Mitsubishi PM100CVA120 Datasheet

MITSUBISHI INTELLIGENT POWER MODULES

PM100CVA120

FLAT-BASE TYPE

INSULATED PACKAGE

TERMINAL CODE

1. W

FO

11. U

2. V

3. W

4. V

5. V

6. V

7. V

8. V

9. U

10. V

WPC

P
WP1
FO
VPC
P
VP1
FO

UPC

CCφ

P

12. V

UP1

13. NC

14. F

O

15. VNC

16. VN1

17. UN

18. VN

19. WN

AA - TYP.

(4 PLACES)

Z - TYP.

BB SQ PIN - TYP.

(19 PLACES)

DETAIL A

VNC

VN1

Rf

F

O

O

Rf

NC

GND

GND

O

= 1.5k OHM

WN

F

O

V

CC

IN

TEMP

OUT

Si

TH

GND

GND

VN

F

O

V

CC

IN

OUT

Si

UN

GND

IN

GND

NWVUP

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 4.72 120.0
B 4.02 102.0
C 0.95+0.04/-0.02 24.1+1.0/-0.5
D 4.13±0.010 105.0±0.25
E 3.43±0.010 87.0±0.25
F 0.16 4.0
G 0.95 24.1
H 0.42 10.6

J 0.87 22.0
K 3.51±0.02 89.2±0.5
L 0.47 12.0
M 0.48 12.3
N 0.77 19.5
P 0.30 7.5

B K E

C

Y

F

O

V

CC

OUT

Si

UVW

N

V

W

WPC

W

FO

P

F

O

GND

IN

GND

Si

Dimensions Inches Millimeters

Q 0.59 15.1
R 0.72 18.25
S M5 Metric M5
T 0.22 Dia. Dia. 5.5
U 0.56±0.010 14.1±0.25
V 1.72±0.012 43.57±0.3

W 0.57±0.012 14.6±0.3

X 3.35 85.2
Y 0.85 21.6

Z 0.10±0.010 2.54±0.25
AA 1.37±0.010 3.49±0.25
BB 0.02 SQ 0.64 SQ

CC

A
DP

NP

Q

L - TYP.

M

1234

5678

9101112

1314 1516

17 1819

M

J

TYP.

S NUTS (5 TYP.)

XW

OUT

V

V

GND

GND

V

VPC

V

FO

P

F

O

IN

OUT

Si

WP1

V

CC

V

V

UPC

VP1

GND

V

CC

GND

0.12+0.04/-0.02 3.0+1.0/-0.5

R

U

U

FO

P

F

O

IN

OUT

Si

U

T (4 TYP.)

SEE
DETAIL A

H

G

F

V

UP1

V

CC

P

V

U

Description:

Mitsubishi Intelligent Power Mod­ules are isolated base modules de­signed for power switching applica­tions operating at frequencies to
20kHz. Built-in control circuits pro­vide optimum gate drive and pro­tection for the IGBT and free-wheel
diode power devices.

Features:

u Complete Output Power

Circuit

u Gate Drive Circuit
u Protection Logic

– Short Circuit
– Over Temperature
– Under Voltage

Applications:

u Inverters
u UPS
u Motion/Servo Control
u Power Supplies

Ordering Information:

Example: Select the complete
part number from the table below

-i.e. PM75CVA120 is a 1200V,
75 Ampere Intelligent Power Mod­ule.

Type Current Rating V

Amperes Volts (x 10)

PM 100 120

CES

Sep.1998

MITSUBISHI INTELLIGENT POWER MODULES

PM100CVA120

FLAT-BASE TYPE

INSULATED PACKAGE

Absolute Maximum Ratings, Tj = 25°C unless otherwise specified

Ratings Symbol PM100CVA120 Units
Power Device Junction Temperature T
Storage Temperature T
Case Operating Temperature T
Mounting Torque, M5 Mounting Screws — 2.5 ~ 3.5 N · m
Mounting Torque, M5 Main Terminal Screws — 2.5 ~ 3.5 N · m
Module Weight (Typical) — 730 Grams
Supply Voltage (Applied between P - N) V
Supply Voltage Protected by SC (VD = 13.5 ~16.5V, Inverter Part, Tj = 125°C Start) V
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V

j

stg

C

CC(surge)

CC(prot.)

iso

Control Sector

Supply Voltage (Applied between V
Input Voltage (Applied between UP-V
Fault Output Supply Voltage (
Fault Output Current (Sink Current at UFO, VFO, WFO and FO Terminal) I

UP1-VUPC

UPC

Applied between UFO-V

, VP-V

, V

VP1-VVPC

VPC

, WP-V

, VFO-V

UPC

, V

WP1-VWPC

, UN · VN · WN-VNC)V

WPC

VPC

, VN1-VNC)V

, WFO-V

, FO-VNC)V

WPC

D

CIN

FO

FO

-20 to 150 °C

-40 to 125 °C

-20 to 100 °C

1000 Volts

800 Volts

2500 Vrms

20 Volts
20 Volts
20 Volts
20 mA

IGBT Inverter Sector

Collector-Emitter Voltage (VD = 15V, V
Collector Current, (TC = 25°C) I
Peak Collector Current, (TC = 25°C) I
Collector Dissipation (TC = 25°C) P

= 15V) V

CIN

CES

C

CP

C

1200 Volts

100 Amperes
200 Amperes
595 Watts

Sep.1998

MITSUBISHI INTELLIGENT POWER MODULES

PM100CVA120

FLAT-BASE TYPE

INSULATED PACKAGE

Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Control Sector

Short Circuit Trip Level SC -20°C ≤ Tj ≤ 125°C, VD = 15V 145 — — Amperes
Short Circuit Current Delay Time t
Over T emperature Protection OT Trip Level 100 110 120 °C
(VD = 15V, Lower Arm) OT
Supply Circuit Under Voltage Protection UV Trip Level 11.5 12.0 12.5 Volts
(-20°C ≤ Tj ≤ 125°C) UV
Circuit Current I

Input ON Threshold Voltage V
Input OFF Threshold Voltage V
Fault Output Current I

Minimum Fault Output Pulse Width t

*Fault output is given only when the internal SC, OT, and UV protections circuits of either an upper-arm or a lower-arm device operate to protect it.

off(SC)

D

th(on)
th(off)

FO(H)

I

FO(L)

FO

r

r

VD = 15V, V

V

= 15V, V

D

Applied between UP-V

WP-V

VD = 15V — 10 — µs

Reset Level 85 95 105 °C

Reset Level — 12.5 — Volts

= 15V, VN1-V

CIN

= 15V, V

CIN

UPC

, UN · VN · WN-V

WPC

VD = 15V, VFO = 15V* — — 0.01 mA
VD = 15V, VFO = 15V* — 10 15 mA

VD = 15V* 1.0 1.8 — ms

NC

XP1-VXPC

, VP-V

VPC

NC

—4055mA
—1318mA

, 1.2 1.5 1.8 Volts

1.7 2.0 2.3 Volts

Sep.1998

MITSUBISHI INTELLIGENT POWER MODULES

PM100CVA120

FLAT-BASE TYPE

INSULATED PACKAGE

Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

IGBT Inverter Sector

Collector-Emitter Cutoff Current I

FWDi Forward Voltage V
Collector-Emitter Saturation Voltage V

Inductive Load Switching Times t

CES

EC

CE(sat)

on

t

rr

t

C(on)

t

off

t

C(off)

VCE = V

VCE = V

-IC = 100A, VD = 15V, V
VD = 15V, V

, VD = 15V, Tj = 25°C — — 1.0 mA

CES

, VD = 15V, Tj = 125°C — — 10.0 mA

CES

= 15V — 2.50 3.50 Volts

CIN

= 0V, IC = 100A, — 2.65 3.30 Volts

CIN

Pulsed, Tj = 25°C

VD = 15V, V

= 0V, IC = 100A, — 2.75 3.35 Volts

CIN

Pulsed, Tj = 125°C

0.4 0.9 2.3 µs

VD = 15V , V

= 0V ↔ 15V — 0.2 0.3 µs

CIN

VCC = 600V , IC = 100A, — 0.4 1.0 µs

Tj = 125°C — 2.4 3.4 µs

— 0.7 1.2 µs

Thermal Characteristics

Characteristic Symbol Condition Min. Typ. Max. Units
Junction to Case Thermal Resistance R

Contact Thermal Resistance R

th(j-c)Q

R

th(j-c)F

th(c-f)

Each Inverter IGBT — — 0.21 °C/Watt

Each Inverter FWDi — — 0.35 °C/Watt
Case to Fin Per Module, — — 0.025 °C/Watt
Thermal Grease Applied

Recommended Conditions for Use

Characteristic Symbol Condition Value Units
Supply Voltage V

Input ON Voltage V
Input OFF Voltage V
Arm Shoot-Through Blocking Time t

*With ripple satisfying the following conditions, dv/dt swing ≤ 5V/µs, Variation ≤ 2V peak to peak.

CC

V

CE(surge)

V

D

CIN(on)
CIN(off)UP-VUPC

dead

Applied across P-N Terminals ≤ 800 Volts
Applied across P-N Terminals ≤ 1000 Volts

Applied between V

V

VP1-VVPC

, V

UP1-VUPC

WP1-VWPC *

, 15 ± 1.5 Volts

, VN1-V

NC

Applied between ≤ 0.8 Volts

, VP-V

VPC

, WP-V

, UN · VN · WN-V

WPC

NC

≥ 4.0 Volts

For IPM's each Input Signal ≥ 3.0 µs

Sep.1998

MITSUBISHI INTELLIGENT POWER MODULES

PM100CVA120

FLAT-BASE TYPE

INSULATED PACKAGE

SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

3.0

, (VOLTS)

CE(SAT)

2.0

1.0

0

COLLECTOR-EMITTER VOLTAGE, V

0 50 100 150

COLLECTOR CURRENT, IC, (AMPERES)

SWITCHING TIME VS.

COLLECTOR CURRENT (TYPICAL)

1

10

, (µs)

off

, t

on

0

10

SWITCHING TIMES, t

-1

10

1

10

COLLECTOR CURRENT, IC, (AMPERES)

t

off

t

on

2

10

VD = 15V
V

CIN

VCC = 600V
V

= 15V

D

Inductive Load

= 0V

Tj = 25°C

= 125°C

T

j

Tj = 25°C

= 125°C

T

j

SATURATON VOLTAGE CHARACTERISTICS

3.0

2.0

, (VOLTS)

CE(SAT)

V

1.0

COLLECTOR-EMITTER SATURATION VOLTAGE,

0

1

10

, (µs)

c(off)

, t

c(on)

0

10

SWITCHING TIMES, t

-1

10

3

10

10

COLLECTOR-EMITTER

(TYPICAL)

, (AMPERES)

IC = 100A
V

= 0V

CIN

Tj = 25°C

= 125°C

T

j

0 131517

CONTROL SUPPLY VOLTAGE, VD, (VOLTS)

SWITCHING TIME VS.

COLLECTOR CURRENT (TYPICAL)

VCC = 600V
V

= 15V

D

Inductive Load

T

= 25°C

j

T

= 125°C

j

t

c(off)

t

c(on)

1

COLLECTOR CURRENT, IC, (AMPERES)

2

10

10

COLLECTOR CURRENT, I

, (mJ/PULSE)

, P

SWITCHING ENERGY, P

3

OUTPUT CHARACTERISTICS

(TYPICAL)

C

150

100

Tj = 25
V

CIN

o

= 0V

C

15

VD = 17V

13

50

0

0 102030

COLLECTOR-EMITTER VOLTAGE, V

SWITCHING LOSS

CHARACTERISTICS (TYPICAL)

3

10

VCC = 600V

= 15V

V

D

Inductive Load

Tj = 25°C

= 125°C

T

10

SW(off)

SW(on)

10

10

2

1

0

j

1

10

COLLECTOR CURRENT, IC, (AMPERES)

2

10

P

SW(off)

P

SW(on)

P

SW(on)

P

SW(off)

CE(sat)

, (VOLTS)

3

10

REVERSE RECOVERY CURRENT VS.

COLLECTOR CURRENT (TYPICAL)

1

10

, (µs)

rr

0

10

I

rr

t

rr

-1

10

REVERSE RECOVERY TIME, t

-2

10

1

10

COLLECTOR CURRENT, IC, (AMPERES)

2

10

VCC = 600V
V

= 15V

D

Inductive Load

Tj = 25°C

= 125°C

T

j

3

10

2

10

1

10

0

10

3

10

2

10

, (AMPERES)

rr

, (AMPERES)

E

1

10

EMITTER CURRENT, I

REVERSE RECOVERY CURRENT, I

0

10

0 1.0 2.0 3.0

DIODE FORWARD CHARACTERISTICS

VD = 15V
V

= 15V

CIN

Tj = 25°C

= 125°C

T

j

EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)

CIRCUIT CURRENT VS.
CARRIER FREQUENCY

150

VD = 15V
T

= 25°C

j

, (mA)

100

D

N-SIDE

50

CIRCUIT CURRENT, I

0

0 102030

CARRIER FREQUENCY, fC, (kHz)

P-SIDE

Sep.1998

MITSUBISHI INTELLIGENT POWER MODULES

PM100CVA120

FLAT-BASE TYPE

INSULATED PACKAGE

OVER CURRENT TRIP LEVEL VS.

SUPPLY VOLTAGE (TYPICAL)

1.2

Tj = 25°C

= 15V) = 1.0

D

1.0

0.8

0

SHORT CIRCUIT CURRENT TRIP LEVEL, (V

0 131517

CONTROL SUPPLY VOLTAGE, VD, (VOLTS)

CONTROL SUPPLY VOLTAGE TRIP-RESET

LEVEL TEMPERATURE DEPENDENCY

15

VD = 15V

, (VOLTS)

r

13

, UV

t

UV
UV

(TYPICAL)

t
r

11

TRIP RESET LEVEL, UV

SUPPLY CIRCUIT UNDER VOLTAGE PROTECTION

0

-60

20 100 180

JUNCTION TEMPERATURE, Tj, (°C)

OVER CURRENT TRIP LEVEL

TEMPERATURE DEPENDENCY (TYPICAL)

1.2

= 25°C) = 1.0

j

1.0

0.8

0

SHORT CIRCUIT CURRENT TRIP LEVEL, (T

1

10

0

10

(NORMALIZED VALUE)

,

-1

th(j-c)

10

-2

10

SINGLE PULSE
STANDARD VALUE = R

-3

10

TRANSIENT IMPEDANCE, Z

-3

10

20-60 100 180

JUNCTION TEMPERATURE, Tj, (°C)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

-2

10

(Each IGBT)

-1

10

TIME, (s)

th(j-c)Q

VD = 15V

= 0.21°C/W

0

10

10

FAULT OUTPUT PULSE WIDTH VS.

TEMPERATURE (TYPICAL)

1.2

1.0

= 25°C) = 1.0

j

(T

FO

0.8

t

FAULT OUTPUT PULSE WIDTH TRIP LEVEL,

0

JUNCTION TEMPERATURE, Tj, (°C)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

1

10

0

10

(NORMALIZED VALUE)

,

-1

th(j-c)

10

-2

10

SINGLE PULSE
STANDARD VALUE = R

-3

10

TRANSIENT IMPEDANCE, Z

1

-3

10

10

VD = 15V

20-60 100 180

(Each FWDi)

= 0.35°C/W

th(j-c)D

-2

-1

10

TIME, (s)

0

10

10

1

Sep.1998