MITSUBISHI MGFX39V0717 User Manual

< X/Ku band internally matched power GaAs FET >

MGFX39V0717

10.7 – 11.7 GHz BAND / 8W

DESCRIPTION

The MGFX39V0717 is an internally impedance-matched
GaAs power FET especially designed for use in 10.7 – 11.7
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.

FEATURES

Internally impedance matched
 High output power
P1dB=8.0W (TYP.) @f=10.7 – 11.7GHz
 High linear power gain
GLP=7.0dB (TYP.) @f=10.7 – 11.7GHz
 High power added efficiency
P.A.E.=26% (TYP.) @f=10.7 – 11.7GHz

APPLICATION

 For use in 10.7 – 11.7 GHz band power amplifiers

QUALITY

 IG

RECOMMENDED BIAS CONDITIONS

 VDS=10V  ID=2.4A Refer to Bias Procedure

Absolute maximum ratings (Ta=25C)

Symbol Parameter Ratings Unit

VGDO
VGSO Gate to source breakdown voltage -15 V
ID Drain current 5.6 A
IGR Reverse gate current -18 mA
IGF Forward gate current 36 mA
PT *1 Total power dissipation 42.8 W
Tch Cannel temperature 175 C
Tstg Storage temperature -65 to +175 C

*1 : Tc=25C

Gate to drain

breakdown voltage -15 V

Electrical characteristics

(Ta=25C)

Symbol Parameter Test conditions Limits Unit

IDSS
gm

VGS(off)
P1dB
GLP Linear Power Gain 6 7 - dB

P.A.E. Power added efficiency - 26 - %

Rth(ch-c) *2

*2 :Channel-case

Saturated drain current VDS=3V,VGS=0V - 4
Transconductance VDS=3V,ID=2.2A - 2
Gate to source cut-off voltage VDS=3V,ID=20mA -2 -3 -4 V

Output power at 1dB gain compression

Thermal resistance

VDS=10V,ID(RF off)=2.4A
f=10.7 – 11.7GHz

Keep Safety first in your circuit designs!

Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.

Min. Typ. Max.

5.6 A

- S

37.5 39 - dBm

- - 3.5 C/W

Publication Date : Apr., 2011

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< X/Ku band internally matched power GaAs FET >

MGFX39V0717

10.7 -11.7 GHz BAND / 8W

MGFX39V0717 TYPICAL CHARACTERISTICS( Ta=25deg.C )

P1dB,GLP vs. f Po,PAE vs. Pin

S11,S22 vs. f S21,S12 vs. f

MGFX39V0717 S-parameters

f

(GHz)

10.7 0.64 40 2.15 23 0.082 2 0.44 41

10.9 0.50 15 2.28 -4 0.085 -14 0.34 14

11.1 0.34 -15 2.38 -25 0.087 -34 0.24 -17

11.3 0.16 -71 2.45 -52 0.093 -57 0.14 -73

11.5 0.20 -168 2.30 -73 0.092 -79 0.16 -136

11.7 0.32 151 2.15 -93 0.087 -98 0.18 176

Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.)

S11 S21 S12 S22

( Ta=25deg.C , VDS=10(V),IDS=2.4(A) )

S Parameters(Typ.)

Publication Date : Apr., 2011

2