Mitsubishi QM100TX1-HB Datasheet
QM100TX1-HB
MITSUBISHI TRANSISTOR MODULES
QM100TX1-HB
HIGH POWER SWITCHING USE
INSULATED TYPE
• IC Collector current ........................ 100A
• V
CEX Collector-emitter voltage ........... 600V
• h
FE DC current gain.............................750
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
Inverters, Servo drives, UPS, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
68
8
B1 B2
B3 B4
11–M4
20 20
B5
B6
U
W
V
0.25
80±
94
(P)+
10.5
1414
0
0.25
–0.2
86
74±
4–φ5.4±
62.5
0.1
B1
B3
10
P (+)
B5
(N)–
(10)18.518.518.518.5(10)
LABEL
7
4
2
13 13
24.8
26
28.2
B2
U
B4
B6
V
W
N (–)
Feb.1999
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Symbol
CEX (SUS)
V
VCEX
VCBO
VEBO
IC
–IC
PC
IB
–ICSM
Tj
Tstg
Viso
—
—
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
C=1A, VEB=2V
I
EB=2V
V
Emitter open
Collector open
DC
DC (forward diode current)
C=25°C
T
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Main terminal screw M4
Mounting screw M5
B(E) teminal screw M4
Typical value
Conditions
MITSUBISHI TRANSISTOR MODULES
QM100TX1-HB
HIGH POWER SWITCHING USE
INSULATED TYPE
Ratings
600
600
600
7
100
350
4.5
100
1000
–40~+150
–40~+125
2500
0.98~1.47
10~15
1.47~1.96
15~20
0.98~1.47
10~15
520
Unit
V
V
V
V
A
A
W
A
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
N·m
kg·cm
g
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Symbol
I
CEX
ICBO
IEBO
VCE (sat)
VBE (sat)
–VCEO
hFE
ton
ts
tf
Rth (j-c) Q
Rth (j-c) R
Rth (c-f)
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
V
CE=600V, VEB=2V
CB=600V, Emitter open
V
EB=7V, Collector open
V
I
C=100A, IB=150mA
I
C=–100A (diode forward voltage)
C=100A, VCE=2.5V
I
CC=300V, IC=100A, IB1=150mA, –IB2=2.0A
V
Transistor part (per 1/6 module)
Diode part (per 1/6 module)
Conductive grease applied (per 1/6 module)
Test conditions
Min.
—
—
—
—
—
—
750
—
—
—
—
—
—
Limits
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
1.0
1.0
150
2.5
3.0
1.8
—
2.0
8.0
3.0
0.35
1.3
0.2
Unit
mA
mA
mA
V
V
V
—
µs
µs
µs
°C/W
°C/W
°C/W
Feb.1999
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