2
–40~+150
–40~+125
2500
0.59~0.98
6~10
40
Limits
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
1.0
1.0
150
1.0
1.5
—
1.5
7.0
2.0
1.2
0.4
Feb.1999
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