MITSUBISHI PM150CLA120 Technical data

MITSUBISHI <INTELLIGENT POWER MODULES>

MITSUBISHI <INTELLIGENT POWER MODULES>

PM150CLA120

PM150CLA120

PM150CLA120

FLAT-BASE TYPE

FLAT-BASE TYPE

INSULATED PACKAGE

INSULATED PACKAGE

FEATURE

a) Adopting new 5th generation IGBT (CSTBT) chip, which

performance is improved by 1µm fine rule process.
For example, typical V

b) I adopt the over-temperature conservation by Tj detection of

CSTBT chip, and error output is possible from all each con­servation upper and lower arm of IPM.

•3φ 150A, 1200V Current-sense IGBT type inverter

• Monolithic gate drive & protection logic

• Detection, protection & status indication circuits for, short­circuit, over-temperature & under-voltage (P-Fo available
from upper arm devices)

• Acoustic noise-less 30kW class inverter application

• UL Recognized Yellow Card No.E80276(N)

ce(sat)=1.9V @Tj=125°C

File No.E80271

APPLICATION

General purpose inverter, servo drives and other motor controls

PACKAGE OUTLINES Dimensions in mm

135

6-M5 Nuts

13

4-φ5.5
Mounting Holes

6.05 6.05

26 26 40.5 11.7

10.5

6

18

11

WVU

6-2 3-2

10

19

2-φ2.5

110±

10.5

71.5

66.5

13

19- 0.5

0.5

10.5 13

3-2 3-2

10 103.25

9 5 1

3.25

30.15 11

13(Screwing Depth)

6

18.7

6.056.05

B

10.5

N

10.510.5

P

20 20 21.5

16.5

110

0.5

78±

4

LABEL

+1

-0.5

24.1

33.6

Terminal code

34.7

1. VUPC

2. UFO

3. UP

4. VUP1

5. VVPC

6. VFO

7. VP

8. VVP1

9. VWPC

10. WFO

11. WP

12. VWP1

13. VNC

14. VN1

15. NC

16. UN

17. VN

18. WN

19. Fo

May 2005

INTERNAL FUNCTIONS BLOCK DIAGRAM

V

NC

Fo

V

NC

V

N1

W

N

N

MITSUBISHI <INTELLIGENT POWER MODULES>

PM150CLA120

FLAT-BASE TYPE

INSULATED PACKAGE

WPV

U

N

V

WPC

WF

WP1

O

V

VPC

VPV

VF

VP1

O

V

UPC

UPV

UF

UP1

O

1.5k

Gnd In Fo Vcc

Gnd Si Out OT

NC N W V U P

Gnd In Fo Vcc

Gnd Si Out OT

Gnd In Fo Vcc

Gnd Si Out OT

1.5k 1.5k 1.5k

Gnd In Fo Vcc

Gnd Si Out OT

Gnd In Fo Vcc

Gnd Si Out OT

Gnd In Fo Vcc

Gnd Si Out OT

MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
INVERTER PART

Symbol Parameter Condition Ratings Unit

VCES

±IC
±ICP

PC
Tj

Collector-Emitter Voltage
Collector Current
Collector Current (Peak)
Collector Dissipation
Junction Temperature

D = 15V, VCIN = 15V

V

C = 25°C

T
T

C = 25°C
C = 25°C (Note-1)

T

1200

150
300

1041

–20 ~ +150

V
A
A

W
°C

CONTROL PART

Symbol Parameter Condition Ratings Unit

VD

VCIN

VFO

IFO

Supply Voltage

Input Voltage

Fault Output Supply Voltage

Fault Output Current

Applied between : V

Applied between : UP-VUPC, VP-VVPC

Applied between : UFO-VUPC, VFO-VVPC, WFO-VWPC

Sink current at UFO, VFO, WFO, FO terminals

UP1-VUPC

VVP1-VVPC, VWP1-VWPC, VN1-VNC

WP-VWPC, UN • VN • WN-VNC

FO-VNC

20

20

20

20

May 2005

V

V

V

mA

TOTAL SYSTEM

CC(PROT)

V

CC(surge)

V
Tstg
Viso

ParameterSymbol
Supply Voltage Protected by
SC
Supply Voltage (Surge)
Storage Temperature

Isolation Voltage

V

D = 13.5 ~ 16.5V, Inverter Part,

T

j = +125°C Start

Applied between : P-N, Surge value

60Hz, Sinusoidal, Charged part to Base, AC 1 min.

Condition

THERMAL RESISTANCES

Symbol

Rth(j-c)Q
Rth(j-c)F

Rth(c-f)

Junction to case Thermal
Resistances

Contact Thermal Resistance

Parameter

Inverter IGBT (per 1 element) (Note-1)
Inverter FWDi (per 1 element) (Note-1)
Case to fin, (per 1 module)
Thermal grease applied (Note-1)

* If you use this value, Rth(f-a) should be measured just under the chips.

Condition

MITSUBISHI <INTELLIGENT POWER MODULES>

PM150CLA120

FLAT-BASE TYPE

INSULATED PACKAGE

Min.

—
—

—

Ratings

800

1000

–40 ~ +125

2500

Limits

Typ. Max.

—
—

—

0.12*

0.20*

0.023

Unit

V

V

°C

rms

V

Unit

°C/W

(Note-1) T

axis

C (under the chip) measurement point is below.

IGBT

23.0

56.3

UP

FWDi

23.0

43.1

arm

X
Y

VP WP UN VN WN

IGBT

FWDi

IGBT

57.5

56.5

56.3

43.1

87.5

56.3

FWDi

86.5

43.1

IGBT

37.0

29.1

FWDi

38.0

42.4

Bottom view

X

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)
INVERTER PART

= 15V

Condition

(Fig. 5)

Symbol

V

CE(sat)

VEC
ton
trr
tc(on)
toff
tc(off)

ICES

Parameter

Collector-Emitter
Saturation Voltage

FWDi Forward Voltage

Switching Time

Collector-Emitter
Cutoff Current

D = 15V, IC = 150A

V
V

CIN = 0V (Fig. 1)

C = 150A, VD = 15V, VCIN = 15V (Fig. 2)

–I

D = 15V, VCIN = 0V↔15V

V
V

CC = 600V, IC = 150A
j = 125°C

T
Inductive Load (Fig. 3, 4)

VCE = V

CES

, V

CIN

IGBT

70.5

29.1

Y

FWDi

71.5

42.4

j = 25°C

T

j = 125°C

T

j = 25°C

T

j = 125°C

T

(Unit : mm)

IGBT

FWDi

100.5

101.5

29.1

42.4

Min. Typ. Max.

—
—
—

0.5

—
—
—
—
—
—

Limits

1.8

1.9

2.5

1.0

0.5

0.4

2.0

0.7

—
—

2.3

2.4

3.5

2.5

0.8

1.0

3.0

1.2

10

Unit

V

V

µs

1

mA

May 2005