MITSUBISHI MGFS52BN2122A User Manual

< L/S band internally matched power GaAs FET >

MGFS52BN2122A

2.1 – 2.2 GHz BAND / 160W

DESCRIPTION

The MGFS52BN2122A is a 160W push-pull type GaAs power FET
especially designed for use in 2.1 – 2.2GHz band amplifiers.
The hermetically sealed metal-ceramic package guarantees
high reliability.

FEATURES

Push-pull configuration
 High output power
Pout=160W (TYP.) @f=2.17GHz
 High power gain
GLP=12.0dB (TYP.) @f=2.17GHz
 High power added efficiency
P.A.E.=48% (TYP.) @f=2.17GHz

APPLICATION

 2.1-2.2GHz band power amplifier for W-CDMA Base Station

QUALITY

 IG

RECOMMENDED BIAS CONDITIONS

 VDS=12V  ID=4.0A  RG=5ohm for each gate

Absolute maximum ratings (Ta=25C)

Symbol Parameter Ratings Unit

VGDO
VGSO Gate to source breakdown voltage -10 V
PT *1 Total power dissipation 187.5 W
Tch Cannel temperature 175 C
Tstg Storage temperature -65 to +175 C

*1 : Tc=25C

Electrical characteristics

Symbol Parameter Test conditions Limits Unit

GLP Linear Power Gain VDS=12V,ID(RF off)=4.0A,f=2.17GHz

Pout Output Power 50.8 51.8 - dBm

ID Drain current - 23 30 A
P.A.E. Power added efficiency

Rth(ch-c) *2

*2 :Channel-case

Gate to drain

Thermal resistance delta Vf method - 0.55 0.8

breakdown voltage -20 V

(Ta=25C)

Pin=32dBm
VDS=12V,ID(RF off)=4.0A,f=2.17GHz
Pin=43dBm

OUTLINE

Keep Safety first in your circuit designs!

Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.

Min. Typ. Max.

11 12 - dB

- 48 - %
C/W



Publication Date : Apr., 2011

1

< L/S band internally matched power GaAs FET >

MGFS52BN2122A

2.1 – 2.2 GHz BAND / 160W

MGFS52BN2122A TYPICAL CHARACTERISTICS

Pout , Id , PAE , GAIN , ΔGAIN , ΔPHASE vs. Pin (CW 1-tone)

f=2.11GHz f=2.14GHz f=2.17GHz

Test Condition : Vds=12V,Idq=4A,Ta=25deg.C

Publication Date : Apr., 2011

2

< L/S band internally matched power GaAs FET >

MGFS52BN2122A

2.1 – 2.2 GHz BAND / 160W

f=2.11GHz f=2.14GHz f=2.17GHz

Pout , Id , PAE , GAIN , ΔGAIN , ΔPHASE vs. Pin (CW 1-tone)

Test Condition : Vds=12V,Idq=2A,Ta=25deg.C

Publication Date : Apr., 2011

3