< L/S band internally matched power GaAs FET >
MGFS52BN2122A
2.1 – 2.2 GHz BAND / 160W
DESCRIPTION
The MGFS52BN2122A is a 160W push-pull type GaAs power FET
especially designed for use in 2.1 – 2.2GHz band amplifiers.
The hermetically sealed metal-ceramic package guarantees
high reliability.
FEATURES
Push-pull configuration
High output power
Pout=160W (TYP.) @f=2.17GHz
High power gain
GLP=12.0dB (TYP.) @f=2.17GHz
High power added efficiency
P.A.E.=48% (TYP.) @f=2.17GHz
APPLICATION
2.1-2.2GHz band power amplifier for W-CDMA Base Station
QUALITY
IG
RECOMMENDED BIAS CONDITIONS
VDS=12V ID=4.0A RG=5ohm for each gate
Absolute maximum ratings (Ta=25C)
Symbol Parameter Ratings Unit
VGDO
VGSO Gate to source breakdown voltage -10 V
PT *1 Total power dissipation 187.5 W
Tch Cannel temperature 175 C
Tstg Storage temperature -65 to +175 C
*1 : Tc=25C
Electrical characteristics
Symbol Parameter Test conditions Limits Unit
GLP Linear Power Gain VDS=12V,ID(RF off)=4.0A,f=2.17GHz
Pout Output Power 50.8 51.8 - dBm
ID Drain current - 23 30 A
P.A.E. Power added efficiency
Rth(ch-c) *2
*2 :Channel-case
Gate to drain
Thermal resistance delta Vf method - 0.55 0.8
breakdown voltage -20 V
(Ta=25C)
Pin=32dBm
VDS=12V,ID(RF off)=4.0A,f=2.17GHz
Pin=43dBm
OUTLINE
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
Min. Typ. Max.
11 12 - dB
- 48 - %
C/W
Publication Date : Apr., 2011
1
< L/S band internally matched power GaAs FET >
MGFS52BN2122A
2.1 – 2.2 GHz BAND / 160W
MGFS52BN2122A TYPICAL CHARACTERISTICS
Pout , Id , PAE , GAIN , ΔGAIN , ΔPHASE vs. Pin (CW 1-tone)
f=2.11GHz f=2.14GHz f=2.17GHz
Test Condition : Vds=12V,Idq=4A,Ta=25deg.C
Publication Date : Apr., 2011
2
< L/S band internally matched power GaAs FET >
MGFS52BN2122A
2.1 – 2.2 GHz BAND / 160W
f=2.11GHz f=2.14GHz f=2.17GHz
Pout , Id , PAE , GAIN , ΔGAIN , ΔPHASE vs. Pin (CW 1-tone)
Test Condition : Vds=12V,Idq=2A,Ta=25deg.C
Publication Date : Apr., 2011
3
< L/S band internally matched power GaAs FET >
MGFS52BN2122A
2.1 – 2.2 GHz BAND / 160W
f=2.11GHz f=2.14GHz f=2.17GHz
IM3 , IM5 , Id , PAE , GAIN vs. Pout
(W-CDMA signal , 2-tone 3GPP test model 1 w/64DPCH)
Test Condition : Vds=12V,Idq=4A,Ta=25deg.C
Publication Date : Apr., 2011
4
< L/S band internally matched power GaAs FET >
MGFS52BN2122A
2.1 – 2.2 GHz BAND / 160W
IM3 , IM5 , Id , PAE , GAIN vs. Pout
(W-CDMA signal , 2-tone 3GPP test model 1 w/64DPCH)
f=2.11GHz f=2.14GHz f=2.17GHz
Test Condition : Vds=12V,Idq=2A,Ta=25deg.C
Publication Date : Apr., 2011
5
< L/S band internally matched power GaAs FET >
MGFS52BN2122A
2.1 – 2.2 GHz BAND / 160W
MGFS52BN2122A RF TEST FIXTURE
Publication Date : Apr., 2011
6
< L/S band internally matched power GaAs FET >
MGFS52BN2122A
2.1 – 2.2 GHz BAND / 160W
MGFS52BN2122A S-parameters( Ta=25deg.C , VDS=12(V),IDS=2.0(A) for one side FET )
Publication Date : Apr., 2011
7
< L/S band internally matched power GaAs FET >
MGFS52BN2122A
2.1 – 2.2 GHz BAND / 160W
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor product s better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors
may lead to personal injury, fire or property damage. Remember to give due consideration to safety when
making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
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© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Publication Date : Apr., 2011
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