Mitsubishi ML120G14, ML101J14 Datasheet

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MITSUBISHI LASER DIODES

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ML1XX14 SERIES

Under Development

FOR OPTICAL INFORMATION SYSTEMS

Preliminary

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AME

This Model is under development. Therefore, please note that this data sheet may be
changed without any notice.

DESCRIPTION

ML1XX14 is a high power AlGaInP semiconductor laser which
provides a stable, single transverse mode oscillation with
emission wavelength of 660 nm and standard PULSE light
output of 70mW.

ML1XX14 has a window-mirror-facet which improves the
maximum output power. That leads to highly reliable and high­power operation.

ML101J14, ML120G14

FEATURES

•

High Output Power: 50mW (CW) , 70mW (Pulse)

• Visible Light: 660nm (typ.)

APPLICATION

High-Density Optical Disc Drives

Rewritable DVD(Digital Versatile Disc) Drives

BSOLUTE MAXIMUM RATINGS

Symbol Parameter Conditions Ratings Unit

Po Light output power

VRL Reverse voltage 2 V

Tc Case temperature

Tstg Storage temperature -

Note1: The maximum rating means the limitation over which the laser should not be operated even instant time,
and this does not mean the guarantee of its lifetime. As for the reliability,please refer to the reliability report from Mitsubishi
Semiconductor Quality Assurance Section.

Note2: TARGET SPEC /Condition Duty less than 50%,pulse width less than 0.1µs

Note 1)

CW 60

Pulse(Note 2) 70

-

-

-10

-40

~ +100

~ +60

mW

°C
°C

LECTRICAL/OPTICAL CHARACTERISTICS (Tc=25°C)

Symbol Parameter Test conditions

Ith

Iop

Vop

η

λp

θ//

θ⊥

Threshold current CW -

Operating current

Operating voltage CW, Po=50mW

Slope efficiency CW, Po=50mW -0.67-mW/mA

Peak wavelength CW, Po=50mW 660 nm

Beam divergence angle

(parallel)

Beam divergence angle

(perpendicular)

CW, Po=50mW - 132 mA

CW, Po=50mW 8.5

CW, Po=50mW

in.

-

655

--

--

yp. Max Unit

57

2.5

22

-

-

3.0

666

mA

V

°

°

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ITSUBISHI

LECTRIC

as of December '99

LDC

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OUTLINE DRAWINGS

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ITSUBISHI LASER DIODES

ML1XX14 SERIES

OR OPTICAL INFORMATION SYSTEMS

ML101J14

ML120G14

here is no model with a monitor photo diode in ML1XX14 series.

(1)

(2)

(1)

(2)

(3)

ASE

LD

ML101J14

3)
ASE

ML120G14

( 2 / 5 )

ITSUBISHI

LECTRIC

as of December '99

Typical Characteristics

70

60

MITSUBISHI LASER DIODES

ML1XX14 SERIES

FOR OPTICAL INFORMATION SYSTEMS

Tc=25 40 50 60 70°C

50

40

30

20

Reference Data

Duty Cycle: 50 %

10

Pulse Width: 0.1 µsec

Light Output Power, Po (mW)

0

0 50 100 150 200 250 300

Operating Current, Iop (mA)

Light Output Power vs. Current (Pulse)

70

Tc=25 40 50 60 70°C

60
50

40

Reference Data

30
20
10

Light Output Power, Po (mW)

0

0 50 100 150 200 250 300

Operating Current, Iop (mA)

Light Output Power vs. Current (CW)

MITSUBISHI
ELECTRIC

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as of December '99

Typical Characteristics

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0.5

Intensity

0

-60 -40 -20 0 20 40 60

ITSUBISHI LASER DIODES

ML1XX14 SERIES

FOR OPTICAL INFORMATION SYSTEMS

Po: 50 mW, CW

Tc: 25 °C

Threshold Current, Ith (mA)

100

50

Angle ( ° )

Far Field Patterns

CW

10

0 10203040506070

Case Temperature, Tc (°C)

Threshold Current vs Temperature

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ELECTRIC

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as of December '99

Typical Characteristics

670

665

MITSUBISHI LASER DIODES

ML1XX14 SERIES

FOR OPTICAL INFORMATION SYSTEMS

Po: 50 mW, CW

660

∆λp/∆Tc=0.18 (nm/°C)

Peak Wavelength, λp(nm)

655

0 10203040506070

Case Temperature, Tc (°C)

Temperature dependence of Peak Wavelength

661

Tc: 25 °C, CW

660

659

658

∆λp/∆Po=0.05 (nm/mW)

657

Peak Wavelength, λp(nm)

656

01020304050

Light Output Power, Po (mW)

Light Output Power dependence of Peak Wavelength

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as of December '99